Abstract:With the continuous improvement of the power density and operating frequency in power conversion systems, it is necessary to develop the new power electronic products with better performances than the conventional semiconductors. As a typical representative of the wide-bandgap semiconductors, gallium nitride (GaN)-based heterostructure has unique high-density two-dimensional electron gas (2DEG) and hence can be used to fabricate the fast high electron mobility transistors (HEMTs) with low power loss. Therefore, they are considered as a promising candidate for the next-generation power devices to improve the switching efficiency and speed. Compared with the depletion mode (D-mode, also known as normally-on) devices, the enhancement-mode (E-mode, also known as normally-off) devices have the advantages of safety, energy-saving, and better circuit topology design, making them more attractive for industry applications. In this paper, the different structure schemes and fabrication technologies of the GaN-based E-mode HEMTs are reviewed and summarized. Their technical characteristics are systematically compared. The influences of material epitaxial structure, ohmic contact, material etching, field plate design, and passivation process on the device performances are discussed in detail wherein the fabrication process of the recessed-gate MIS-HEMTs are emphatically illustrated, focusing on the interface treatment technology and dielectric engineering. In addition, the complicated reliability issues and physical mechanisms in the E-mode HEMTs induced by high temperature, high voltage, and high frequency switching are introduced and discussed. Finally, the potential technical solutions are proposed and the future application fields of GaN-based E-mode HEMTs are prospected.

Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability*

High-voltage Trench-Gate Hole-Gas Enhancement-Mode HEMT with Multi-Conduction Channels

An improved design for e-mode AlGaN/GaN HEMT with gate stack β-Ga2O3/p-GaN structure

Enhancement-mode GaN HEMT using a combination structure of recessed-gate and p-GaN gate structure

High Performance Enhancement-Mode HEMT with 3DEG to Conduct Current and 3DHG As Back Barrier

An Improved Design for E-Mode AlGaN/GaN HEMT with Gate Stack -Ga2o3/p-gan Structure

High Performance Flip-Structure Enhancement-Mode HEMT with Face-to-Face Double Gates

Investigation of high threshold voltage E-mode AlGaN/GaN MIS-HEMT with triple barrier layer

Improving Gate Reliability of 6-in E-Mode GaN-Based MIS-HEMTs by Employing Mixed Oxygen and Fluorine Plasma Treatment

Simulation and analysis of enhancement-mode AlGaN/GaN HEMT with P-I-N junction gate

Improved Current Collapse in Recessed AlGaN/GaN MOS-HEMTs by Interface and Structure Engineering

Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using a Nano-Channel Array Structure

Progress of GaN-Based E-mode HEMTs

Normally-OFF AlGaN/GaN-based HEMTs with Decreasingly Graded AlGaN Cap Layer

A High-Performance GaN E-mode Reverse Blocking MISHEMT with MIS Field Effect Drain for Bidirectional Switch

Enhancement-Mode HEMT Performance and Mitigating Delay Through Double-Heterojunction With Connect Channel Utilization for Trap Effect Reduction

High Performance Enhancement-Mode Algan/Gan Mis-Hemt with Selective Fluorine Treatment

Enhancement-Mode Gan Double-Channel Mos-Hemt with Low On-Resistance and Robust Gate Recess

A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances

Simulation Design of a High-Breakdown-voltage P-Gan-gate GaN HEMT with a Hybrid AlGaN Buffer Layer for Power Electronics Applications

Simulation of a High-Performance Enhancement-Mode HFET with Back-to-back Graded AlGaN Layers