Abstract:A finite Schottky barrier and large contact resistance between monolayer MoS2 and electrodes are the major bottlenecks in developing high-performance field-effect transistors (FETs) that hinder the study of intrinsic quantum behaviors such as valley-spin transport at low temperature. A gate-tunable graphene electrode platform has been developed to improve the performance of MoS2 FETs. However, intrinsic misalignment between the work function of pristine graphene and the conduction band of MoS2 results in a large threshold voltage for the FETs, because of which Ohmic contact behaviors are observed only at very high gate voltages and carrier concentrations (~1013 cm-2). Here, we present high-performance monolayer MoS2 FETs with Ohmic contact at a modest gate voltage by using a chemical-vapor-deposited (CVD) nitrogen-doped graphene with a high intrinsic electron carrier density. The CVD nitrogen-doped graphene and monolayer MoS2 hybrid FETs platform exhibited a large negative shifted threshold voltage of -54.2 V and barrier-free Ohmic contact under zero gate voltage. Transparent contact by nitrogen-doped graphene led to a 214% enhancement in the on-current and a four-fold improvement in the field-effect carrier mobility of monolayer MoS2 FETs compared with those of a pristine graphene electrode platform. The transport measurements, as well as Raman and X-ray photoelectron spectroscopy analyses before and after thermal annealing, reveal that the atomic C-N bonding in the CVD nitrogen-doped graphene is responsible for the dominant effects of electron doping. Large-scale nitrogen-doped graphene electrodes provide a promising device platform for the development of high-performance devices and the study of unique quantum behaviors.

Performance Evaluation and Optimization of Single Layer MoS2Double Gate Transistors with Schottky Barrier Contacts

Device simulation study of multilayer MoS 2 Schottky barrier field-effect transistors

Quantum Transport Simulation of Sub-1-nm Gate Length Monolayer MoS2 Transistors

First-Principles-Based Quantum Transport Simulations of High- Performance and Low-Power MOSFETs Based on Monolayer Ga2O3

Probing the Field-Effect Transistor with Monolayer MoS2 Prepared by APCVD

Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: an Insight into Current Flow across Schottky Barriers

A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

Reexamination of the Schottky Barrier Heights in Monolayer MoS2 Field-Effect Transistors

The Insight and Evaluation of Ultra-Scaled Sub-1 Nm Gate Length Transistors

Sub-5 Nm Monolayer MoS2 Transistors Toward Low-Power Devices

High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact

Statistical Study of Deep Sub-Micron Dual-Gated Field-Effect Transistors on Monolayer CVD Molybdenum Disulfide Films

Electrical Contacts in Monolayer MoSi2N4 Transistors

Numerical study on Schottky-barrier double-gate MOS transistor with recessed channel and asymmetric contact

Performance Upper Limit of sub-10 nm Monolayer MoS2 Transistors

Low Sub-Threshold Swing Realization with Contacts of Graphene/h-Bn/mos2 Heterostructures in MoS2 Transistors

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

Approaching Ohmic Contacts for Ideal Monolayer MoS2 Transistors Through Sulfur-Vacancy Engineering

MoS2 Dual-Gate Transistors with Electrostatically Doped Contacts

MoS$_2$ Dual-gate Transistors with Electrostatically Doped Contacts