III-IV Quantum Dot Lasers Epitaxially Grown on Si

Siming Chen,Mingchu Tang,Jiang Wu,Mengya Liao,Alwyn Seeds,Huiyun Liu

DOI: https://doi.org/10.1109/cleopr.2017.8119104

2017-01-01

Abstract:We review our recent developments, through several approaches, in the direct epitaxial growth of III-V quantum dot lasers on silicon substrates.

What problem does this paper attempt to address?

Tunable Quantum Dot Lasers Grown Directly on Silicon

Yating Wan,Sen Zhang,Justin C. Norman,M. J. Kennedy,William He,Songtao Liu,Chao Xiang,Chen Shang,Jian-Jun He,Arthur C. Gossard,John E. Bowers

DOI: https://doi.org/10.1364/optica.6.001394

IF: 10.4

2019-01-01

Optica

Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.
Progressing in III-V Semiconductor Quantum Dot Lasers Grown Directly on Silicon: A Review

Rehab Joko Hussin,Ivan B. Karomi

DOI: https://doi.org/10.1007/s12633-024-03098-2

IF: 3.4

2024-07-26

Silicon

Abstract:Enormous advantages can be brought by using silicon as a substrate for III-V photonic integrated circuit quantum dot (QD) lasers, such as a low cost, high bandwidth transmission data, on-chip light sources, etc. However, several difficulties arise when III-V QD lasers are grown directly on Si-substrate, mainly due to high lattice mismatching between the III-V components and the silicon wafer. In fact, a highly thermal expansion coefficient difference, threading dislocation densities (TDDs), and antiphase boundaries (APBs) are the crucial obstacles for developing a high-performance semiconductor laser on Si. In this regard, many approaches and strategies have been devoted to tolerantly grow III-V on Si. In this review, the history of QD laser diodes directly grown on Si-substrate is demonstrated. The benefits and the problems of III-V semiconductor materials epitaxially grown on Si are discussed. The recent progress in QD lasers grown in silicon is reviewed, focusing on InAs-QD lasers in terms of threshold current density, output optical power, emission wavelengths, and operation temperatures. The future of QD lasers monolithically grown on Si-substrate and their application are also discussed in this review.

materials science, multidisciplinary,chemistry, physical
Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

Mengya Liao,Siming Chen,Suguo Huo,Si Chen,Jiang Wu,Mingchu Tang,Ken Kennedy,Wei Li,Saurabh Kumar,Mickael Martin,Thierry Baron,Chaoyuan Jin,Ian Ross,Alwyn Seeds,Huiyun Liu

DOI: https://doi.org/10.1109/jstqe.2017.2693025

IF: 4.9

2017-01-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:In this paper, we report monolithically integrated III-V quantum dot (QD) light-emitting sources on silicon substrates for silicon photonics. We describe the first practical InAs/GaAs QD lasers monolithically grown on an offcut silicon (001) substrate due to the realization of high quality III-V epilayers on silicon with low defect density, indicating that the large material dissimilarity between III-Vs and silicon is no longer a fundamental barrier limiting monolithic growth of III-V lasers on Si substrates. Although the use of offcut silicon substrates overcomes the antiphase boundary (APB) problem, it has the disadvantage of not being readily compatible with standard microelectronics fabrication, where wafers with on-axis silicon (001) substrates are used. We therefore report, to the best of our knowledge, the first electrically pumped continuous-wave (c.w.) InAs/GaAs QD lasers fabricated on on-axis GaAs/Si (001) substrates without any intermediate buffer layers. Based on the achievements described above, we move on to report the first study of post-fabrication and prototyping of various Si-based light emitting sources by utilizing the focused ion beam (FIB) technique, with the intention of expediting the progress toward large-scale and low-cost photonic integrated circuits monolithically integrated on a silicon platform. We compare two Si-based QD lasers with as-cleaved and FIB-made facets, and prove that FIB is a powerful tool to fabricate integrated lasers on silicon substrates. Using angled facet structures, which effectively reduce facet reflectivity, we demonstrate Si-based InAs/GaAs QD superluminescent light emitting diodes (SLDs) operating under c.w. conditions at room temperature for the first time. The work described represents significant advances towards the realization of a comprehensive silicon photonics technology.
III-nitride semiconductor lasers grown on Si

