Exciton–phonon Interaction in Al 0.4 Ga 0.6 N/Al 0.53 Ga 0.47 N Multiple Quantum Wells

Ya-Li Liu,Peng Jin,Gui-Peng Liu,Wei-Ying Wang,Zhi-Qiang Qi,Chang-Qing Chen,Zhan-Guo Wang
DOI: https://doi.org/10.1088/1674-1056/25/8/087801
2016-01-01
Chinese Physics B
Abstract:The exciton-phonon interaction in Al 0.4 Ga 0.6 N/Al 0.53 Ga 0.47 N multiple quantum wells(MQWs) is studied by deepultraviolet time-integrated and time-resolved photoluminescence(PL).Up to four longitudinal-optical(LO) phonon replicas of exciton recombination are observed,indicating the strong coupling of excitons with LO phonons in the MQWs.Moreover,the exciton-phonon coupling strength in the MQWs is quantified by the Huang-Rhys factor,and it keeps almost constant in a temperature range from 10 K to 120 K.This result can be explained in terms of effects of fluctuations in the well thickness in the MQWs and the temperature on the exciton-phonon interaction.
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