Abstract:For the epitaxial growth of Ga-based III-V semiconductor nanowires (NWs) on Si, Ga droplets could provide a clean and compatible solution in contrast to the common Au catalyst. However, the use of Ga droplets is rather limited except for that in Ga-catalyzed GaAs NW studies in a relatively narrow growth temperature (Ts) window around 620 °C on Si. In this paper, we have investigated the two-step growth of Ga-catalyzed III-V NWs on Si (111) substrates by molecular-beam epitaxy. First, by optimizing the surface oxide, vertically aligned GaAs NWs with a high yield are obtained at Ts = 620 °C. Then a two-temperature procedure is adopted to preserve Ga droplets at lower Ts, which leads to an extension of Ts down to 500 °C for GaAs NWs. Based on this procedure, systematic morphological and structural studies for Ga-catalyzed GaAs NWs in the largest Ts range could be presented. Then within the same growth scheme, for the first time, we demonstrate Ga-catalyzed GaAs/GaSb heterostructure NWs. These GaSb NWs are axially grown on the GaAs NW sections and are pure zinc-blende single crystals. Compositional measurements confirm that the catalyst particles indeed mainly consist of Ga and GaSb sections are of high purity but with a minor composition of As. In the end, we present GaAsSb NW growth with a tunable Sb composition. Our results provide useful information for the controllable synthesis of multi-compositional Ga-catalyzed III-V semiconductor NWs on Si for heterogeneous integration.

GaAsSb/InAs Core-Shell Nanowires Grown by Molecular-Beam Epitaxy

Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

InAs/GaSb Core-Shell Nanowires Grown on Si Substrates by Metal-Organic Chemical Vapor Deposition

Formation of GaAs/GaSb Core-Shell Heterostructured Nanowires Grown by Molecular-Beam Epitaxy

Growth of High-Quality Self-Catalyzed Core-Shell Gaasp Nanowires on Si Substrates

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Self-catalyzed ternary core-shell GaAsP nanowire arrays grown on patterned Si substrates by molecular beam epitaxy.

Growth of Au-assisted GaAs/AlGaAs Core-Shell Nanowires by Metalorganic Chemical Vapor Deposition

Defect-Free GaAs/AlGaAs Core–Shell Nanowires on Si Substrates

The Self-Catalyzed Growth of GaAsSb Nanowires on a Si (111) Substrate Using Molecular-Beam Epitaxy

Self-Catalyzed Gaasp Nanowires Grown On Silicon Substrates By Solid-Source Molecular Beam Epitaxy

Optical Characterisation Of Catalyst Free Gaasp And Gaasp Core-Shell Nanowires Grown Directly On Si Substrates By Mbe

Structural and Optical Characterization of Vertical GaAs/GaP Core-Shell Nanowires Grown on Si Substrates

Self-induced Antimony Compositional Variation GaAs/Ga(As)Sb Core-Shell Nanowires by Molecular Beam Epitaxy

Growth and Electrical Characterization of Hybrid Core/Shell InAs/CdSe Nanowires

3D Atomic-Scale Insights into Anisotropic Core-Shell-Structured InGaAs Nanowires Grown by Metal-Organic Chemical Vapor Deposition.

New Growth Mechanism of InAs-GaSb Core-Shell Nanowires with Polygonal Triangular Pyramids and Quantum Dots Grown by MOCVD

Two-Step Fabrication of Self-Catalyzed Ga-Based Semiconductor Nanowires on Si by Molecular-Beam Epitaxy

All Zinc-Blende Gaas/(Ga,Mn)As Core-Shell Nanowires with Ferromagnetic Ordering

All-wurtzite (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy