Abstract:On-chip optical waveguides with low propagation losses and precisely engineered group velocity dispersion (GVD) are important to nonlinear photonic devices such as soliton microcombs. Yet, despite intensive research efforts, nonlinear integrated photonic platforms still feature propagation losses orders of magnitude higher than in standard optical fiber. The tight confinement and high index contrast of integrated waveguides make them highly susceptible to fabrication induced surface roughness. Therefore, microresonators with ultra-high Q factors are, to date, only attainable in polished bulk crystalline, or chemically etched silica based devices, that pose however challenges for full photonic integration. Here, we demonstrate the fabrication of silicon nitride ($\mathrm{Si_3N_4}$) waveguides with unprecedentedly smooth sidewalls and tight confinement with record low propagation losses. This is achieved by combining the photonic Damascene process with a novel reflow process, which reduces etching roughness, while sufficiently preserving dimensional accuracy. This leads to previously unattainable \emph{mean} microresonator Q factors larger than $5\times10^6$ for tightly confining waveguides with anomalous dispersion. Via systematic process step variation and two independent characterization techniques we differentiate the scattering and absorption loss contributions, and reveal metal impurity related absorption to be an important loss origin. Although such impurities are known to limit optical fibers, this is the first time they are identified, and play a tangible role, in absorption of integrated microresonators. Taken together, our work provides new insights in the origins of propagation losses in $\mathrm{Si_3N_4}$ waveguides and provides the technological basis for integrated nonlinear photonics in the ultra-high Q regime.

Sidewall roughness in Si 3 N 4 waveguides directly measured by atomic force microscopy

Point Diffraction Interferometer Based on a Silicon Nitride Waveguide Spherical Wave Source

Reference Wave Source Based on Silicon Nitride Waveguide in Point Diffraction Interferometer

Surface Profile Measurement of Micro-Optics by Using a Long Stroke Atomic Force Microscope

Direct Measurement of Sidewall Roughness on Si, Poly-Si and Poly-Sige by AFM

Nanometer Scale Roughness Measurements with Atomic Force Microscopes

Fabrication of Si/Si1-Xgex Waveguide Wdm Components

Measurement of Sub-Surface Microstructures Based on a Developed Ultrasonic Atomic Force Microscopy

Influence of Etching Parameters on Sidewall Roughness of Silicon Based Waveguide Etched by Inductively Coupled Plasma

Direct Measurement of Plowing Friction and Wear of a Polymer Thin Film Using the Atomic Force Microscope

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Rapid Measurement Of A High Step Microstructure With 90 Degrees Steep Sidewall

Mechanical dicing of optical quality facets and waveguides in a silicon nitride platform

Characterization of randomly rough surfaces using angle-resolved scattering of light and atomic force microscopy

Optical characterization of deuterated silicon-rich nitride waveguides

A general strategy for polishing SiC wafers to atomic smoothness with arbitrary facets

Optical and geometric parameter extraction across 300-mm photonic integrated circuit wafers

XPS and AFM study of chemical mechanical polishing of silicon nitride

Challenges in the areal measurement of surface roughness and shape at the micro and nanoscale

Probing the loss origins of ultra-smooth $\mathrm{Si_3N_4}$ integrated photonic waveguides

Lithium niobate ridged waveguides with smooth vertical sidewalls fabricated by an ultra-precision cutting method