Abstract:The development of silicon-based high-power devices, e.g. IGBTs, has reached its application limits in terms of high-temperature and high-frequency harsh operating conditions. Wide bandgap (WBG) power devices (such as silicon carbide, SiC) are currently one of the most promising power devices for replacement. Due to their intrinsic bandgap, SiC high-power devices have proven their superior performance in high-frequency and high-temperature working scenarios. With the increasing demand of high-power semiconductor devices in industries such as new-energy vehicles, high-speed railway systems, and aerospace, the conditions of SiC power semiconductor devices have become more and more complex, which brings challenges to electronic packaging technology. Due to thermal management and reliability requirements for SiC power devices, customized advanced heat dissipation structures, and high-temperature soldering materials have been introduced in power device packaging technology. The reliability verification of these new electronic packaging technologies is often time-consuming and labor-intensive, so designers hope to obtain results consistent with actual experimental data through the utilization of computer-aided design methods, such as finite-element analysis (FEA), which will greatly reduce the number of iterations of physical prototypes and the development time. This article reviewed and discussed the application of FEA in the latest packaging technology, including the extraction of the thermal resistance network of the SiC power module, the thermal simulation of the novel efficient cooling structure, the thermo-mechanical analysis of the high-temperature packaging material, and the long-term reliability FEA of the SiC power devices.

Thermal-mechanical analysis of packaged power amplifiers based on heterogeneous integrations using photosensitive BCB

The Design and Thermal Reliability Analysis of a High-Efficiency K-Band MMIC Medium-Power Amplifier with Multiharmonic Matching

Wafer Level Heterogeneous Integration of a Transceiver Module in Millimeter Wave Using Photosensitive BCB

Study on Electro-Thermo-Mechanical Responses of Bonding Wires Arrays Used for the Package Design of Ldmosfet-Based Rf Amplifier

A New Meshing Criterion for the Equivalent Thermal Analysis of GaAs PHEMT MMICs.

Thermal Analysis of Power MMICs Based on Computerization.

Analysis of Novel Packaging Techniques for High Power Electronics in SiC

Analytical Solutions of Temperature Distributions Based on Fourier Series for Wafer Level Heterogeneous Integrations

Calculations of Temperature Distributions for Power MMICs in 3-D Packages

Thermal Performance And Reliability Management For Novel Power Electronic Packaging Using Integrated Base Plate

A Thermal Network Model for Multichip Power Modules Enabling to Characterize the Thermal Coupling Effects

Integrated Manifold Microchannels and Near-Junction Cooling for Enhanced Thermal Management in 3D Heterogeneous Packaging Technology

Thermal cycling characterization of an integrated low-inductance GaN eHEMT power module

Thermal Characteristic Investigation for a Multichip Module Based on APDL

Design and Analysis of Thermal Performance of a 6 W Solid-State Integrated Power Amplifier at Ka-Band

Package Modeling and Characterization of C-Band 10-Watt High-Power Amplifier Monolithic Microwave Integrated Circuit used in High-Reliability Applications

Thermal Modeling and Analysis of High Power Semiconductor Laser Arrays

Three-dimensional thermal analysis of heterogeneously integrated β -Ga2O3-on-SiC SBDs using Raman thermography and electrothermal modeling

Multi-chip Module Based GaAs MMICs Packaging for L-Band High Gain Application

Overview of Finite-Element Analysis in Simulation of SiC Power Device Packaging

Thermal And Mechanical Analysis of High-power Light-emitting Diodes with Ceramic Packages