Abstract:Scanning x-ray microbeam topography and fluorescence experiments were conducted in situ to study the electromigration behavior of a 0.5 μm thick, 10 μm wide, and 200 μm long Al(0.25 at. % Cu) conductor line with 1.5 μm-thick SiO2 passivation on a single crystal Si substrate. The strain sensitivity of x-ray topography measurement allowed detailed examination of the electromigration-induced stress distribution and evolution in the conductor line in response to the depletion of Cu solute early in the electromigration process. Upon electromigration at 0.4 MA/cm2 and 303 °C, a short-range stress gradient was quickly induced by Al migration in the Cu-depleted cathode region to counteract further Al flow. The stress gradient was fully developed during the 5.3 h incubation time, extending over the critical Blech length of about 66 μm from the cathode end. Plastic deformation then occurred at the downstream end of the Cu-depleted region. The preferential electromigration of Cu did not cause detectable stress change outside the Cu-depleted region, except for the significant stress development from the Al2Cu precipitation at the anode end which appeared to initiate the fracture in the passivation. Preliminary finite difference modeling was undertaken to simulate the experimental observations, from which important parameters dictating electromigration in Al(Cu) line were extracted: an apparent effective valence of −5.6 and −1.9 for Cu and Al in Al(Cu), respectively, and a critical Cu concentration of 0.16 at. % above which Al grain boundary diffusion is effectively blocked.

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Analysis of Degradation of Electromigration Reliability of Au-Al and OPM Wire Bonded Contacts at 250 °C Using Resistance Monitoring Method

The Electromigration Performance Improvement of Al-Si-Cu/Tin/Ti/N+Si Contact

Performance Comparison of Pt/Au and Ni/Au Schottky Contacts on Alxga1-X N/Gan Heterostructures at High Temperatures

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Investigation On The Different Barrier Effect Of Ni And Pt In The Ti/Al/Pt/Au And Ti/Al/Ni/Au Contacts To N-Type Gan

Investigation of the Mechanism for Ohmic Contact Formation in Ti/Al/Ni/Au Contacts to Β-Ga2o3 Nanobelt Field-Effect Transistors.

Mechanism of Ti/Al/Ti/W Au-free ohmic contacts to AlGaN/GaN heterostructures via pre-ohmic recess etching and low temperature annealing

Pd/Ge/Ti/Pt/Au Metal Stack on Semi-Insulating Gallium Arsenide: Ohmic Contact and Temperature Dependence

Ohmic Contact Mechanism of Ni/Au Contact to P-Type Gan Studied by Rutherford Backscattering Spectrometry

Characterization of electromigration-induced short-range stress development in Al(0.25 at. % Cu) conductor line

Microstructure and Grain Orientation Evolution in SnPb/SnAgCu Interconnects under Electrical Current Stressing at Cryogenic Temperature

Electromigration in Cu-Cored Sn-3.5Ag-0.7Cu Solder Interconnects under Current Stressing

Thermomigration-induced failure in ball grid array solder joint under high current stressing

Investigation of Stress Evolution Induced by Electromigration in Sn-Ag-Cu Solder Joints Based on an X-Ray Diffraction Technique

Study of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au ohmic contacts to n -GaN

Research on P-Type GaN / Au Ohmic Contact

Temperature dependence of contact resistance of Au-Ti-Pd2Si-n+-Si ohmic contacts