Abstract:Field-effect transistors based on conjugated polymers have reached mobilities comparable to those of polysilicon rivals and recently demonstrated self-healing capability, indicating their great potential for use in future plastic electronics. For practical applications, the operating speed of polymer transistors must be increased, which requires not only high mobility but also short channel length. Decreasing channel length is an important engineering issue for high-frequency operation and high-density integration. However, shortening channel length has proved challenging because of the poor compatibility of conjugated polymer transistors with conventional lithography; i.e., fragile polymer semiconductor films may be damaged during lithographic processes. The underlying device physics, particularly of those with short channels, remain poorly understood. Here, we fabricated polymer transistors with channel lengths below 1000 nm. A dry self-patterning process lowered the gate leakage current to less than 10–12 A, enabling quantitative analysis of devices with very short channels. We found that a high Schottky barrier with a sizable space-charge region (>1 μm) was responsible for the high off-state current because the space-charge zones at the source and drain joined when the channel was short, lowering the energy barrier to carrier diffusion in the off state. Such diffusion was suppressed simply by controlling the molecular alignment so that the deep traps distributed at the domain boundaries limited the carrier diffusion and thus suppressed the off-state current.

Gate-voltage-dependent Charge Transport in Multi-Dispersed Polymer Thin Films

Characterization of the Charge Transport and Electrical Properties in Solution-Processed Semiconducting Polymers

Field-Effect Charge Transport in Doped Polymer Semiconductor-Insulator Alternating Bulk Junctions with Ultrathin Transport Layers

Exploring the Charge Transport in Conjugated Polymers

Field-effect bulk mobilities in polymer semiconductor films measured by sourcemeters

Unification of the Charge Transport in Field-Effect Transistors and Light-Emitting Diodes Based on Organic Semiconductors

A Tied Fermi Liquid to Luttinger Liquid Model for Nonlinear Transport in Conducting Polymers

A tied Fermi liquid to Luttinger liquid model for the explanation of nonlinear transport in conducting polymers

Chain-Assisted Charge Transport in Semicrystalline Conjugated Polymers

Film-Depth-Dependent Charge Mobilities in Organic Semiconductor Films

Modelling the Threshold-Voltage Shift of Polymer Thin-Film Transistors under Constant and Variable Gate-Bias Stresses

Anisotropic Charge-Carrier Transport in High-Mobility Donor-Acceptor Conjugated Polymer Semiconductor Films.

Detailed Calculation And Analysis Of Electrical Properties In Solution-Processed Polymer Semiconducting Layers

Characterization of charge transport and electrical properties in disordered organic semiconductors

Correlating Charge Transport Properties of Conjugated Polymers in Solution Aggregates and Thin‐Film Aggregates

Impact of crystallinity and grain density on the charge-carrier distribution and transport in organic semiconductors

Suppressing off -state current via molecular orientation in submicrometer polymer field-effect transistors

Manipulating Transistor Operation Via Nonuniformly Distributed Charges in A Polymer Insulating Electret Layer

Transport of carriers in a semiconductor polymer random chain: A renormalization approach

Two-dimensional charge transport in self-organized, high-mobility conjugated polymers

Non-equilibrium transport in polymer mixed ionic–electronic conductors at ultrahigh charge densities