Abstract:Fe doped phase change material Ge x Sb y Te z has shown experimentally the ability to alter its magnetic properties by phase change. This engineered spin degree of freedom into the phase change material offers the possibility of logic devices or spintronic devices where they may enable fast manipulation of ferromagnetism by a phase change mechanism. The electronic structures and spin configurations of isolated transition metal dopant in phase change material (iTM-PCM) is important to understand the interaction between localized metal d states and the unique delocalized host states of phase change material. Identifying an impurity center that has, in isolation, a nonvanishing magnetic moment is the first step to study the collective magnetic ordering, which originates from the interaction among close enough individual impurities. Theoretical description of iTM-PCM is challenging. In this work, we use a screened exchange hybrid functional to study the single 3d transition metal impurity in crystalline GeTe and GeSb 2 Te 4 . By curing the problem of local density functional (LDA) such as over-delocalization of the 3d states, we find that Fe on the Ge/Sb site has its majority d states fully occupied while its minority d states are empty, which is different from the previously predicted electronic configuration by LDA. From early transition metal Cr to heavier Ni, the majority 3d states are gradually populated until fully occupied and then the minority 3d states begin to be filled. Interpretive orbital interaction pictures are presented for understanding the local and total magnetic moments.

Microstructure and Magnetic Behavior of Mn Doped GeTe Chalcogenide Semiconductors Based Phase Change Materials

Ferromagnetism Modulation by Phase Change in Mn-doped GeTe Chalcogenide Magnetic Materials

Thickness Dependence and Magnetization Behavior of Mn-Doped Gete Phase Change Materials

Investigation of thermal stability and crystallization mechanism of Er-0.03(GeTe)(0.97) phase change material

Phase-Change Characteristics and Thermal Stability of GeTe/Sb<sub>2</sub>Te<sub>3</sub>Nanocomposite Multilayer Films

Investigation of thermal stability and crystallization mechanism of Er<sub>0.03</sub>(GeTe)<sub>0.97</sub> phase change material

Ab initio investigation of layered TMGeTe3 alloys for phase-change applications

Phase-Change Characteristics And Thermal Stability Of Gete/Sb2te3 Nanocomposite Multilayer Films

Investigation of GeTe/Ge2Sb2Te5 Nanocomposite Multilayer Films for Phase-Change Memory Applications

Ab Initio Investigation of Crystalline and Amorphous Gete Doped with Magnetic Impurities

Study of transition speed and electrical transportation properties of Ge1Sb2Te4 and Ge2Sb2Te5 chalcogenide phase-change materials

Phase Transition Behaviors and Thermal Conductivity of Ge Doped Sb<sub>2</sub>Te Thin Films for Phase Change Random Access Memory

Nanomechanical morphology of amorphous, transition, and crystalline domains in phase change memory thin films

Change in Structure of Amorphous Sb–Te Phase‐Change Materials as a Function of Stoichiometry

Crystallization behavior of MnTe/GeTe stacked thin films for multi-level phase change memory

Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon

In-situ Heating TEM Study of Phase Change Material

Electronic Structure and Spin Configuration Trends of Single Transition Metal Impurity in Phase Change Material

First-principles Study of Magnetic Interactions in 3 D Transition Metal-Doped Phase-Change Materials

Study of Structural and Electrical Properties of Phase-Change Materials Ge1Sb2Te4 and Ge2Sb2Te5 Thin Films

Atomic Structure and Dynamics of Unusual and Wide‐Gap Phase‐Change Chalcogenides: A GeTe2 Case