Meixin Feng,Jianxun Liu,Qian Sun,Hui Yang

DOI: https://doi.org/10.1016/j.pquantelec.2021.100323

IF: 10.333

2021-05-01

Progress in Quantum Electronics

Abstract:<p>III-nitride semiconductor laser directly grown on Si is a potential on-chip light source for Si photonics. Moreover, it may greatly lower the manufacture cost of laser diodes and further expand their applications. Therefore, III-nitride lasers grown on Si have been pursued for about two decades. Different from GaN homoepitaxy on free-standing GaN substrates, III-nitride semiconductors grown on Si substrates are usually rich with strain and threading dislocations due to the large mismatch in both lattice constant and coefficient of thermal expansion between GaN and Si substrates, which hindered the realization of electrically injected lasing. The key challenges in the direct growth of high-quality III-nitride semiconductor laser materials on Si substrates, as well as their corresponding solutions, are discussed in detail. Afterwards, a comprehensive review is presented on the recent progress of III-nitride semiconductor lasers grown on Si, including Fabry-Pérot cavity lasers, microdisk lasers, and the lasers with nanostructures, as well as the monolithic integration of lasers on Si. Finally, the further development of III-nitride semiconductor lasers grown on Si is also discussed, including the material quality improvement and novel device structures for enhancing optical confinement and reducing electrical resistance, with a great prospect for better performance and reliability.</p>

optics,physics, applied,quantum science & technology,engineering, electrical & electronic
Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Dawei Di,Ivan Perez-Wurfl,Gavin Conibeer,Martin A. Green

DOI: https://doi.org/10.1117/12.859715

2010-01-01

Abstract:Si quantum dots in SiO(2)/Si(3)N(4) hybrid matrix on quartz substrates were fabricated by magnetron sputtering of alternating silicon rich oxide and Si(3)N(4) layers followed by different post-deposition anneals. X-ray diffraction results indicate that the average dimension of the Si QDs ranges from 1.6 to 5.2 nm. The size and crystallisation of the Si nanocrystals are dependent on a number of factors, including the annealing condition, the SRO thickness and the Si(3)N(4) barrier thickness, as evidenced in XRD and Raman measurements. In particular, thicker Si(3)N(4) barrier layers seem to be able to suppress the growth of Si nanocrystals more effectively. PL measurements indicate that the apparent bandgap of the samples investigated in this work is in the range 1.12-1.67 eV, which demonstrates the effect of quantum confinement. More interestingly, analysis of the PL data reveals that the PL peak energy does not only depend on the size of the nanocrystals, but also affected by other details of the nanocrystal formation. A simple core-shell model is constructed to illustrate our explanation. These findings offer a preliminary understanding of the nanocrystal growth and radiative recombination processes in this newly synthesized material.
Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers

Chen Shang,Kaiyin Feng,Eamonn T. Hughes,Andrew Clark,Mukul Debnath,Rosalyn Koscica,Gerald Leake,Joshua Herman,David Harame,Peter Ludewig,Yating Wan,John E. Bowers

DOI: https://doi.org/10.48550/arXiv.2206.01211

2022-06-03

Abstract:Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources. Recent developments have demonstrated superior device reliability in blanket hetero-epitaxy of III-V devices on Si at elevated temperatures. Yet, thick, defect management epi designs prevent vertical light coupling from the gain region to the Si-on-Insulator (SOI) waveguides. Here, we demonstrate the first electrically pumped QD lasers grown on a 300 mm patterned (001) Si wafer with a butt-coupled configuration by molecular beam epitaxy (MBE). Unique growth and fabrication challenges imposed by the template architecture have been resolved, contributing to continuous wave lasing to 60 °C and a maximum double-side output power of 126.6 mW at 20 °C with a double-side wall plug efficiency of 8.6%. The potential for robust on-chip laser operation and efficient low-loss light coupling to Si photonic circuits makes this heteroepitaxial integration platform on Si promising for scalable and low-cost mass production.

