Abstract:Defects engineering is an effective approach to improve thermoelectric performance of thermoelectric materials. In this work, a simple strategy has been developed to introduce large scale defects of Se2- enrichment in the Te2--based anionic framework of AgCuTe-based thermoelectric materials. As a consequence, the structure of anionic Se2-/Te2--based framework is modified and its electrical transport properties are largely affected. It is observed that the carrier concentration is reduced because the Se2- enrichment hinders the formation of cation vacancies, leading to the decreasing of electric conductivity and the increasing of Seebeck coefficient in high temperature range. Significantly, the electron thermal conductivity decreases to an extremely low level due to the further reduction in carrier concentration. As a result, the Se-rich AgCuTe sample achieves a maximum ZT value of 1.2 at 723 K, which is about 20% higher than that of the pristine AgCuTe sample. The results evidence that optimizing the anionic framework is an effective approach to improve the thermoelectric properties of AgCuTe and is expected to be a universal modification strategy to enhance the thermoelectric performance of other Ag/Cu-based superionic conductor materials.

Correction: High thermoelectric performance of a defect in α-In2Se3-based solid solution upon substitution of Zn for In

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Erratum: Computational and experimental investigation of TmAgTe2 and: XYZ 2 compounds, a new group of thermoelectric materials identified by first-principles high-throughput screening (Journal of Materials Chemistry C (2015) 3 (10554-10565))

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Enhanced Thermoelectric Performance Through Optimizing Structure of Anionic Framework in AgCuTe-based Materials

Computational and Experimental Investigation of TmAgTe2and XYZ2compounds, a New Group of Thermoelectric Materials Identified by First-Principles High-Throughput Screening

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