High Speed Silicon Photonic Modulators

Xi Xiao,Miaofeng Li,Lei Wang,Daigao Chen,Qi Yang,Shaohua Yu

DOI: https://doi.org/10.1364/ofc.2017.tu2h.1

2017-01-01

Abstract:We review the progress on high speed silicon photonic modulators based on dispersion plasma effect. We present the demonstrations of silicon-based 90 Gbaud intensity modulator, 100G CWDM4 transmitter, I-Q modulator and optical frequency comb generator.

What problem does this paper attempt to address?

High-speed Silicon Modulators for the 2 Μm Wavelength Band

Wei Cao,David Hagan,David J. Thomson,Milos Nedeljkovic,Callum G. Littlejohns,Andy Knights,Shaif-Ul Alam,Junjia Wang,Frederic Gardes,Weiwei Zhang,Shenghao Liu,Ke Li,Mohamed Said Rouifed,Guo Xin,Wanjun Wang,Hong Wang,Graham T. Reed,Goran Z. Mashanovich

DOI: https://doi.org/10.1364/optica.5.001055

IF: 10.4

2018-01-01

Optica

Abstract:The 2 mu m wavelength band has become a promising candidate to be the next communication window. We demonstrate high-speed modulators based on a 220 nm silicon-on-insulator platform working at a wavelength of 1950 nm, using the free carrier plasma dispersion effect in silicon. A Mach-Zehnder interferometer modulator and a microring modulator have been characterized. At 1950 nm, the carrier-depletion modulator operates at a data rate of 20 Gbit/s with an extinction ratio of 5.8 dB and insertion loss of 13 dB. The modulation efficiency (V-pi (.) L-pi) is 2.68 V(.)cm at 4 V reverse bias. The device operation is broadband, and we also characterize its performance at 1550 nm. At 1550 nm, an open eye is obtained at 30 Gbit/s. The difference in bandwidth is caused by the bandwidth limit of the 2 mu m measurement setup. We also show a ring modulator paired with a low power integrated driver working in hybrid carrier depletion and injection mode at a data rate of 3 Gbit/s with power consumption of 2.38 pJ/bit in the 2 mu m wavelength range. This work is a proof of principle demonstration and paves a route toward a full silicon-based transceiver in the 2 mu m window. Published by The Optical Society under the terms of the Creative Commons Attribution 4.0 License.
High-Baudrate Silicon Photonics Ring Resonator and Mach-Zehnder Modulators for Short-Reach Applications

Oskars Ozolins,Armands Ostrovskis,Michael Koenigsmann,Toms Salgals,Benjamin Krüger,Fabio Pittalà,Ryan P. Scott,Hansjoerg Haisch,Hadrien Louchet,Aleksandrs Marinins,Sandis Spolitis,Jurgis Porins,Lu Zhang,Richard Schatz,Xianbin Yu,Vjaceslavs Bobrovs,Markus Gruen,Xiaodan Pang

DOI: https://doi.org/10.1109/icton59386.2023.10207236

2023-01-01

Abstract:Silicon photonics (SiP) is a key enabling technology for high-baudrate communication. It is a key technology for future 800 Gbps and 1.6 Tbps solutions to meet the ever-increasing demands. The 800G pluggable multi-source agreement (MSA) suggests that intensity-modulated direct-detection (IM/DD) is the most sustainable way forward [1]. The high operational bandwidth of each transceiver component is essential. An ultra-compact SiP slow light modulator with record-high bandwidth of 110 GHz shows the potential [2]. Therefore, both multilevel pulse amplitude modulation (PAM) and on-off keying (OOK) should be considered. SiP offers excellent production yield and has a substantial role in optical interconnects. SiP ring resonator modulators (RRM) have unique advantages like a small footprint, simple driver configuration, low power consumption, and suitability for multichannel applications. On the other hand, the SiP Mach-Zehnder modulator (MZM) offers differential drive benefits.
High-Baudrate SiP and InP Modulators for Data Center Interconnects

Oskars Ozolins,Armands Ostrovskis,Toms Salgals,Benjamin Krüger,Fabio Pittalà,Mahdieh Joharifar,Richard Schatz,Michael Koenigsmann,Yuchuan Fan,Urban Westergren,Haïk Mardoyan,Lu Zhang,Sandis Spolitis,Xianbin Yu,Markus Gruen,Vjaceslavs Bobrovs,Hadrien Louchet,Xiaodan Pang

DOI: https://doi.org/10.23919/softcom58365.2023.10271574

2023-01-01

Abstract:The booming internet traffic sets highly challenging requirements for high-speed computing where low latency is required. This leads to a choice of intensity modulation and direct detection system with the highest baudrate possible. Furthermore, record baudrate supporting modulators will be the key technology for future optical interconnect applications. Therefore, we demonstrated silicon photonics and indium phosphide modulators at highest possible sysmbolrate.
Recent Progress on Ultrahigh Speed Optical Modulator

MH Wang,X Zhao

DOI: https://doi.org/10.1117/12.402723

2000-01-01

Abstract:This paper reviews recent progress and the future prospects for ultrahigh speed optical modulator. In particular, details are provided on GaAs/AlGaAs traveling-wave modulators using doped epitaxial layers.
30 Gbps high optical bandwidth silicon modulator

Hao Xu,Xianyao Li,Xi Xiao,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1109/Group4.2013.6644431

2013-01-01

Abstract:We report a high speed silicon modulator with a 3 dB optical bandwidth of 39 nm. 30 Gbps electro-optical modulations were experimentally demonstrated with a low driving voltage of 3 V.
60 Gbit/s Silicon Modulators with Enhanced Electro-Optical Efficiency

Xi Xiao,Hao Xu,Xianyao Li,Zhiyong Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1364/ofc.2013.ow4j.3

2013-01-01

Abstract:We present 60 Gbit/s silicon MZI and microring modulators with the PN junctions and electrodes designed for improved modulation efficiency and high speed. WDM modulations of 4×50 Gbit/s have also been demonstrated based on microring modulators.
High Baud Rate Transmission with Silicon Photonic Modulators

Fan Zhang,Lei Zhang,Xiaoke Ruan,Fan Yang,Hao Ming,Yanping Li

DOI: https://doi.org/10.1109/jstqe.2021.3055582

IF: 4.9

2021-01-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:We review high baud rate operation of silicon photonic modulators with emphasis on short-reach and metro-haul applications. The current status of both devices and digital signal processing are discussed. The basic design of a typical carrier-depletion-based dual-drive traveling-wave Mach-Zehnder modulator (TW-MZM) is studied by simulation. Based on an all-silicon TW-MZM, we report the transmission experiments of high baud rate single sideband 4-ary pulse amplitude modulation (PAM-4) signals with linear equalization and artificial neural network based equalization, respectively. Our work indicates all-silicon modulators can address the requirements of future optical communication systems operating at 100 Gbaud.
Development of Silicon Photonic Devices for Optical Interconnects

Xi Xiao,ZhiYong Li,Tao Chu,Hao Xu,XianYao Li,Anastasia Nemkova,Xiong Kang,YuDe Yu,JinZhong Yu

DOI: https://doi.org/10.1007/s11431-012-5120-2

2013-01-01

Science China Technological Sciences

Abstract:Silicon photonic devices based on complementary-metal-oxide-semiconductor (CMOS) compatible technologies have shown attractive performances on very-large-scale monolithic optoelectronic integration, high speed modulation and switching, and efficient off-chip optical coupling. This paper presents the recent progress on fast silicon optical modulation, wavelength-insensitive optical switching and efficient optical coupling techniques in our group. Several CMOS-compatible silicon optical couplers with different structures have been developed, showing the highest coupling efficiency of 65%. Broadband silicon-based optical switches with sub-nanosecond switching on-off time are experimentally realized. Silicon modulators with novel PN junctions are demonstrated with the speed up to 50 Gb s −1 .
Compact and power-efficient silicon modulators Beyond 60 Gbit/s

Xi Xiao,Hao Xu,Xianyao Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1109/CLEOPR.2013.6600260

2013-01-01

Abstract:Compact and high-speed silicon microring and Mach-Zehnder modulators are presented. Low-power serial 60 Gbit/s and 4λ×50 Gbit/s modulations are both experimentally demonstrated.
Silicon Photonic Modulators for High Speed Optical Analog Links

C. Lacava,D.J. Thomson,K. Li,I. Demirtzioglou,A. Shakoor,D. J. Richardson,F. Zhang,G. T. Reed,P. Petropoulos

DOI: https://doi.org/10.1364/ps.2017.pw2d.3

2017-01-01

Abstract:We discuss recent progress on the design of silicon photonic modulators for high speed digital and analog optical links and their implementation using advanced modulation formats (including PAM and DMT).
High-speed silicon modulator based on cascaded microring resonators.

