Normal and Abnormal Dielectric Relaxation Behavior in KTaO3 Ceramics

Lei Tong,Jie Sun,Shuting Wang,Youmin Guo,Qiuju Li,Hong Wang,Chunchang Wang

DOI: https://doi.org/10.1039/c7ra09866a

IF: 4.036

2017-01-01

RSC Advances

Abstract:KTaO3 ceramic samples were prepared via a conventional solid state reaction route.

What problem does this paper attempt to address?

Low Temperature Dielectric Relaxation in Complex Perovskite Bati0.8(Ni0.5nb0.5)(0.2)O-3 Ceramics

Zhengliang Huang,Jingji Zhang,Ludong Ji,Jiangying Wang,Jiwei Zhai,Faxin Yu

DOI: https://doi.org/10.1016/j.jallcom.2014.03.187

IF: 6.2

2014-01-01

Journal of Alloys and Compounds

Abstract:Structure and dielectric properties of complex perovskite BaTi0.8(Ni0.5Nb0.5)(0.2)O-3 ceramics have been investigated by X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), electron paramagnetic resonance (EPR) and dielectric spectroscopy. XRD and Raman data show that the BaTi0.8(Ni0.5Nb0.5)(0.2)O-3 ceramics have a superstructure unit cell with Fm (3) over barm space group. The dielectric characteristics in the 175-250 K region are confirmed to be an incipient ferroelectric response with frequency dependent relaxation, which is attributed to the Ni-Ni(3+2+) - V-O dipolar defect. (c) 2014 Elsevier B.V. All rights reserved.
Influence of Point Defects in KTaO3 on Low-Temperature Dielectric Relaxation

Anna-Karin Axelsson,Matjaz Valant,Neil McN. Alford

DOI: https://doi.org/10.1016/j.jeurceramsoc.2009.09.034

IF: 5.7

2009-01-01

Journal of the European Ceramic Society

Abstract:Substituted KTaO3 ceramics were synthesized, sintered and studied using low-temperature microwave dielectric analysis and Raman spectroscopy. Because of a fundamentally different nature of aliovalent Mn- and isovalent Na-substitution mechanisms, significant differences in processing and dielectric properties were identified. The properties were correlated to the defect structure of the substituted KTaO3 lattices. Characteristics of the induced polar domains were clearly different for the two substitutional mechanisms, which further reflects in a significantly different dielectric behavior. Linear response of changes in the Raman spectra corresponds to evidence of the formation of symmetry-breaking regions.
Dielectric Relaxations in Multiferroic La2ti2o7 Ceramics

N. Zhang,Q. J. Li,S. G. Huang,Y. Yu,J. Zheng,C. Cheng,C. C. Wang

DOI: https://doi.org/10.1016/j.jallcom.2015.08.169

IF: 6.2

2015-01-01

Journal of Alloys and Compounds

Abstract:La2Ti2O7 ceramic samples were prepared via conventional solid-state reaction route. The dielectric properties of La2Ti2O7 were investigated as functions of temperature (113-1073 K) and frequency (100 Hz(-1) MHz). Our results revealed that La2Ti2O7 ceramics exhibit intrinsic dielectric response with a dielectric constant of similar to 57 in the temperature range below 250 K. Three thermally activated dielectric relaxations were observed when the temperature higher than 250 K. The low-temperature relaxations R1 with the activation energy of 0.38 eV is found to be a polaron relaxation results from hopping holes. The high-temperature relaxations R2 and R3 are related to the conduction progress associated with the singly and doubly ionized oxygen vacancies, respectively. (C) 2015 Elsevier B.V. All rights reserved.
Dielectric Relaxation Behavior and Mechanism of Y2/3Cu3Ti4O12 Ceramic

Jianming Deng,Laijun Liu,Xiaojun Sun,Saisai Liu,Tianxiang Yan,Liang Fang,Brahim Elouadi

DOI: https://doi.org/10.1016/j.materresbull.2017.01.005

IF: 5.6

2017-01-01

Materials Research Bulletin

Abstract:•Y2/3Cu3Ti4O12 (YCTO) ceramics were prepared in different atmospheres.•Dielectric loss of YCTO sintered in O2 atmosphere decreased drastically.•Scaling behavior indicates the relaxation time is temperature independent.•Small polaron hopping is the most probable conduction mechanism.•Distribution of local electrical response time is temperature independent.
Oxygen-vacancy-related dielectric relaxations in Na0.5K 0.5NbO3

