Abstract:Organic field-effect transistor (OFET) memory has received widespread attention due to its easy integration, precise charge modulation, and multi-level memory. However, the performance of organic memory still needs to be improved for its practical application, and the reported technologies are strongly dependent on an additional charge-trapping layer, which increases the complexity of the device. Here, we report a heterostructured vertical organic memory transistor, which uses a p/n semiconductor bulk heterojunction as a semiconductor layer without using any additional charge-trapping layers. The device exhibits a large memory window of 52 V, and the memory ratio reaches 105 through electrical operation. Benefiting from the formation of the p/n semiconductor interface and the nanometer-scale transmission length, under the stimulation of visible light, the device achieved a 58 V memory window, high memory ratio 105, and retention characteristics of over 10 years, which is better than those of most reported optical organic memory devices. More interestingly, we found that as the level of the doping in the n-type semiconductor increased, the device could transform from nonvolatile memory to artificial synapse, which is associated with the morphology of a heterojunction structure. Hence, we demonstrate a novel technique to manufacture high-performance nonvolatile optoelectronic memory and artificial synapse, which shows great potential in OFET-based memory and neuromorphic devices.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsphotonics.1c01167.Thickness of the mixed film (Figure S1); topography of Ag nanowire source (0.5 mg/mL) (Figure S2); memory window of the memory at different mixing ratios (Figure S3); 500-cycle double-swept transfer curve of the vertical transistor (Figure S4); transfer curve of 115 doped (3%) organic vertical transistors (Figure S5); surface roughness of the blending film with different doping ratios (Figure S6); endurance and retention characteristics of the device (Figure S7); transfer curve of undoped device under electrical/optical operation (Figure S8); memory window of the planar memory (Figure S9); transfer curve of optoelectronic memory with different doping ratios (Figure S10); UV–vis absorption of PDVT-10 film, N2200 film, and mixing film with doping 3% N2200 (Figure S11); molecular structure of PDVT-10, DPP-DTT, IDTBT, and N2200 (Figure S12); memory window of memory devices based on different blending systems (Figure S13); transfer curves of different semiconductor (Figure S14); potential distribution and the charge concentration distribution of the device under different operating conditions (Figures S15–S18); capacitance of doped film (3%) and undoped film (Figure S19); KPFM image of the doping film (Figures S20 and S21); PSC of the device (Figure S22); dependence of PPF and PPD ratio of the device and on various pulse intervals (Figure S23); surface potential of mixed thin films with different doping concentrations (Figure S24); Transfer curve and retention of devices with 50% doping concentration (Figure S25); comparison of organic field-effect memory characteristics based on different mechanisms (Table S1) (PDF)This article has not yet been cited by other publications.

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