Abstract:Phase equilibria of the Ti-Ga-Sn system have been determined at primary crystallization and at 1000 °C in the composition interval ~ 50-100 at.% Ti based on differential thermal analysis, x-ray powder diffraction, scanning electron microscopy and electron microprobe analysis. Partial liquidus and solidus projections, the melting diagram, a number of vertical sections, isothermal section at 1000 °C, as well as the reaction scheme (Scheil diagram) for the Ti-Ga-Sn system were constructed. A ternary compound Ti 5 GaSn 2 (τ) (Nb 5 SiSn 2 -type structure, tI 32- I 4/ mcm ), found by us previously, forms by peritectic reaction L + Ti 2 (Sn, Ga) + Ti 5 (Sn, Ga) 3-4 ⇄ τ at 1500 °C and has a wide homogeneity range from 9 to 23.5 at.% Ga at solidus temperature and from 4 to 34 at.% Ga at 1000 °C, and located along constant composition of ~ 62.5 at.% Ti. D8 8 -type compounds Ti 5 Sn 3 and Ti 5 Ga 4 form a continuous solid solution, denoted Ti 5 (Sn, Ga) 3-4 , at all investigated temperatures. Ga-poor part of it (below ~ 12.5 at.% Ga) forms by an interstitial mechanism, while in the interval above ~ 12.5 at.% Ga it is a substitutional phase. Isostructural compounds Ti 2 Sn and Ti 2 Ga also form a continuous solid solution Ti 2 (Sn, Ga) at solidus temperatures, which decomposes with decreasing temperature. Meanwhile, at 1000 °C, one more continuous solid solution Ti 3 (Sn, Ga) forms between isostructural compounds Ti 3 Sn and Ti 3 Ga.

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