Abstract:Single-crystal transition metal dichalcogenides (TMDs) and TMD-based heterojunctions have recently attracted significant research and industrial interest owing to their intriguing optical and electrical properties. However, the lack of a simple, low-cost, environmentally friendly, synthetic method and a poor understanding of the growth mechanism post a huge challenge to implementing TMDs in practical applications. In this work, we developed a novel approach for direct formation of high-quality, monolayer and few-layer MoS2 single crystal domains via a single-step rapid thermal processing of a sandwiched reactor with sulfur and molybdenum (Mo) film in a confined reaction space. An all-solid-phase growth mechanism was proposed and experimentally/theoretically evidenced by analyzing the surface potential and morphology mapping. Compared with the conventional chemical vapor deposition approaches, our method involves no complicated gas-phase reactant transfer or reactions and requires very small amount of solid precursors [e.g., Mo (∼3 μg)], no carrier gas, no pretreatment of the precursor, no complex equipment design, thereby facilitating a simple, low-cost, and environmentally friendly growth. Moreover, we examined the symmetry, defects, and stacking phase in as-grown MoS2 samples using simultaneous second-harmonic-/sum-frequency-generation (SHG/SFG) imaging. For the first time, we observed that the SFG (peak intensity/position) polarization can be used as a sensitive probe to identify the orientation of TMDs' crystallographic axes. Furthermore, we fabricated ferroelectric programmable Schottky junction devices via local domain patterning using the as-grown, single-crystal monolayer MoS2, revealing their great potential in logic and optoelectronic applications. Our strategy thus provides a simple, low-cost, and scalable path toward a wide variety of TMD single crystal growth and novel functional device design.

Epitaxial Growth and Intrinsic Nature of Molybdenum Disulfide on Graphite

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Edge Reconstruction-Dependent Growth Kinetics of MoS2

All Chemical Vapor Deposition Synthesis and Intrinsic Bandgap Observation of Mos2/Graphene Heterostructures

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Epitaxial Monolayer MoS2 on Mica with Novel Photoluminescence.

Monolayer MoS2 Dendrites on a Symmetry‐Disparate SrTiO3 (001) Substrate: Formation Mechanism and Interface Interaction

Epitaxial Growth of Centimeter-Scale Single-Crystal MoS2 Monolayer on Au(111)

Growth of 'W' doped molybdenum disulfide on graphene transferred molybdenum substrate.

Substrate Facet Effect on the Growth of Monolayer MoS2 on Au Foils.

Epitaxy of Wafer-Scale Single-Crystal MoS2 Monolayer Via Buffer Layer Control

Revisiting the Epitaxial Growth Mechanism of 2D TMDC Single Crystals

Controllable Growth Of Monolayer Mos2 By Chemical Vapor Deposition Via Close Moo2 Precursor For Electrical And Optical Applications

Epitaxial Growth of High-Quality Monolayer MoS2 Single Crystals on Low-Symmetry Vicinal Au(101) Facets with Different Miller Indices.

Vapor Phase Growth and Grain Boundary Structure of Molybdenum Disulfide Atomic Layers

Molybdenum Disulphide Nanoflakes Grown by Chemical Vapour Deposition on Graphite: Nucleation, Orientation, and Charge Transfer

Capture the growth kinetics of CVD growth of two-dimensional MoS2

A Facile Space-Confined Solid-Phase Sulfurization Strategy for Growth of High-Quality Ultrathin Molybdenum Disulfide Single Crystals

Effect of Substrate Symmetry on the Orientations of MoS2 Monolayers.

Understanding Substrate Effects on 2D MoS2 Growth: A Kinetic Monte Carlo Approach