Electronic Properties of Cr-N Codoped Rutile TiO2(110) Thin Films

Zhengwang Cheng,Lili Zhang,Shihui Dong,Xiaochuan Ma,Huanxin Ju,Junfa Zhu,Xuefeng Cui,Jin Zhao,Bing Wang
DOI: https://doi.org/10.1016/j.susc.2017.09.003
IF: 1.9
2017-01-01
Surface Science
Abstract:We report our investigation on the electronic properties of Cr-N codoped rutile TiO2(110) single crystal thin films, homoepitaxially grown by pulsed-laser-deposition method, and characterized using scanning tunneling microscopy and spectroscopy (STM/STS), X-ray/ultraviolet photoemission spectroscopy (XPS/UPS), in combination with first-principles calculations. Our results show that the bandgap reduction of the TiO2(110) surface is mainly contributed by the delocalized states whose position is at 2.0 eV below the Fermi level, introduced by the substitutional codoped Cr-2N pair, which is evidenced by the accordance of the results between the STS spectra and the calculated DOS. The codoped Cr-N pair contributes the gap state at about 0.8 eV below the Fermi level, in consistent with the theoretical calculations. While, the monodoped Cr contributes the states either close to the valence band maximum or the conduction band minimum, which should not contribute to the bandgap reduction too much. Our experimental results joint with theoretical calculations provide an atomic view of the bandgap reduction of the rutile TiO2(110) surface, which indicates that the excess substitutional N atoms should be important to efficiently narrow the bandgap by introducing the Cr-2N pairs. (C) 2017 Elsevier B.V. All rights reserved.
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