Abstract:A reliable, highly efficient phototransistor would enable multifunctional photodetection and amplification and would also allow for electrical signal-readout processes. Lead halide perovskite semiconductors are known to generally have large mobilities and carrier lifetimes, which make them ideal candidates as photodetectors and for use in other electronics. Here, we demonstrate an infrared perovskite/MoS2 quantum dots' (QDs) phototransistor with a quick detection speed (40 mu s), high detectivity (5 x 10(11) Jones) even at high frequencies (10(4) Hz), reasonable linearity, and a wide spectrum response in infrared wavelengths. The realization of efficient infrared detection is due to the effective photo-induced charge between the perovskite/QDs' interface, which is achieved by combining the modulation of the electrical gate and optical light. These results are advantageous for infrared perovskite phototransistors.

Infrared Phototransistor Induced by MoS 2 Quantum Dots Encapsulated in Lead Iodide Perovskite