Abstract:Low cost, high absorption coefficient, tunable band gap, and compatibility with flexible devices make lead sulfide (PbS) quantum dots (QDs) based photoconductors promising candidates for next-generation near-infrared (NIR) photodetectors. However, the detection performance of PbS QDs-based photoconductors still needs to be further improved, because there is a trade-off among the responsivity/detectivity/bandwidth in the device development process, that is, it is difficult to improve the three parameters simultaneously. Inspired by the design idea of sensitized phototransistor, a kind of amorphous indium gallium zinc oxide (a-IGZO)/PbS QDs heterojunction photoconductor is reported in this paper. The most prominent feature of this work is that a-IGZO, like a photocurrent “amplifier”, increases the photocurrent by several orders of magnitude without generating additional noise, and thus improves the sensitivity and responsiveness of the device. Compared with the initial pure PbS QDs-based photoconductor, the heterojunction device is able to increase the photocurrent by 3000 times together with a low dark current, and improve the response speed of the device with the help of interface-assisted carrier separation and recombination. In the NIR band, the device exhibits an exciting performance with a detectivity of 1.53 × 1013 Jones, a responsivity of 19070 mA/W and a decay time of 0.39 ms, respectively. By applying the a-IGZO/PbS QDs heterojunction to paper-based devices, a flexible device with bending resistance can be obtained, and the detection performance of the device does not deteriorate after 1000 times of bending.

Dual-Gate Phototransistor with Perovskite Quantum Dots-Pmma Photosensing Nanocomposite Insulator

Hybrid Field-Effect Transistors and Photodetectors Based on Organic Semiconductor and CsPbI3 Perovskite Nanorods Bilayer Structure

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Infrared Phototransistor Induced by MoS 2 Quantum Dots Encapsulated in Lead Iodide Perovskite

Hybrid Interfacial Engineering: An Enabling Strategy for Highly Sensitive and Stable Perovskite Quantum Dots/Organic Heterojunction Phototransistors

High-Performance Inorganic Perovskite Quantum Dot-Organic Semiconductor Hybrid Phototransistors

A Novel Phototransistor Device With Dual Active Layers Composited Of Cspbbr3 And Zno Quantum Dots

Enhanced UV–visible Detection of InGaZnO Phototransistors Via CsPbBr3 Quantum Dots

Gate Voltage Adjusting PbS‐I Quantum‐Dot‐Sensitized InGaZnO Hybrid Phototransistor with High‐Sensitivity

25.2: High Detectivity Perovskite‐IGZO Phototransistor with Tunable Photoconductive Gain

Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels*

High-Performance Photodetector with a-IGZO/PbS Quantum Dots Heterojunction

High Performances for Solution‐Pocessed 0D–0D Heterojunction Phototransistors

Enhanced Detectivity and Suppressed Dark Current of Perovskite-InGaZnO Phototransistor via PCBM Interlayer.

All-Inorganic Perovskite Quantum Dot-Monolayer MoS2 Mixed-Dimensional Van Der Waals Heterostructure for Ultrasensitive Photodetector.

A High-Performance Broadband Phototransistor Array of a PdSe2/SOI Schottky Junction

Photovoltage-Coupled Dual-Gate InGaZnO Thin-Film Transistors Operated at the Subthreshold Region for Low-Power Photodetection

Oxide Semiconductor Phototransistor with Organolead Trihalide Perovskite Light Absorber

High-performance broadband phototransistor array of PdSe2/SOI Schottky junction

A high-performance broadband phototransistor array of a PdSe2/SOI Schottky junction.

High Performance Phototransistors with Organic/quantum Dot Composite Materials Channels