Complementary Metal–Oxide–Semiconductor Compatible 2D Layered Film‐Based Gas Sensors by Floating‐Gate Coupling Effect
Po‐Hung Tan,Che‐Hao Hsu,Ying‐Chun Shen,Chien‐Ping Wang,Kun‐Lin Liou,Jiaw‐Ren Shih,Chrong Jung Lin,Ling Lee,Kuangye Wang,Hong‐Min Wu,Tsung‐Yu Chiang,Yue‐Der Chih,Jonathan Chang,Ya‐Chin King,Yu‐Lun Chueh
DOI: https://doi.org/10.1002/adfm.202108878
IF: 19
2021-12-13
Advanced Functional Materials
Abstract:Abstract A 2D SnSe 2 layered film‐based gas detector incorporating a floating‐gate device coupled with metal interconnect wiring structures is proposed and demonstrated for the first time. Linear amplification can be readily implemented using a coupling ratio design, which refers to the capacitance ratio between the gate and device in the sense amplifier circuits. A sensitivity of 102 mV ppm −1 can be obtained using the 2D SnSe 2 layered film with a thickness of 10 nm. The 2D SnSe 2 layered film‐based complementary metal–oxide–semiconductor (CMOS) gas detector features highly sensitive, wide, and adjustable dynamic ranges with a real‐time response of the sub‐ppm detection limit on NO 2 gas. In addition, the synthesis process of the SnSe 2 layered film can occur at a low temperature and be operated at room temperature. Furthermore, 3 × 3 gas detector arrays with peripheral circuits demonstrate the functionality of multiple gas detection simultaneously and 16 × 16 arrays with a decoder and other peripheral circuits are constructed and simulated, providing the spatial distribution of the gas concentration in a specific region. The performance of the proposed detector is comparable to that of the other state‐of‐the‐art gas sensors.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology