Abstract:With the continuous development of silicon-based optoelectronic chips, their high-power applications in communication, ranging, and other fields are gradually increasing. However, the nonlinear effects of silicon (Si) cause significant output power loss when the input optical power surpasses a certain threshold. This nonlinear relationship between the input optical power and the chip's output power reduces its working performance. Therefore, the importance of regulating the nonlinear phenomena of the chip gradually becomes prominent. In this regard, Sb2Se3 is an excellent material. We propose a scheme to improve the nonlinear power threshold by depositing crystalline Sb2Se3 (c-Sb2Se3) on the top of Si waveguides. Noted that optical loss caused by nonlinear absorption can be depressed by the c-Sb2Se3 film, as well as loss compensation is proportional to the length of the c-Sb2Se3 film deposited. This article theoretically analyzes the characteristics of Sb2Se3, which material can compensate for the nonlinear effect of Si during high-power operation of Si chips. This compensation increases the optical power threshold of nonlinear excitation and is nonvolatile. C-Sb2Se3 films with different lengths (from 15 μm to 60 μm) were deposited on Si waveguides and Si microring resonators with different coupling gap (from 0.2 μm to 0.35 μm) respectively. The results demonstrate a significant improvement in the device's optical nonlinear power threshold. Furthermore, as the length of the c-Sb2Se3 film increases, the optical nonlinear power threshold increases more significantly.

Electrical Nonlinearity in Silicon Modulators Based on Reversed PN Junctions

Study of Electrical Nonlinearity in Analog Silicon Modulator

Second Harmonic Distortion Comparison of Mach-Zehnder Silicon Modulators Based on Lateral and Interdigitated PN Junctions

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

Improving the Linearity of Silicon Ring Modulators by Manipulating the Photon Dynamics

Linearity Comparison of Silicon Carrier-Depletion-Based Single, Dual-Parallel, and Dual-Series Mach–Zehnder Modulators

High Linearity Silicon Modulator Capable of Actively Compensating Input Distortion.

Improving the Linearity of Silicon Ring Modulators by Manipulating the Quality Factor and Operation Wavelength

Highly linear silicon Mach-Zehnder modulators with optimized phase-shifter

Silicon Dual-Series Mach-Zehnder Modulator with High Linearity

High speed silicon Mach-Zehnder modulator based on interleaved PN junctions.

A high linear silicon Mach-Zehnder modulator by the dual-series architecture

Influence of Photocarriers to Silicon Optical Modulator Based on Reverse-Biased Pn Diode at 1550 Nm Wavelength

25Gbit/s Fully Cmos-Compatible Silicon Modulator Based on Interleaved Pn Junctions

Nonlinear Distortion in a Silicon Microring-Based Electro-Optic Modulator for Analog Optical Links

Performance Influence of FCA and Nonlinear FCD to the Mach-Zehnder-Interference Based Silicon DPSK Generation

Nonlinear Regulation on Silicon Photonic Chips Based on Sb2Se3 Thin Films

25 Gbit/s silicon microring modulator based on misalignment-tolerant interleaved PN junctions.

Numerical Investigation of the Linearity of Graphene-Based Silicon Waveguide Modulator

Improved Extinction Ratio of Mach-Zehnder Based Optical Modulators on CMOS Platform

Ultrahigh-linearity dual-drive scheme using a single silicon modulator