Chunchang Wang,Jing Wang,X. H. Sun,Naliu Liu,J. H. Zhang,Jun Zheng,Chao Cheng

DOI: https://doi.org/10.1016/j.ssc.2013.11.008

IF: 1.934

2014-01-01

Solid State Communications

Abstract:Na0.5K0.5NbO3 ceramic samples were prepared via the solid-state reaction route. The low-frequency (20–107Hz) dielectric properties were investigated in the temperature range from room temperature to 1073K. Two relaxations were observed in the spectra of electric modulus. Relaxation 1 occurs in the orthorhombic phase, which was ascribed to be related to the oxygen-vacancy clusters. Relaxation 2 appears in the tetragonal and cubic phases. It behaves as a Maxwell–Wagner-type and polaron-type relaxation in the tetragonal and cubic phase, respectively.
Structure and Dielectric Relaxations of CaCu3Ti4O12 Ceramics by Heat Treatments in Different Atmospheres

Xuetong Zhao,Lulu Ren,Lijun Yang,Shuai Li,Ruijin Liao,Weiwei Li,Jianying Li

DOI: https://doi.org/10.1109/tdei.2017.006278

IF: 2.509

2017-01-01

IEEE Transactions on Dielectrics and Electrical Insulation

Abstract:CaCu3Ti4O12 (CCTO) ceramics have drawn much attention for their potential application in energy storage components and overvoltage protection devices. In order to improve the electrical properties and understand the colossal dielectric behavior, several CCTO ceramic samples were prepared and heat treated in different atmospheres. The results showed that the breakdown field and nonlinear coefficient were effectively intensified, and the dielectric loss was reduced after heat treatments in the oxidizing atmosphere including air and oxygen. However, CCTO phases will decompose into TiO2, CuO and CaTiO3 phases when heat treated in the neutral atmosphere such as nitrogen, losing its colossal dielectric behaviors and excellent electrical properties. It was found that the oxygen atmosphere played the most beneficial effect in improving the characteristics of CCTO ceramics in this research. The maximum stored energy density of CCTO can be promoted from 7.7 to 26.5 kJ/m(3), and the barrier height between grain boundaries were increased from 0.46 to 0.62 eV which may be closely related with its high breakdown filed. Three dielectric relaxations were observed in CCTO ceramics. After heat treatment in oxygen atmosphere, the activation energies of the two relaxation peaks (peak 1 and peak 2) in high frequencies kept nearly constant, at 0.11 and 0.51 eV respectively, while the activation energy of relaxation peak 3 at low frequency were enhanced from 0.75 to 0.85 eV, which may be related to the oxygen vacancy defects. Moreover, the contribution of dc conductivity to dielectric loss can be effectively restrained. An equivalent circuit model was proposed according to impedance analysis to expound the correlation between electrical properties and dielectric relaxations.
Dielectric properties and relaxation mechanism of CaCu3Ti4O12 ceramics

cheng pengfei,wang hui,li shengtao

DOI: https://doi.org/10.7498/aps.62.057701

IF: 0.906

2013-01-01

Acta Physica Sinica

Abstract:In this paper, the dielectric property of CaCu3Ti4O12 ceramic is measured by Novocontrol wide band dielectric spectrometer in a temperature range of -100-100 degrees C and frequency range of 0.1 Hz-10 MHz, and the corresponding dielectric relaxation mechanism is discussed. Firstly, on the basis of quantitative analysis of macroscopic shell-core structure, the possibility of colossal dielectric constant (CDC) originating from the surface insulated layer effect is rejected. Secondly, after the analysis of the nature of classical Maxwell-Wagner sandwich polarization and its activation energy, classical Maxwell-Wagner mechanism is also abandoned. Finally, a new model of trapped electron relaxation at the boundary of Schottky barrier is proposed. The new mechanism correctly reflects the essential connection between intrinsic point defects, conductivity and dielectric constant of CaCu(3)Ti(4)O(12)material.
Dielectric relaxation behavior of ceramics in the Pb(Zn1/3Nb2/3)O-3-BaTiO3-PbTiO3 system

zhenxing yue,wang xiaoli,liangying zhang,yao xi,ZX Yue,XL Wang,LY Zhang,X Yao

1997-01-01

Acta Physica Sinica (Overseas Edition)