Optics,Emerging Technologies
Recent progress in epitaxial growth of dislocation tolerant and dislocation free III–V lasers on silicon

Zhao Yan,Qiang Li

DOI: https://doi.org/10.1088/1361-6463/ad26cd

2024-03-02

Journal of Physics D Applied Physics

Abstract:Epitaxial integration of III–V optical functionalities on silicon (Si) is the key to complement current Si photonics, facilitating the development of scalable, compact photonic integrated circuits. Here we aim to outline this field, focusing on the III–V semiconductor materials and the III–V lasers grown on Si. This paper is divided into two main parts: in the first part, we discuss III–V materials grown on Si, including the low-index {hhl} facets, (001) Si surface and anti-phase boundary, and dislocation engineering. The second part centres at III–V lasers grown on Si: we will first discuss III–V lasers that are highly tolerant to dislocations, including quantum dot/dash diode lasers, interband cascade, and quantum cascade lasers grown on Si from near infrared to long-wave infrared. We then move to the selective heteroepitaxy of low dislocation density III–Vs for the bufferless lasers. Finally, we review the III–V nanowire photonic crystal lasers grown on Si, which offers a different approach to overcome material mismatch and grow dislocation free III–V structures on silicon. We start with briefly introducing the recent progress of each technology, followed with a discussion of its key advantages, research challenge and opportunities.

physics, applied
Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

Taojie Zhou,Mingchu Tang,Guohong Xiang,Boyuan Xiang,Suikong Hark,Mickael Martin,Thierry Baron,Shujie Pan,Jae-Seong Park,Zizhuo Liu,Siming Chen,Zhaoyu Zhang,Huiyun Liu

DOI: https://doi.org/10.1038/s41467-020-14736-9

IF: 16.6

2020-02-20

Nature Communications

Abstract:Abstract Semiconductor III–V photonic crystal (PC) laser is regarded as a promising ultra-compact light source with unique advantages of ultralow energy consumption and small footprint for the next generation of Si-based on-chip optical interconnects. However, the significant material dissimilarities between III-V materials and Si are the fundamental roadblock for conventional monolithic III-V-on-silicon integration technology. Here, we demonstrate ultrasmall III-V PC membrane lasers monolithically grown on CMOS-compatible on-axis Si (001) substrates by using III-V quantum dots. The optically pumped InAs/GaAs quantum-dot PC lasers exhibit single-mode operation with an ultra-low threshold of ~0.6 μW and a large spontaneous emission coupling efficiency up to 18% under continuous-wave condition at room temperature. This work establishes a new route to form the basis of future monolithic light sources for high-density optical interconnects in future large-scale silicon electronic and photonic integrated circuits.

multidisciplinary sciences
High Speed Evanescent Quantum‐Dot Lasers on Si

Yating Wan,Chao Xiang,Joel Guo,Rosalyn Koscica,Mj Kennedy,Jennifer Selvidge,Zeyu Zhang,Lin Chang,Weiqiang Xie,Duanni Huang,Arthur C. Gossard,John E. Bowers

DOI: https://doi.org/10.1002/lpor.202100057

2021-01-01

LASER & PHOTONICS REVIEWS

Abstract:Significant improvements in III-V/Si epitaxy have pushed quantum dots (QDs) to the forefront of Si photonics. For efficient, scalable, and multifunctional integrated systems to be developed, a commercially viable solution must be found to allow efficient coupling of the QD laser output to Si waveguides. In this work, the design, fabrication, and characterization of such a platform are detailed. Record-setting evanescent QD distributed feedback lasers on Si with a 3 dB modulation bandwidth of 13 GHz, a threshold current of 4 mA, a side-mode-suppression-ratio of 60 dB, and a fundamental linewidth of 26 kHz, are reported. The maximum temperature during the backend III/V process is only 200 degrees C, which is fully compatible with CMOS process thermal budgets. The whole process is substrate agnostic and hence can leverage previous development in QD lasers grown on Si and benefit from the economy of scale. The broadband and versatile nature of the QD lasers and the Si-on-insulator low-loss waveguiding platform can be expanded to build fully functional photonic integrated circuits throughout the O band.
E-Band InAs Quantum Dot Micro-Disk Laser with Metamorphic InGaAs Layers Grown on GaAs/Si (001) Substrate