Yingtao Hu,Xi Xiao,Hao Xu,Xianyao Li,Kang Xiong,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1364/OE.20.015079

IF: 3.8

2012-01-01

Optics Express

Abstract:A high-speed silicon modulator based on cascaded double microring resonators is demonstrated in this paper. The proposed modulator experimentally achieved 40 Gbit/s modulation with an extinction ratio of 3.9 dB. Enhancement of the modulator achieves with an ultra-high optical bandwidth of 0.41 nm, corresponding to 51 GHz, was accomplished by using cascaded double ring structure. The described modulator can provides an ultra-high-speed optical modulation with a further improvement in electrical bandwidth of the device. (c) 2012 Optical Society of America
Highly Efficient Silicon Michelson Interferometer Modulators

Xianyao Li,Xi Xiao,Hao Xu,Zhiyong Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1109/lpt.2013.2238625

IF: 2.6

2013-01-01

IEEE Photonics Technology Letters

Abstract:We present the first high-speed silicon Michelson interferometer (MI) modulator with two 500 μm-long phase shifters. The utilized MI optical structure is an enhanced Mach-Zehnder interferometer (MZI) with both arms incorporated with reflective mirrors. The light in the MI travels back and forth along the phase shifting waveguides and therefore doubles the effective length of light-carrier interaction. Improvement on the modulation efficiency is experimentally demonstrated. Our MI modulator shows high efficiency with a low figure of merit VπLπ of 0.72 V·cm~0.91V·cm under the bias of -1 V~-6V. High-speed modulations are performed at 25 Gbit/s and 30 Gbit/s with the extinction ratio of 8 dB and 6.5 dB, respectively, showing great potential in the future optical interconnects.
Silicon-based CMOS Photonic Devices Using Carrier Dispersion Effect

赵勇,江晓清,杨建义,王明华

2009-01-01

Abstract:In order to realize the practical application of the Silicon-based optoelectronic devices, the progress and characteristics of Silicon-based CMOS photonic devices using carrier dispersion effect with structures of P-I-N, Bipolar Mode Field Effect Transistor(BMFET), Metal Oxide Semiconductor(MOS) and PN junction are reviewed. And our work in design and fabrication of Silicon-based CMOS photonic devices is reported. The devices fabricated by commercial CMOS process have expected results. The extinction ratios of an optical modulator, a 1 × 2 optical switch and a ring resonator are about 18 dB, 21 dB and 8~12 dB, respectively. The introduction of CMOS technology to the design and fabrication of Silicon-based photonic devices will make integrated optics be on a new level.
High-speed packaging for silicon modulator