Abstract:The dielectric properties of ceramics in Pb(Zn1/3Nb2/3) O-3-BaTiO3-PbTiO3 system were characterized using dielectric-temperature spectra. A spontaneous (zero field) relaxer-normal ferroelectric transition was observed for tetragonal-rich compositions. A significant hysteresis' effect accompanied by this transition, similar to first-order phase transition of normal ferroelectrics. This behavior was different from that of other relaxers, in which such transitions occurred only under a biased de field. This observation was explained in terms of a thermally driven transformation from an ensemble of polar microregions to normal long-range ferroelectric state (micro-macro domain transition), which was attributed to the internal field resulting from the tetragonal strain.
Dielectric Relaxation in Tb0.5Y0.5MnO3 Ceramics

Chao Zhang,Xiaofei Wang,Dawei Kang,Jianfei Lei,Liben Li,Xiaomei Lu,Jinsong Zhu

DOI: https://doi.org/10.1016/j.matlet.2014.06.119

IF: 3

2014-01-01

Materials Letters

Abstract:We present here the structural and dielectric properties of Tb0.5Y0.5MnO3 ceramics synthesized by solid state reaction. The X-ray diffraction pattern shows that the sample has an orthorhombic structure with space group Pbnm. Dielectric characteristics of Tb0.5Y0.5MnO3 ceramics are investigated over a broad temperature and a frequency range. Two dielectric relaxations are observed at 40–90 and 100–220 K. The results indicate that the low temperature dielectric relaxation (LTDR) may be exhibited variable ranger hopping behavior due to the oxygen vacancies (VO+), while the high temperature dielectric relaxation (HTDR) may come from the dipolar effects associated with the charge carrier hopping between Mn2+ and Mn3+.
Relaxor-like behaviors in Na1/2Bi1/2Cu3Ti4O12 ceramics

Chunchang Wang,Wei Ni,Xiaohong Sun,Le Wang,Can Wang,Kui-juan Jin

DOI: https://doi.org/10.1111/jace.14720

IF: 4.186

2017-01-01

Journal of the American Ceramic Society

Abstract:Dielectric properties of Na1/2Bi1/2Cu3Ti4O12 ceramics were evaluated over the temperature range 300-720 K. Two relaxor-like dielectric anomalies were found. The low-temperature anomaly was confirmed to be an oxygen-vacancy-related relaxation process. It is a pseudo-relaxor behavior caused by a bulk relaxation and a Maxwell-Wagner relaxation. The high-temperature one was evidenced to be an electric ferroelectric phase-transition process resulting from the oxygen-vacancy ordering.
ChemInform Abstract: Dielectric Relaxations in Multiferroic La2Ti2O7 Ceramics.

N. Zhang,Q. J. Li,S. G. Huang,Y. Yu,J. Zheng,C. Cheng,C. C. Wang

DOI: https://doi.org/10.1002/chin.201549011

2015-01-01

ChemInform

Abstract:AbstractThe title ceramics is prepared by solid state reaction of stoichiometric mixtures of La2O3 and TiO2 (1000 °C, 24 h, followed by sintering at 1350 °C for 10 h).
Dielectric Relaxations in Rutile TiO2

Chunchang Wang,Nan Zhang,Qiuju Li,Yi Yu,Jian Zhang,Yide Li,Hong Wang

DOI: https://doi.org/10.1111/jace.13250

IF: 4.186

2014-01-01

Journal of the American Ceramic Society

Abstract:Dielectric properties of high‐purity (4N degree) rutile TiO2 ceramics were investigated over a wide temperature (100–1073 K) and frequency (20 Hz–10 MHz) ranges. X‐ray photoemission spectroscopy measurement revealed the sample possesses mixed‐valent states of Ti3+/Ti4+. Four thermally activated relaxations were observed. The lowest temperature relaxation (R1) features two Arrhenius segments with activation energy of 30 and 80 meV for the low‐ and high‐temperature segments, respectively. This relaxation was argued to be a polaron relaxation due to electrons hopping between Ti3+ and Ti4+ ions. The second relaxation (R2) appears around room temperature showing activation energy of 0.68 eV is believed to be a Maxwell‐Wagner relaxation. The high‐temperature relaxations R3 and R4 with activation energy of 0.84 and 1.26 eV were ascribed to the conduction process due to the hopping motions of singly and doubly charged oxygen vacancies, respectively.
Dielectric Relaxations of Laalo3 Ceramics over Broad Temperature Range

