Abstract:In AlGaN/GaN heterostructure field effect transistors (HFETs), two-dimensional-electron-gas (2DEG), induced by strong piezoelectric and spontaneous polarization field, has high sheet density, and can be tuned up to 5 x 10(13) cm(-2) with pure AlN barrier.[Appl. Phys. Lett. 90, 182112 (2007)].For Al compositions larger than 40%, due to the large lattice mismatch between GaN and AlGaN, strain-related issues significantly reduce the mobility for these high sheet carrier densities. Recently, using nearly lattice-matched AlInN/GaN to improve the performance of HFETs has been studied theoretically and experimentally. A high sheet density (2.42 x 10(13) cm(2)) with >1000 cm(2) Ns mobility has been reported by inserting an AlN spacer layer between the AlGaN barrier and GaN channel. However, low-temperature mobilities for AlInN/GaN HFETs are much lower than those for AlGaN/GaN HFETs. In this paper, we study the Al1-xInxN/AlN/GaN (x=0.20 - 0.12) (HFETs) grown by metalorganic chemical vapor deposition. Reduction of In composition from 20% to 12% increased the room temperature equivalent two-dimensional-electron-gas (2DEG) density from 0.90 x 10(13) cm(-2) to 1.64 x 10(13) cm(-2) with corresponding electron mobilities of 1600 cm(2)/Vs and 1410 cm(2)/Vs. Furthermore, at 10 K, the mobility reached 17,600 cm(2) Ns with a sheet density 9.6 x 10(12) cm(-2) for the nearly lattice-matched Al0.82In0.18N /AlN/GaN heterostructure. The HFETs having 1 mu m gate length exhibited a maximum transconductance of - 250 mS/mm with good pinch-off characteristics.

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