Wenqian Liang,Wenqi Wei,Dong Han,Ming Ming,Jieyin Zhang,Zihao Wang,Xinding Zhang,Ting Wang,Jianjun Zhang

DOI: https://doi.org/10.3390/ma17081916

IF: 3.4

2024-04-22

Materials

Abstract:The direct growth of III-V quantum dot (QD) lasers on silicon substrate has been rapidly developing over the past decade and has been recognized as a promising method for achieving on-chip light sources in photonic integrated circuits (PICs). Up to date, O- and C/L-bands InAs QD lasers on Si have been extensively investigated, but as an extended telecommunication wavelength, the E-band QD lasers directly grown on Si substrates are not available yet. Here, we demonstrate the first E-band (1365 nm) InAs QD micro-disk lasers epitaxially grown on Si (001) substrates by using a III-V/IV hybrid dual-chamber molecular beam epitaxy (MBE) system. The micro-disk laser device on Si was characterized with an optical threshold power of 0.424 mW and quality factor (Q) of 1727.2 at 200 K. The results presented here indicate a path to on-chip silicon photonic telecom-transmitters.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Monolithic integration of embedded III-V lasers on SOI

Wen-Qi Wei,An He,Bo Yang,Zi-Hao Wang,Jing-Zhi Huang,Dong Han,Ming Ming,Xuhan Guo,Yikai Su,Jian-Jun Zhang,Ting Wang

DOI: https://doi.org/10.1038/s41377-023-01128-z

2023-04-04

Light: Science and Applications

Abstract:Silicon photonic integration has gained great success in many application fields owing to the excellent optical device properties and complementary metal-oxide semiconductor (CMOS) compatibility. Realizing monolithic integration of III-V lasers and silicon photonic components on single silicon wafer is recognized as a long-standing obstacle for ultra-dense photonic integration, which can provide considerable economical, energy-efficient and foundry-scalable on-chip light sources, that has not been reported yet. Here, we demonstrate embedded InAs/GaAs quantum dot (QD) lasers directly grown on trenched silicon-on-insulator (SOI) substrate, enabling monolithic integration with butt-coupled silicon waveguides. By utilizing the patterned grating structures inside pre-defined SOI trenches and unique epitaxial method via hybrid molecular beam epitaxy (MBE), high-performance embedded InAs QD lasers with monolithically out-coupled silicon waveguide are achieved on such template. By resolving the epitaxy and fabrication challenges in such monolithic integrated architecture, embedded III-V lasers on SOI with continuous-wave lasing up to 85 °C are obtained. The maximum output power of 6.8 mW can be measured from the end tip of the butt-coupled silicon waveguides, with estimated coupling efficiency of approximately -6.7 dB. The results presented here provide a scalable and low-cost epitaxial method for the realization of on-chip light sources directly coupling to the silicon photonic components for future high-density photonic integration.

optics
Iv-Vi Semiconductor Growth on Silicon Substrates and New Mid-Infrared Laser Fabrication Methods