Changmei Lei,Chunchang Wang,Guojing Wang,Xiaohong Sun,Teng Li,Lina Liu

DOI: https://doi.org/10.1016/j.jallcom.2012.12.041

IF: 6.2

2013-01-01

Journal of Alloys and Compounds

Abstract:LaAlO3 ceramics were prepared via the solid-state reaction route. The low-frequency dielectric properties were investigated in detail in a broad temperature range from 100 to 1100K. We found that LaAlO3 shows a flat dielectric plateau independent of frequency and temperature below 500K. When temperature higher than 500K, two thermally activated dielectric relaxations were observed with the activation energy of 1.13eV for the low-temperature relaxation and 1.9eV for the high-temperature relaxation. Our result indicates that the low-temperature relaxation is related to the bulk effect due to hopping motions of oxygen vacancies and the high-temperature relaxation was associated with the Maxwell–Wagner relaxation due to the interface effect.
Dielectric Relaxation and Electrical Conductivity in Ca5Nb4TiO17 Ceramics

Chunchun Li,Xiaoyong Wei,Liang Fang,Haixue Yan,Michael J. Reece

DOI: https://doi.org/10.1016/j.ceramint.2015.04.071

IF: 5.532

2015-01-01

Ceramics International

Abstract:The temperature dependence of dielectric properties and electrical conduction of Ca5Nb4TiO17 ceramics were characterized in a broad temperature range. A dielectric anomaly with strong frequency dispersion was detected in the temperature range 700–1010°C. This dielectric relaxation could be almost removed completely by annealing in an oxidizing atmosphere. Complex impedance analysis confirmed the electrical inhomogeneity of the ceramics with different contributions from the bulk and grain boundaries. This suggests that the main mechanism for the observed relaxation is the Maxwell–Wagner polarization. ac conductivity results revealed the variation of conduction mechanism with increasing temperatures from localized hopping to long-range motion of the doubly ionized oxygen vacancies.
The abnormal multiple dielectric relaxation responses of Al3+ and Nb5+ co-doped rutile TiO2 ceramics

Xiao-gang Zhao,Lin Chen,Xiang-yu Zhang,Peng Liu,Chun-Long Xu,Zhao-Yang Hou,Zhen Wang,Feng-Long Wang,Jin-Guo Wang,Gang Shi

DOI: https://doi.org/10.1016/j.jallcom.2020.157891

IF: 6.2

2021-04-01

Journal of Alloys and Compounds

Abstract:Al3+ and Nb5+ co-doped rutile TiO2 ceramic samples were prepared by solid state reaction. Raman spectra, element mapping and EDX confirmed that (Al + Nb) dissolved into grain. The samples showed colossal permittivity (ε′≈3.8 × 104) with low dielectric loss (under 0.08) over frequency (20 Hz–100 kHz) and temperature (80 K–240 K) ranges. Abnormal multiple dielectric relaxation properties were obtained around 5 K. Using universal relaxation law and thermal polaron hopping, we concluded that high dielectric constant of (Al1/2Nb1/2)0.05Ti0.95O2 was due to thermal activation of electrons in defect-dipoles, polaron hopping polarization and interfacial polarization. This investigation could increase our understanding models of multiple dielectric relaxation and inhomogeneous composition in co-doped rutile TiO2.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Dielectric Relaxation Behavior and Mechanism of Y 2/3 Cu 3 Ti 4 O 12 Ceramic

Jianming Deng,Laijun Liu,Xiaojun Sun,Saisai Liu,Tianxiang Yan,Liang Fang,Brahim Elouadi

