Ultrafast All-Optical Imaging Technique Using Low-Temperature Grown GaAs/Al Ga1−As Multiple-Quantum-well Semiconductor

Guilong Gao,Jinshou Tian,Tao Wang,Kai He,Chunmin Zhang,Jun Zhang,Shaorong Chen,Hui Jia,Fenfang Yuan,Lingliang Liang,Xin Yan,Shaohui Li,Chao Wang,Fei Yin
DOI: https://doi.org/10.1016/j.physleta.2017.08.064
IF: 2.707
2017-01-01
Physics Letters A
Abstract:We report and experimentally demonstrate an ultrafast all-optical imaging technique capable of single-shot ultrafast recording with a picosecond-scale temporal resolution and a micron-order two-dimensional spatial resolution. A GaAs/AlxGa1−xAs multiple-quantum-well (MQW) semiconductor with a picosecond response time, grown using molecular beam epitaxy (MBE) at a low temperature (LT), is used for the first time in ultrafast imaging technology. The semiconductor transforms the signal beam information to the probe beam, the birefringent delay crystal time-serializes the input probe beam, and the beam displacer maps different polarization probe beams onto different detector locations, resulting in two frames with an approximately 9 ps temporal separation and approximately 25 lp/mm spatial resolution in the visible range.
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