Abstract:HfO2-based resistive random-access memory (RRAM) with a Ti buffer layer has been extensively studied as an emerging nonvolatile memory (eNVM) candidate because of its excellent resistive switching (RS) properties and CMOS process compatibility. However, a detailed understanding of the nature of Ti thickness-dependent RS and systematic thermal degradation research about the effect of post-metallization annealing (PMA) time on oxygen vacancy distribution and RS performance still needs to be included. Herein, the impact of Ti buffer layer thickness on the RS performance of the Al/Ti/HfO2/TiN devices is first addressed. Consequently, we have proposed a simple strategy to regulate the leakage current, forming voltage, memory window, and uniformity by varying the thickness of the Ti layer. Moreover, it is found that the device with 15 nm Ti shows the minimum cycle-to-cycle variability (CCV) and device-to-device variability (DDV), good retention (105 s at 85 °C), and superior endurance (104). In addition, thermal degradation of the Al/Ti(15 nm)/HfO2/TiN devices under different PMA times at 400 °C is carried out. It is found that the leakage current increases and the forming voltage and memory window decrease with the increase in PMA time due to the thermally activated oxidation of the Ti. However, when the PMA time increases to 30 min, the Ti can no longer capture oxygen from HfO2 due to the formation of self-limited TiOx. Therefore, the device shows superior thermal stability with a PMA time of 90 min at 400 °C and no degradation of the memory window, uniformity, endurance, or retention. This work demonstrates that the Ti/HfO2-based RRAM shows superior back-end-of-line compatibility with high thermal stability up to 400 °C for over an hour.

Influence of HfAlO Composition on Resistance Ratio of RRAM with Ti Electrode

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Impact of Al Alloying/Doping on the Performance Optimization of HfO2-Based RRAM

Compliance Current Effect on Switching Behavior of Hafnium Oxide Based RRAM

ALD HfO2 Based RRAM with Ti Capping

Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

Kwong ALD HfO 2 Based RRAM with Ti Capping

Resistive Switching Properties of HfO[sub 2]-Based ReRAM with Implanted Si/Al Ions

Uniformity Improvement of Al-doped HfO2 Resistive Switching Memory Devices Using a Novel Diffusion Approach

Improvement of HfOx-Based RRAM Device Variation by Inserting ALD TiN Buffer Layer

Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices

Effects of Electrodes on the Filament Formation in HfO2-Based Resistive Random Access Memory

Effects of Oxygen Partial Pressure on the Sputtered Hafnium Oxide Thin Films for Resistive Random-Access Memory

Effect of Rapid Thermal Annealing on Resistive Switching Uniformity of HfAlOx Based RRAM Devices

Self-compliance Multilevel Resistive Switching Characteristics in TiN/HfOx/Al/Pt RRAM Devices

Investigation on self-rectifying properties of Pt/HfO2/Ti with rivet-like structure based on ALD conformal technology

Optimization of Bilayer Resistive Random Access Memory Based on Ti/HfO2/ZrO2/Pt

Optimization of the Forming Process of HfOx-Based RRAM to Achieve Bidirectional Forming and Enhanced Switching Performance by Inserting an Oxygen-Vacancy-Rich Layer

Effects of Different Dopants on Switching Behavior of HfO2-based Resistive Random Access Memory

Optimization of Bilayer Resistive Random Access Memory Based on Ti/HfO<sub>2</sub>/ZrO<sub>2</sub>/Pt