DOI: https://doi.org/10.1016/j.materresbull.2017.01.005

IF: 5.6

2017-01-01

Materials Research Bulletin

Abstract:Y2/3Cu3Ti4O12 (YCTO) ceramics were sintered in air (YCTO-air) and pure O2 atmosphere (YCTO-O2), respectively. It was found that the permittivity and dielectric loss of YCTO-O2 were decreased drastically in low frequency. The frequency dependent impedance (Z″) and modulus (M″) spectra of YCTO-air and YCTO-O2 show a thermal activated process. The scaling behavior of both Z″ and M″ spectra further suggest that the distribution of relaxation times is temperature independent. The Cole–Cole plot in impedance formalism shows that electrical response of the samples originates from both grains and grain-boundaries. Conductivity (σ′) spectra follow Universal Dielectric Repose law. The short-range translation hopping assisted by small polaron hopping mechanisms for YCTO-O2. Moreover, the scaling behavior of σ′ spectra further confirms that the distribution of local electrical response time is temperature independent.
Understanding the Thermally Stimulated Relaxation and Defect Behavior of Ti-Containing Microwave Dielectrics: A Case Study of Bati4o9

Jie Zhang,Zhenxing Yue,Yu Luo,Xiaohua Zhang,Longtu Li

DOI: https://doi.org/10.1016/j.matdes.2017.05.086

IF: 9.417

2017-01-01

Materials & Design

Abstract:Relaxation phenomena in dielectrics are well known to be closely related to their defect chemistry. However, the relaxation behavior of microwave dielectrics has seldom been considered, despite these materials being an important member of the electroceramic family. Here, the relaxation behavior of the typical microwave dielectric ceramic barium tetratitanate (BaTi4O9) was investigated. Significant thermally stimulated relaxation was observed in both dielectric spectroscopy and thermally stimulated depolarization current (TSDC) measurements, and the correlation between relaxation and defect behavior was addressed. TSDC characterization revealed that defect dipoles [(TiTi')−(VO••)] with activation energies (Ea) of 0.32–0.36eV appeared at low temperature, while in-grain and across-grain boundary oxygen vacancies (VO••) appeared at higher temperature, yielding Ea of 0.30–0.48eV and 0.65–1.01eV, respectively. It was further believed that these two types of defects, (TiTi')−(VO••) and VO••, were correspondingly responsible for the dielectric relaxation observed at low and high temperature. The relaxation behavior of several typical Ti-containing microwave dielectrics, such as BaTi4O9, TiO2, MgTiO3 and Ca0.8Sr0.2TiO3, was compared, which suggests that microwave dielectric performance and defect behavior are closely related to the connections of TiO6 octahedra in the materials.
Dielectric properties and high-temperature dielectric relaxation of Ba3Ti4Nb4O21 ceramic

Liang Fang,Fei Xiang,Wei Liao,Laijun Liu,Hui Zhang,Xiaojun Kuang

DOI: https://doi.org/10.1016/j.matchemphys.2013.09.031

IF: 4.778

2014-01-01

Materials Chemistry and Physics

Abstract:A3B8O21 hexagonal perovskite-like Ba3Ti4Nb4O21 ceramics were synthesized by a conventional solid-state reaction technique, which exhibit high dielectric constant at room temperature. A high-temperature dielectric relaxation was observed in frequency range from 40 Hz to 1 MHz above the Curie temperature. The real and imaginary parts of the impedance (Z′ and Z″) as functions of frequency indicate the presence of two relaxation processes at high temperatures, which are attributed to grain and grain boundary responses. The conductivities of both grain and grain boundary obey the Arrhenius law with activation energies of 1.04 eV and 1.27 eV, respectively. The dielectric relaxation processes are related to the oxygen vacancies inside the ceramic, indicating that the Q × f value of Ba3Nb4Ti4O21 might be improved via eliminating oxygen vacancies.
Oxygen-Vacancy-Related Dielectric Relaxations in Srtio3 at High Temperatures

