Abstract:Self-catalyzed AlGaAs nanowires (NWs) and NWs with a GaAs quantum dot (QD) were monolithically grown on Si(111) substrates via solid-source molecular beam epitaxy. This growth technique is advantageous in comparison to the previously employed Au-catalyzed approach, as it removes Au contamination issues and renders the structures compatible with complementary metal-oxide-semiconductor (CMOS) technology applications. Structural studies reveal the self-formation of an Al-rich AlGaAs shell, thicker at the NW base and thinning towards the tip, with the opposite behavior observed for the NW core. Wide alloy fluctuations in the shell region are also noticed. AlGaAs NW structures with nominal Al contents of 10, 20, and 30% have strong room temperature photoluminescence, with emission in the range of 1.50-1.72 eV. Individual NWs with an embedded 4.9 nm-thick GaAs region exhibit clear QD behavior, with spatially localized emission, both exciton and biexciton recombination lines, and an exciton line width of 490 μeV at low temperature. Our results demonstrate the properties and behavior of the AlGaAs NWs and AlGaAs/GaAs NWQDs grown via the self-catalyzed approach for the first time and exhibit their potential for a range of novel applications, including nanolasers and single-photon sources.

Growth of Au-assisted GaAs/AlGaAs Core-Shell Nanowires by Metalorganic Chemical Vapor Deposition

Growth and Characterization of GaAs/AlGaAs Core-Multishell Nanowires by Metalorganic Chemical Vapor Deposition

Growth of Zinc Blende Gaas/Algaas Radial Heterostructure Nanowires by A Two-Temperature Process

Growth of Pure Zinc-Blende Gaas(P) Core-Shell Nanowires with Highly Regular Morphology

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

GaAsSb/InAs Core-Shell Nanowires Grown by Molecular-Beam Epitaxy

Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires

Defect-Free GaAs/AlGaAs Core–Shell Nanowires on Si Substrates

Formation of GaAs/GaSb Core-Shell Heterostructured Nanowires Grown by Molecular-Beam Epitaxy

Growth of High-Quality Self-Catalyzed Core-Shell Gaasp Nanowires on Si Substrates

Self-catalyzed ternary core-shell GaAsP nanowire arrays grown on patterned Si substrates by molecular beam epitaxy.

Fabrication of ZnO/Al2O3 core–shell nanostructures and crystalline Al2O3 nanotube

Growth and characterization of GaAs 1−x Sb x nanowires

Stacking-Faults-Free Zinc Blende Gaas/Algaas Axial Heterostructure Nanowires During Vapor-Liquid-Solid Growth

Effect of growth temperature on GaAs nanowires formed by Au-assisted MOCVD

<110>-growth orientation dependence of Ga<sub>2</sub>O<sub>3</sub> nanowires on Cu<sub>3</sub>As seeds via vapor-solid-solid mechanism

All Zinc-Blende Gaas/(Ga,Mn)As Core-Shell Nanowires with Ferromagnetic Ordering

Growth of N-Doped GaAs Nanowires by Au-assisted Metalorganic Chemical Vapor Deposition: Effect of Flux Rates of N-Type Dopants

Self-Catalyzed Gaasp Nanowires Grown On Silicon Substrates By Solid-Source Molecular Beam Epitaxy

Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates

Facile Synthesis and Growth Mechanism of Ni-catalyzed GaAs Nanowires on Non-Crystalline Substrates