PJ McCann,IN Chao,H Sachar,D McAlister,CP Li,XM Fang,HZ Wu,K Namjou

DOI: https://doi.org/10.1016/s1386-1425(99)00071-2

IF: 4.831

1999-01-01

Spectrochimica Acta Part A Molecular and Biomolecular Spectroscopy

Abstract:This paper reviews results from research conducted at the University of Oklahoma on the development of new IV-VI semiconductor (lead salt) epitaxial growth and laser fabrication procedures that can ultimately lead to dramatic increases in mid-IR laser operating temperatures. Work has focused on growth of IV-VI semiconductor laser structures on silicon substrates using buffer layers that contain BaF2. Recent experiments show that it is possible to obtain high crystalline quality IV-VI semiconductor layer structures on (111)-oriented silicon substrates using molecular beam epitaxy (MBE) or on (100)-oriented silicon using a combination of MBE and liquid phase epitaxy (LPE). Experimental data for IV-VI semiconductor layer structures grown on silicon substrates including crystalline quality information as determined by high resolution X-ray diffraction (HRXRD) measurements and absorption edge information as determined by Fourier transform infrared (FTIR) transmission measurements are presented. Results show that these materials can be used to fabricate lasers that cover the 3 microns (3333 cm-1) to 16 microns (625 cm-1) spectral range. Removal of IV-VI semiconductor laser structures from the silicon growth substrate by dissolving BaF2 buffer layers with water is also demonstrated. This allows epitaxially-grown laser structures to be sandwiched between two heat sinks with a minimum of thermally resistive IV-VI semiconductor material. Theoretical modeling predicts that IV-VI lasers fabricated this way will have maximum continuous wave (cw) operating temperatures at least 60 degrees higher than those of IV-VI lasers fabricated on PbSe or PbTe substrates.
Molecular Beam Epitaxial Growth of IV–VI Multiple Quantum Well Structures on Si(111) and BaF2(111) and Optical Studies of Epilayer Heating

HZ Wu,PJ McCann,O Alkhouli,XM Fang,D McAlister,K Namjou,N Dai,SJ Chung,PHO Rappl

DOI: https://doi.org/10.1116/1.1385915

2001-01-01

Abstract:IV–VI semiconductor multiple quantum well (MQW) structures (PbSe/PbSrSe) were grown on Si(111) and BaF2(111) substrates by molecular beam epitaxy. Structural and optical properties of the MQW structures have been studied using reflection high-energy electron diffraction, high resolution x-ray diffraction (HRXRD), Fourier-transform infrared (FTIR) transmission, and midinfrared photoluminescence (PL). Numerous satellite diffraction peaks and narrow linewidths of the HRXRD rocking curves indicate the high crystalline quality of the structures grown on both Si and BaF2. Longitudinal and oblique valley subband transitions without superposed interference fringes were observed in FTIR differential transmission spectra. Continuous wave midinfrared photoluminescence was also observed from both sets of samples. Comparison of FTIR and PL spectra allows determination of localized epilayer heating in the MQW samples due to optical pumping. For a typical laser pumping power of 9.1 W/cm2 the heating in a MQW layer on Si(111) was 70 °C, while the amount of heating for a MQW layer on lower thermal conductivity BaF2 was 83 °C.
High-quality single InGaAs/GaAs quantum dot growth on a CMOS-compatible silicon substrate for quantum photonic applications

Imad Limame,Peter Ludewig,Ching-Wen Shih,Marcel Hohn,Chirag C. Palekar,Wolfgang Stolz,Stephan Reitzenstein

2023-11-25

Abstract:We present the direct heteroepitaxial growth of high-quality InGaAs quantum dots on silicon, enabling scalable, cost-effective quantum photonics devices compatible with CMOS technology. GaAs heterostructures are grown on silicon via a GaP buffer and defect-reducing layers. These epitaxial quantum dots exhibit optical properties akin to those on traditional GaAs substrates, promising vast potential for the heteroepitaxy approach. They demonstrate strong multi-photon suppression with $g^{(2)}(\tau)=(3.7\pm 0.2) \times 10^{-2}$ and high photon indistinguishability $V=(66\pm 19)$% under non-resonance excitation. We achieve up to ($18\pm 1$)% photon extraction efficiency with a backside distributed Bragg mirror, marking a crucial step toward silicon-based quantum nanophotonics.

