Abstract:The use of the molecular n‐dopant diquat (DQ) in several solution‐processed non‐fullerene acceptor molecules, is demonstrated. The presence of DQ leads to major enhancement in the electron mobility across all molecules, reaching a maximum value of >1 cm2 V−1 s−1 for O‐IDTBR. The improvement is shown to originate from the suppressed contact resistance and the synergistic microstructural changes induced by the dopant. Molecular doping of organic semiconductors is often used to enhance their charge transport characteristics. Despite its success, however, most studies to date concern p‐doping with considerably fewer reports involving n‐dopants. Here, n‐doping of organic thin‐film transistors (OTFTs) based on several non‐fullerene acceptor (NFA) molecules using the recently developed diquat (DQ) as a soluble molecular dopant is reported. The low ionization potential of DQ facilitates efficient electron transfer and subsequent n‐doping of the NFAs, resulting in a consistent increase in the electron field‐effect mobility. Solution‐processed BTP‐eC9 and N3‐based OTFTs exhibit significant increase in the electron mobility upon DQ doping, with values increasing from 0.02 to 0.17 cm2 V–1 s–1 and from 0.2 to 0.57 cm2 V–1 s–1, respectively. A remarkable electron mobility of >1 cm2 V–1 s–1 is achieved for O‐IDTBR transistors upon optimal doping with DQ. The enhanced performance originates primarily from synergistic effects on electronic transport and changes in morphology, including: i) significant reduction of contact resistances, ii) formation of larger crystalline domains, iii) change of preferred crystal orientation, and iv) alteration in molecular packing motif. This work demonstrates the universality of DQ as an electronic additive for improving electron transport in OTFTs.

Electron Transport and Nanomorphology in Solution‐Processed Polymeric Semiconductor N‐doped with an Air‐Stable Organometallic Dimer

Solution doping of organic semiconductors using air-stable n-dopants

Transition metal-catalysed molecular n-doping of organic semiconductors

Introducing a Nonvolatile N‐Type Dopant Drastically Improves Electron Transport in Polymer and Small‐Molecule Organic Transistors

n-Doping of organic electronic materials using air-stable organometallics.

Thermally Activated n-Doping of Organic Semiconductors Achieved by N-Heterocyclic Carbene Based Dopant

A Novel Solution‐Processable N‐dopant Based on 1,4‐dihydropyridine Motif for High Electrical Conductivity of Organic Semiconductors

Improved Electron Transport with Reduced Contact Resistance in N-Doped Polymer Field-Effect Transistors with a Dimeric Dopant

Fermi Level Pinning Induced by Doping in Air Stable n-Type Organic Semiconductor

Surface Doping Induced Mobility Modulation Effect for Transport Enhancement in Organic Single Crystal Transistors

Electric‐Field‐Controlled Dopant Distribution in Organic Semiconductors

Unravelling Doping Effects on Pedot at the Molecular Level: from Geometry to Thermoelectric Transport Properties

A Thermally Activated And Highly Miscible Dopant For N-Type Organic Thermoelectrics

Addition of Diquat Enhances the Electron Mobility in Various Non‐Fullerene Acceptor Molecules

Understanding the Effects of Molecular Dopant on N‐type Organic Thermoelectric Properties

Site-specific chemical doping reveals electron atmospheres at the surfaces of organic semiconductor crystals

Dopant-induced Morphology of Organic Semiconductors Resulting in High Doping Performance

Doping Versatile N-Type Organic Semiconductors Via Room Temperature Solution-Processable Anionic Dopants

Nanoscale doping of polymeric semiconductors with confined electrochemical ion implantation

Enhancement of the charge-generation efficiency for a naphthalene diimide-based polymer semiconductor by using a pyrene-substituted n-dopant

Efficient N‐doping of Polymeric Semiconductors Through Controlling the Dynamics of Solution‐State Polymer Aggregates