C. C. Wang,C. M. Lei,G. J. Wang,X. H. Sun,T. Li,S. G. Huang,H. Wang,Y. D. Li

DOI: https://doi.org/10.1063/1.4794349

IF: 2.877

2013-01-01

Journal of Applied Physics

Abstract:We herein present comparative investigation on the dielectric properties of both ceramic and single crystal SrTiO3 samples in the temperature from room temperature to 1073 K. Two relaxations were observed in both samples. They behave as Debye-like and relaxor-like relaxations in ceramic and single crystal samples, respectively. These relaxations were found to be bulk effect related to oxygen-vacancy. In single crystal sample, the relaxations result from the long-range conduction associated with singly and doubly charged oxygen vacancies. In ceramic sample, the oxygen vacancies are more strongly localized in relation to the crystal. This leads to a new phenomenon of formation and dissociation of oxygen vacancy clusters before the vacancies make contribution to the long-range conduction. The low-temperature relaxation in ceramic sample was determined by the clustering and dissociating processes of the oxygen vacancies. The high-temperature relaxation in ceramic sample was found to share the same mechanism as that in the single crystal sample.
Dielectric Relaxation Behavior of Ceramics in the Pb(Zn 1/3 Nb 2/3 )O 3 -Batio 3 -Pbtio 3 System

Yue Zhen-xing,Wang Xiao-li,Zhang Liang-ying,Yao Xi

DOI: https://doi.org/10.1088/1004-423x/6/12/005

1997-01-01

Acta Physica Sinica (Overseas Edition)

Abstract:The dielectric properties of ceramics in Pb(Zn1/3Nb2/3)O3-BaTiO3-PbTiO3 system were characterized using dielectric-temperature spectra. A spontaneous (zero field) relaxor-normal ferroelectric transition was observed for tetragonal-rich compositions. A significant hysteresis effect accompanied by this transition, similar to first-order phase transition of normal ferroelectrics. This behavior was different from that of other relaxors, in which such transitions occurred only under a biased dc field. This observation was explained in terms of a thermally driven transformation from an ensemble of polar microregions to normal long-range ferroelectric state (micro-macro domain transition), which was attributed to the internal field resulting from the tetragonal strain.

Normal and Abnormal Dielectric Relaxation Behavior in KTaO3 Ceramics

Low Temperature Dielectric Relaxation in Complex Perovskite Bati0.8(Ni0.5nb0.5)(0.2)O-3 Ceramics

Influence of Point Defects in KTaO3 on Low-Temperature Dielectric Relaxation

Dielectric Relaxations in Multiferroic La2ti2o7 Ceramics

Dielectric Relaxation Behavior and Mechanism of Y2/3Cu3Ti4O12 Ceramic

Oxygen-vacancy-related dielectric relaxations in Na0.5K 0.5NbO3

Structure and Dielectric Relaxations of CaCu3Ti4O12 Ceramics by Heat Treatments in Different Atmospheres

Dielectric properties and relaxation mechanism of CaCu3Ti4O12 ceramics

Dielectric relaxation behavior of ceramics in the Pb(Zn1/3Nb2/3)O-3-BaTiO3-PbTiO3 system

Dielectric Relaxation in Tb0.5Y0.5MnO3 Ceramics

Relaxor-like behaviors in Na1/2Bi1/2Cu3Ti4O12 ceramics

ChemInform Abstract: Dielectric Relaxations in Multiferroic La2Ti2O7 Ceramics.

Dielectric Relaxations in Rutile TiO2

Dielectric Relaxations of Laalo3 Ceramics over Broad Temperature Range

Dielectric Relaxation and Electrical Conductivity in Ca5Nb4TiO17 Ceramics

The abnormal multiple dielectric relaxation responses of Al3+ and Nb5+ co-doped rutile TiO2 ceramics

Dielectric Relaxation Behavior and Mechanism of Y 2/3 Cu 3 Ti 4 O 12 Ceramic

Understanding the Thermally Stimulated Relaxation and Defect Behavior of Ti-Containing Microwave Dielectrics: A Case Study of Bati4o9

Dielectric properties and high-temperature dielectric relaxation of Ba3Ti4Nb4O21 ceramic

Oxygen-Vacancy-Related Dielectric Relaxations in Srtio3 at High Temperatures

Dielectric Relaxation Behavior of Ceramics in the Pb(Zn 1/3 Nb 2/3 )O 3 -Batio 3 -Pbtio 3 System