Mesoscale and Nanoscale Physics,Applied Physics
Epitaxial growth of quantum dots on van der Waals surfaces

Kaiyao Xin,Lian Li,Ziqi Zhou,Chen Zhang,Juehan Yang,Hui-Xiong Deng,Jinchuan Zhang,Junqi Liu,Kaihui Liu,Can Liu,Fengqi Liu,Zhongming Wei,Shenqiang Zhai

DOI: https://doi.org/10.1038/s44160-024-00562-0

2024-06-05

Nature Synthesis

Abstract:Zero-dimensional quantum dots (QDs), which have inherent quantum confinement effects and sharp discrete energy levels, are regarded as essential building blocks for quantum information devices. Current manufacturing strategies often exhibit limited adaptability in terms of compositional design or interface engineering. Here we propose a van der Waals (vdW) epitaxial strategy for growing intrinsic QDs by modulating the interfacial couplings between vdW surfaces and QDs. Versatile III–V (MX, M = Ga, In; X = As, Sb) and IV–VI (SnTe) QDs were fabricated without considering the lattice mismatch constraints, leading to QDs with more intrinsic features. We further demonstrated that the as-grown InSb QDs/MoS 2 showed a broadened photoresponse in the near-infrared region due to the efficient charge-transfer channels at their vdW interfaces. This work reports a synthetic route to the all-in-solid epitaxy of QDs, which may expand the optoelectronic applications of QDs beyond those that are conventionally grown.
Reliable InAs quantum dot lasers grown on patterned Si (001) substrate with embedded hollow structures assisted thermal stress relaxation

Qi Wen Wei,Huang Jingzhi,Ji Zitao,Dong Han,Yang Bo,Chen Jiajian,Qin Jiale,Cui Yiou,Zihao Wang,Ting Wang,Jianjun Zhang

DOI: https://doi.org/10.1088/1361-6463/ac8431

2022-07-27

Abstract:Direct epitaxial growth of III-V quantum dot (QD) lasers on Si (001) substrates is recognized as a promising and low-cost method for realizing high-performance on-chip light sources in silicon photonic integrated circuits (PICs). Recently, the CMOS-compatible patterned Si (001) substrates with sawtooth structures have been widely implemented to suppress the lattice mismatch induced defects and antiphase boundaries (APBs) for heteroepitaxial growth of high-quality III-V materials on Si. Considerable progresses have been made on high-performance 1300 nm InAs/GaAs QD lasers on Si (001). Here, we report a thermal stress-relaxed (111)-faceted silicon hollow structures by homoepitaxial method for reliable InAs/GaAs QD lasers growing on Si (001) substrates. Both simulation analysis and experimental results indicate that the voids buried below the sawtooth structures can release about 9% of the accumulative thermal stress of the III-V/Si system during the cooling process. Furthermore, electrically pumped InAs/GaAs QD narrow ridge lasers are grown and fabricated on the specially designed Si (001) platforms with a maximum operation temperature up to 90 °C under continuous-wave (CW) operation mode. Additionally, an extrapolated lifetime of over 5300 hours is calculated from the reliability test at 65 °C. These results lead toward high-yield, scalable, and reliable III-V lasers on Si (001) substrates for PICs.
Efficient single-photon emission from electrically driven InP quantum dots epitaxially grown on Si(001)

M. Wiesner,W.-M. Schulz,C. Kessler,M. Reischle,R. Rossbach,M. Jetter,P. Michler

DOI: https://doi.org/10.1088/0957-4484/23/33/335201

2011-04-12

Abstract:The heteroepitaxy of III-V semiconductors on silicon is a promising approach for making silicon a photonic platform for on-chip optical interconnects and quantum optical applications. Monolithic integration of both material systems is a long-time challenge, since different material properties lead to high defect densities in the epitaxial layers. In recent years, nanostructures however have shown to be suitable for successfully realising light emitters on silicon, taking advantage of their geometry. Facet edges and sidewalls can minimise or eliminate the formation of dislocations, and due to the reduced contact area, nanostructures are little affected by dislocation networks. Here we demonstrate the potential of indium phosphide quantum dots as efficient light emitters on CMOS-compatible silicon substrates, with luminescence characteristics comparable to mature devices realised on III-V substrates. For the first time, electrically driven single-photon emission on silicon is presented, meeting the wavelength range of silicon avalanche photo diodes' highest detection efficiency.