Yadong Liu,Tao Chu

DOI: https://doi.org/10.3390/optofluidics2017-04387

2017-01-01

Abstract:This paper reports a high-speed packaging for Silicon Mach-Zehnder modulators (MZMs). The radio frequency (RF) input port of the package is commercially available GPPO type. High-frequency ceramic substrate is designed to shorten the length of gold wire to suppress the RF attenuation. Gratings and single-mode fibers using inclined-surface coupling are used to realize low-loss and large tolerance coupling. In measurement, clear eye diagrams with ER of 10.1 dB and 7.6 dB were obtained at 25 Gb/s and 40 Gb/s modulations. Silicon photonics has become a hot research topic in the field of optoelectronics in recent years, since silicon–based optical device can achieve high density integration, low power consumption, low cost photonic devices, realize monolithic integration with electronic devices, and it is compatible with traditional CMOS processes [1]. Silicon electro-optic modulators which are key devices in optoelectronic information transmission and processing have got great developments in recent years. High speed OOK silicon modulators have been demonstrated [2-4]. The silicon modulator packaging has also been studied [5-6]. However, the operating speed of packaged silicon modulators still need to be improved. Our butterfly package for silicon modulator is illustrated in Figure 1. Two main designs were applied for high speed packaging: the modulator chip was designed with reverse PN mode, whose PN junction capacitance is smaller and the modulator electrode was carefully designed using CPW travelling-wave electrodes; GCPW transmission lines with metallic holes were adopted to fabricate the high-frequency ceramic substrates to make the high-speed electrical signal effective loading on the electrode of the MZM chip. Since micro-strip-like line (MSL) mode in GCPW line might exist, which usually cause energy coupling of CPW mode and prompt a microwave resonant of transmission response in high frequency range [7], we made metallic holes on a transmission line to suppress the microwave resonant [8-9]. Grating coupler and single-mode fiber with inclined-surface are used in optical coupling. The advantages of this optical coupling method is larger misalignment tolerance and cheap cleaved fiber packaging. Nickel metal tube is installed close to the inclined-surface of single-mode fiber, the position and angle of the optical fiber is adjusted by special fixture clamping nickel metal tube and adjusting the special fixture. Assuming the optical fiber is parallel to the chip surface, there is a relation of θ=2*φ-90o. We choose the φ=51 deg. as our grating incidence angle is 12 degree. Eye-diagram measurements were carried to demonstrate the high-speed operation of the packaged modules. Experimental results were presented in Fig. 4(a) and 4(b). Clear eye diagrams with ERs of 10.1 dB and 7.6 dB were obtained at 25 Gb/s and 40 Gb/s modulation speed. By improving the welding between the pin of GPPO connector and ceramic substrates, further reducing the length of gold wires from the ceramic substrates to the modulator pads, the speed of the packaged MZM module could be higher.
High Baud Rate All-Silicon Photonics Carrier Depletion Modulators

Jianying Zhou,Jian Wang,Likai Zhu,Qun Zhang

DOI: https://doi.org/10.1109/JLT.2019.2933384

IF: 4.7

2020-01-01

Journal of Lightwave Technology

Abstract:We achieved high performance high speed silicon photonics carrier-depletion Mach-Zehnder modulation with commercial foundry by co-optimization of doping and device design assisted with an accurate electro-optical (EO) model. We demonstrated high performance IQ modulators operating at 85 Gbaud 16 QAM and 64 Gbaud 64 QAM with extinction ratio of over 25 dB. For the design of the high performance all-silicon carrier depletion modulator, we developed modeling and design tools to provide not only accuracy, but also efficiency in the simulation of distributed optical and electronic characteristics of travelling waveguides with different designs of optical and microwave waveguides under various doping conditions, which allow the co-design of velocity phase match between optical and microwave waveguides and the impedance match between microwave travelling waveguide and terminal impedance. Our experimental characterization test data agreed well with the model simulation data. More recently, with practical Nyquist filter and linear compensation in commercial arbitrary wave generator (AWG) and optical modulation analyzer (OMA), we demonstrated 100 Gbaud 32 QAM with an all-silicon IQ modulator, which has 6 dB electro-optical bandwidth of 50 GHz and BER achieving FEC threshold with a modern FEC, showing the potential for Tb/s applications.
Silicon Photonics for Advanced Optical Communication Systems

Zhiping Zhou,Xingjun Wang,Huaxiang Yi,Zhijuan Tu,Wei Tan,Qifeng Long,Mei Yin,Yawen Huang

DOI: https://doi.org/10.1117/12.2009453

IF: 1.3

2013-01-01

Optical Engineering

Abstract:In this paper, we demonstrated recent progress on Si based optical components for advanced optical communication systems. The polarization beam splitter with extinction ratio of more than 20dB and the optical 90° hybrid having phase deviation within ±5° were obtained using MMI structures. The 12Gb/s modulators and the 20GHz photodetectors were measured. Benefiting from the unique properties of silicon modulator, an error-free 80Km transmission of the signals generated by our silicon carrier-depletion Mach-Zehnder modulator was also demonstrated at 10Gb/s and the power penalty was as low as 1.15dB. These results show that silicon photonics has a great potential in advanced optical communication systems.
Developments in Gigascale Silicon Optical Modulators Using Free Carrier Dispersion Mechanisms

