Abstract:The threshold voltage modulation of carbon nanotube thin-film transistors (TFTs) and flexible three-dimensional (3D) integration circuits has become hot research topics for carbon-based electronics. In this paper, a doping-free gate electrode technology is introduced to significantly modulate the threshold voltage of polymer-sorted semiconducting single-walled carbon nanotube (sc-SWCNT) TFTs in combination with the highly effective gate-controlling ability of solid-state electrolyte thin films as the dielectrics. A systematic investigation was conducted on the impact of printed silver, evaporated silver, and evaporated aluminum (Al) gate electrodes on the threshold voltage of flexible printed bottom-gate and top-gate SWCNT TFTs. The results indicate that the SWCNT TFTs with Al gate electrodes exhibit enhancement-mode characteristics with excellent electrical properties, such as the negative threshold voltages (−0.6 V), high Ion/Ioff (up to 106), low subthreshold swing (61.4 mV · dec−1), and small hysteresis. It is attributed to either the formation of lower work function thin films (Al2O3) at the electrode/dielectric layer interfaces through the natural oxidation of the Al bottom-gate electrodes or the dipole reaction of the Al top-gate electrodes from X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) data. In addition, 3D complementary metal-oxide-semiconductor (CMOS) inverters with common gate electrodes were constructed using the resulting enhancement-mode P-type SWCNT TFTs and matched N-type SWCNT TFTs, which shows high voltage gain (34), rail-to-rail output and high noise margins (80.04

Tuning the electrical performance and bias stability of a semiconducting SWCNT thin film transistor with an atomic layer deposited AlZrOx composite

Improving the Performance of Aligned Carbon Nanotube-Based Transistors by Refreshing the Substrate Surface.

Realization of Solution-Processed Semiconducting Single-Walled Carbon Nanotubes Thin Film Transistors with Atomic Layer Deposited ZrAlOx Gate Insulator

High-Performance Polycrystalline Sige Thin-Film Transistors Using Al2o3 Gate Insulators

Tuning the charge carrier polarity of roll-to-roll gravure printed carbon nanotube-based thin film transistors by an atomic layer deposited alumina nanolayer

Atomic Layer Deposition Deposited High Dielectric Constant (κ) ZrAlOx Gate Insulator Enabling High Performance ZnSnO Thin Film Transistors

Feasibility of Atomic Layer Deposited AlZrOx Film to Achieve High Performance and Good Stability of ZnSnO-TFT

Low-temperature, High-Mobility Solution-Processed P-Channel Thin-Film Transistors with Semiconducting Single-Walled Carbon Nanotube/nio X Composites

Flexible Printed Three Dimensional (3D) Integrated Carbon Nanotube Complementary Metal Oxide Semiconductor (CMOS) Thin Film Transistors and Circuits

Performance Enhancement in InZnO Thin-Film Transistors with Compounded ZrO2–Al2O3 Nanolaminate As Gate Insulators

Performance Enhancement of Solution-Processed InZnO Thin-Film Transistors by Al Doping and Surface Passivation

High-performance Carbon Nanotube/ingazno Composite Thin Film Transistors and Concentration Effect

The Al2O3 Gate Insulator Modified by SiO2 Film to Improve the Performance of IGZO TFTs

Improved Performance and Bias Stability of Al2O3/IZO Thin-Film Transistors with Vertical Diffusion

High Performance ZnSnO Thin Film Transistor with ZrO2 Gate Insulator Formed by Atomic Layer Deposition

Effect of surface wettability properties on the electrical properties of printed carbon nanotube thin-film transistors on SiO2/Si substrates.

Enhanced Performance of Atomic Layer Deposited Thin-Film Transistors with High-Quality ZnO/Al 2 O 3 Interface

Huge mobility enhancement of InSnZnO thin-film transistors via Al-induced microstructure regularization

Fabrication and Testing of Solution-Processed Carbon Nanotube Thin Film Transistor

Solution-processed Zinc Oxide Nanoparticles/single-Walled Carbon Nanotubes Hybrid Thin-Film Transistors

Preparation and Characterization of Solution-Processed Nanocrystalline p -Type CuAlO 2 Thin-Film Transistors