Mesoscale and Nanoscale Physics
Growth of A Periodic Inp-Based Heteroepitaxial Structure for A Quantum Cascade Laser

Y Guo,FQ Liu,JQ Liu,CM Li,ZG Wang

DOI: https://doi.org/10.1016/j.matlet.2005.04.023

IF: 3

2005-01-01

Materials Letters

Abstract:The route to grow InP-based heteroepitaxial structure for quantum cascade laser by molecular beam epitaxy is reported. Optimized growth conditions including substrate temperature, V/III ratio, growth rates, doping levels and interface control are summarized. Double crystal X-ray diffraction and cross-sectional transmission electron microscopy disclose that our grown InP-based heteroepitaxial structure for quantum cascade laser has excellent periodicity and sharp interfaces.
Selectively Grown III-V Lasers for Integrated Si-Photonics

Yu Han,Ying Xue,Zhao Yan,Kei May Lau

DOI: https://doi.org/10.1109/jlt.2020.3041348

IF: 4.7

2021-02-15

Journal of Lightwave Technology

Abstract:Epitaxially integrating III-V lasers with Si-photonics is the key for compact, efficient, and scalable photonic integrated circuits (PICs). Here we present an investigation of a path forward in integrating III-V functionalities on industry-standard silicon-on-insulator (SOI) platforms using selective area hetero-epitaxy. Based on our recently developed methods of selectively growing device quality InP on (001)-oriented SOI wafers, we demonstrated InP stripes and segments, with dimensions varying from a few hundred nanometers to a few micrometers. The flexible epitaxy of InP on SOI together with the unique bufferless trait will enable efficient light interfacing with Si-based photonic devices using either evanescent or butt coupling schemes. We simulated the possibility of employing the micrometer-scale InP on insulator to realize electrically driven lasers and found that the metal induced optical loss is negligible when the InP dimension exceeds 4.0m. The potential of utilizing this selective area growth method to realize fully integrated Si-photonics is illustrated.

engineering, electrical & electronic,optics,telecommunications
Telecom InGaAs/InP Quantum Well Lasers Laterally Grown on Silicon-on-Insulator

Jie Li,Ying Xue,Liying Lin,Zengshan Xing,Kam Sing Wong,Kei May Lau

DOI: https://doi.org/10.1109/jlt.2022.3181723

IF: 4.7

2022-08-05

Journal of Lightwave Technology

Abstract:Jie Li, Ying Xue, Liying Lin, Zengshan Xing, Kam Sing Wong, Kei May Lau To achieve on-chip lasers for Si-photonics, monolithic integration using selective epitaxy is a favorable option due to the unique defect ... [J. Lightwave Technol. 40, 5631-5635 (2022)]

engineering, electrical & electronic,optics,telecommunications

III-IV Quantum Dot Lasers Epitaxially Grown on Si

Tunable Quantum Dot Lasers Grown Directly on Silicon

Progressing in III-V Semiconductor Quantum Dot Lasers Grown Directly on Silicon: A Review

Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

III-nitride semiconductor lasers grown on Si

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers

Recent progress in epitaxial growth of dislocation tolerant and dislocation free III–V lasers on silicon

Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

High Speed Evanescent Quantum‐Dot Lasers on Si

E-Band InAs Quantum Dot Micro-Disk Laser with Metamorphic InGaAs Layers Grown on GaAs/Si (001) Substrate

Monolithic integration of embedded III-V lasers on SOI

Iv-Vi Semiconductor Growth on Silicon Substrates and New Mid-Infrared Laser Fabrication Methods

Molecular Beam Epitaxial Growth of IV–VI Multiple Quantum Well Structures on Si(111) and BaF2(111) and Optical Studies of Epilayer Heating

High-quality single InGaAs/GaAs quantum dot growth on a CMOS-compatible silicon substrate for quantum photonic applications

Epitaxial growth of quantum dots on van der Waals surfaces

Reliable InAs quantum dot lasers grown on patterned Si (001) substrate with embedded hollow structures assisted thermal stress relaxation

Efficient single-photon emission from electrically driven InP quantum dots epitaxially grown on Si(001)

Growth of A Periodic Inp-Based Heteroepitaxial Structure for A Quantum Cascade Laser

Selectively Grown III-V Lasers for Integrated Si-Photonics

Telecom InGaAs/InP Quantum Well Lasers Laterally Grown on Silicon-on-Insulator