Hong Zhu, Geoffroy Hautier, Umut Aydemir, Zachary M Gibbs, Guodong Li, Saurabh Bajaj, Jan-Hendrik Pöhls, Danny Broberg, Wei Chen, Anubhav Jain, Mary Anne White, Mark Asta, G Jeffrey Snyder, Kristin Persson, Gerbrand Ceder

Abstract:A new group of thermoelectric materials, trigonal and tetragonal XYZ2 (X, Y: rare earth or transition metals, Z: group VI elements), the prototype of which is TmAgTe2, is identified by means of high-throughput computational screening and experiment. Based on density functional theory calculations, this group of materials is predicted to attain high zT (i.e. ∼1.8 for p-type trigonal TmAgTe2 at 600 K). Among approximately 500 chemical variants of XYZ2 explored, many candidates with good stability and favorable electronic band structures (with high band degeneracy leading to high power factor) are presented. Trigonal TmAgTe2 has been synthesized and exhibits an extremely low measured thermal conductivity of 0.2–0.3 W m−1 K−1 for T > 600 K. The zT value achieved thus far for p-type trigonal TmAgTe2 is approximately 0.35, and is limited by a low hole concentration (∼1017 cm−3 at room temperature). Defect …

Erratum: Computational and experimental investigation of TmAgTe2 and: XYZ 2 compounds, a new group of thermoelectric materials identified by first-principles high-throughput screening (Journal of Materials Chemistry C (2015) 3 (10554-10565))

Correction: Computational and experimental investigation of TmAgTe2 and XYZ2 compounds, a new group of thermoelectric materials identified by first-principles high-throughput screening

Computational and Experimental Investigation of TmAgTe2and XYZ2compounds, a New Group of Thermoelectric Materials Identified by First-Principles High-Throughput Screening

Computational and experimental investigation of TmAgTe 2 and XYZ 2 compounds, a new group of thermoelectric materials identified by first-principles high-throughput screening

Corrections to “zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors” [nov 08 3001-3011

Correction: High thermoelectric performance of a defect in α-In2Se3-based solid solution upon substitution of Zn for In

Correction: Computer-aided Design of High-Efficiency GeTe-based Thermoelectric Devices

Correction: Erratum: Materials discovery at high pressures

Correction: High-pressure structural phase transition and metallization in Ga2S3 under non-hydrostatic and hydrostatic conditions up to 36.4 GPa

Erratum: Intrinsic and Extrinsic Charge Transport in CH3NH3PbI3 Perovskites Predicted from First-Principles

Erratum: Thermal analysis of injectable, cellular scale optoelectronics with pulsed power (Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences …

Erratum: Ultrathin conformal devices for precise and continuous thermal characterization of human skin

Correction: Two-dimensional Polar Metal of a PbTe Monolayer by Electrostatic Doping.

Correction: Corrigendum: Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials

Correction: Direct ink writing of high-performance Bi2Te3-based thermoelectric materials using quasi-inorganic inks and interface engineering

Correction: Structural, electronic, optical, elastic, thermodynamic and thermal transport properties of Cs 2 AgInCl 6 and Cs 2 AgSbCl 6 double perovskite semiconductors using a first-principles study

Publisher’s Note: Physical Properties of Thermoelectric Zinc Antimonide Using First-Principles Calculations [phys. Rev. B85, 224105 (2012)]

Erratum: Corrigendum: Kinetic ways of tailoring phases in high entropy alloys

Correction: Corrigendum: Kinetic Ways of Tailoring Phases in High Entropy Alloys

Correction: Molecular-scale Thermoelectricity: As Simple As ‘ABC’

Correction: Corrigendum: Hinge-like Structure Induced Unusual Properties of Black Phosphorus and New Strategies to Improve the Thermoelectric Performance