Juthika Basak,Ling Liao,Ansheng Liu,Doron Rubin,Yoel Chetrit,Hat Nguyen,Dean Samara-Rubio,Rami Cohen,Nahum Izhaky,Mario Paniccia

DOI: https://doi.org/10.1155/2008/678948

2008-06-16

Advances in Optical Technologies

Abstract:This paper describes the recent advances made in silicon optical modulators employing the free carrier dispersion effect, specifically those governed by majority carrier dynamics. The design, fabrication, and measurements for two different devices are discussed in detail. We present an MOS capacitor-based modulator delivering 10 Gbps data with an extinction ratio of 4 dB and a pn-diode-based device with high-speed transmission of 40 Gbps and bandwidth greater than 30 GHz. Device improvements for achieving higher extinction ratios, as required for certain applications, are also discussed. These devices are key components of integrated silicon photonic chips which could enable optical interconnects in future terascale processors.
High Speed Silicon Mach-Zehnder Modulator with Circuit Model Analysis

Hao Xu,Xi Xiao,Xianyao Li,Yingtao Hu,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1364/acpc.2012.as3b.3

2012-01-01

Abstract:We report a 40 Gbit/s traveling-wave silicon Mach-Zehnder modulator fabricated in a commercial 0.18 μm CMOS process. A distributed circuit model is proposed to characterize the bandwidth performance of this modulator.
SOI Based Optical Waveguide Devices with 44gbit/s High Speed

Jinzhong Yu,Xi Xiao,Zhiyong Li,Zhongchao Fan,Kang Xiong,Hao Xu,Xianyao Li,Tao Chu,Yude Yu

DOI: https://doi.org/10.1364/iont.2012.ith3b.1

2012-01-01

Abstract:Research results for SOI optical modulator/switch, optical couplers in our group will be presented in the paper. Modulation speed of silicon MZI and MRR modulators with interleaved reverse PN junctions both achieve 44 Gbit/s, respectively. SOI optical couplers with 6 different structures have been developed, coupling efficiency of 65% has been obtained.
Design and Electro-Optical Co-Optimization of High-Speed Travelling Wave Silicon-Organic Hybrid Modulators

Shuojian Zhang,Yimin Xia,Jialin Cheng,Jian‐Jun He

DOI: https://doi.org/10.1117/12.2686639

2023-01-01

Abstract:Silicon-organic hybrid (SOH) modulators are promising as they have large bandwidth, high modulation efficiency and low optical loss. In this paper, we present the optical and electrical design and simulation of a high-speed travelling wave SOH modulator with multiple interplay parameters. We also implement the electro-optical co-optimization to delve into the influence of the key design parameters and propose the design guideline. The results demonstrate a modulator with 3 dB bandwidth of 72 GHz, modulation efficiency of 1.26 Vmm and optical loss less than 1 dB.

High Speed Silicon Photonic Modulators

High-speed Silicon Modulators for the 2 Μm Wavelength Band

High-Baudrate Silicon Photonics Ring Resonator and Mach-Zehnder Modulators for Short-Reach Applications

High-Baudrate SiP and InP Modulators for Data Center Interconnects

Recent Progress on Ultrahigh Speed Optical Modulator

30 Gbps high optical bandwidth silicon modulator

60 Gbit/s Silicon Modulators with Enhanced Electro-Optical Efficiency

High Baud Rate Transmission with Silicon Photonic Modulators

Development of Silicon Photonic Devices for Optical Interconnects

Compact and power-efficient silicon modulators Beyond 60 Gbit/s

Silicon Photonic Modulators for High Speed Optical Analog Links

High-speed silicon modulator based on cascaded microring resonators.

Highly Efficient Silicon Michelson Interferometer Modulators

Silicon-based CMOS Photonic Devices Using Carrier Dispersion Effect

High-speed packaging for silicon modulator

High Baud Rate All-Silicon Photonics Carrier Depletion Modulators

Silicon Photonics for Advanced Optical Communication Systems

Developments in Gigascale Silicon Optical Modulators Using Free Carrier Dispersion Mechanisms

High Speed Silicon Mach-Zehnder Modulator with Circuit Model Analysis

SOI Based Optical Waveguide Devices with 44gbit/s High Speed

Design and Electro-Optical Co-Optimization of High-Speed Travelling Wave Silicon-Organic Hybrid Modulators