Interface Engineering of Electron Transport Layer‐Free Planar Perovskite Solar Cells with Efficiency Exceeding 15 %

Feiyue Huang,Yuelin Wei,Lin Gu,Qiyao Guo,Hui Xu,Dan Luo,Shao Jin,Xiaomin Yang,Yunfang Huang,Jihuai Wu
DOI: https://doi.org/10.1002/ente.201700437
IF: 4.149
2017-01-01
Energy Technology
Abstract:A high-performance electron transport layer (ETL)-free planar fluorine-doped tin oxide (FTO)/perovskite/hole-transport material/Au solar cell was prepared. We revealed that a plasma-cleaning pretreatment for FTO substrates could significantly improve the quality of perovskite films, leading to the promotion of charge separation, an increase in the elec-tron-transport rate, and a decrease in the recombination reaction at the FTO/perovskite interface. Finally, the efficiency of the cells was greatly improved. A power conversion efficiency of over 15% and a fill factor of 0.68 were achieved under AM 1.5G 100 mW cm(-2) irradiation without the use of a compact n-type metal-oxide blocking layer.
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