Abstract:This work reports a brand‐new voltage‐readable 2T memory cell employing a NOT‐gate‐like architecture. It combines ferroelectric and nano‐floating‐gate transistors in a voltage divider, achieving high noise tolerance for voltage output memory. Moreover, the conceptual design of the 1T2T FeRAM cell is also developed as a prospect for low‐cost voltage‐readable memory technology in wearable electronic applications. Organic nonvolatile memory has been considered a low‐cost memory technology for flexible electronics and Internet‐of‐things (IoT). However, a major concern is the nonuniformity of memory units, which is primarily caused by random grain boundaries, interface defects, and charge traps, making it difficult to develop high‐density reliable memory arrays. This nonuniformity problem would induce read error, which is directly caused by the narrow distribution margin of memory states and low noise tolerance in conventional organic memory cells. To break this limitation, a novel 2T memory cell employing a NOT‐gate‐like architecture achieving self‐enhancing noise tolerance is presented. This unique cell consists of a pair of commonly‐gated memory transistors with contradictory "write‐and‐erase" features. It functions as a voltage divider, producing a well‐distinguished binary voltage output capability. The concept and design model of this brand‐new 2T memory cell is thoroughly discussed. It is originally characterized by noise‐tolerant memory cells irrespective of device nonuniformity. The noise tolerance range of this 2T memory cell is also investigated. The binary voltage‐readable memory state with a large noise tolerance range is obtained. Moreover, the conceptual design of the 1T2T FeRAM cell is further developed for low‐cost voltage‐readable memory technology in wearable electronic applications.

Random Access Memory: Organic Ferroelectric-Based 1T1T Random Access Memory Cell Employing a Common Dielectric Layer Overcoming the Half-Selection Problem (Adv. Mater. 34/2017)

Organic Ferroelectric-Based 1T1T Random Access Memory Cell Employing a Common Dielectric Layer Overcoming the Half-Selection Problem

FETRAM. An Organic Ferroelectric Material Based Novel Random Access Memory Cell

Flexible Robust and High-Density FeRAM from Array of Organic Ferroelectric Nano-Lamellae by Self-Assembly.

Organic Nonvolatile 2T Memory Cell Employing a NOT‐Gate‐Like Architecture Toward Binary Output Level With Enhanced Noise Tolerance

Ferroelectric Field-Effect Transistors for Logic and In-Situ Memory Applications

Design and Analysis of an Ultra-Dense, Low-Leakage, and Fast FeFET-Based Random Access Memory Array

A Feasible Heterostructure of P(VDF-TrFE)/semiconductor for a Stable Multi-State Memory

A 3t/cell Practical Embedded Nonvolatile Memory Supporting Symmetric Read and Write Access Based on Ferroelectric FETs

Solution-processed 10 nm thick ferroelectric polymer film on a TiO2 nanolayer for flexible nonvolatile memories

Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors

Quasi-Nondestructive Read Out of Ferroelectric Capacitor Polarization by Exploiting a 2TnC Cell to Relax the Endurance Requirement

A New High-Reliable 2t/1c Feram Cell

Compact Modeling and Design Exploration of Non-Destructive Read-Out 1T1C FeRAM

A ferroelectric fin diode for robust non-volatile memory

C-AND: Mixed Writing Scheme for Disturb Reduction in 1T Ferroelectric FET Memory

Design and Simulation Analysis of a 3TnC MLC FeRAM Using a Nondestructive Readout and Offset-Canceled Sense Amplifier for High-Density Storage Applications

First demonstration of 2T0C-FeDRAM: a-ITZO FET and double gate a-ITZO/a-IGZO FeFET with a record-long multibit retention time of >4-bit and >2000 s

Asymmetric Ferroelectric-Gated Two-Dimensional Transistor Integrating Self-Rectifying Photoelectric Memory and Artificial Synapse

Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory.

High-Performance C60 Coupled Ferroelectric Enhanced MoS2 Nonvolatile Memory.