Abstract:We reported in the paper the optimization and control of InSb interface properties during molecular beam epitaxy growth of InAs/GaSb superlattice structures. Samples with identical structure but different growth approaches, conventional molecular beam epitaxy (MBE) and migration-enhanced epitaxy (MEE), for interface layers were first prepared and their structural, morphological and optical properties were compared. The MEE samples had significant higher As composition in InSb interface layers and higher luminescence efficiency. Samples with different InSb interface layer thickness were then prepared. By changing the interface layer thickness, one can effectively tune the lattice mismatch and photoluminescence peak wavelength. Though X-ray diffraction satellite peak linewidth and surface roughness of the grown samples changed little, the one with smallest negative lattice mismatch showed the highest luminescence efficiency. Finally a P-I-N superlattice detector structure was grown with controlled interfaces. The full width at half maximum (FWHM) of the 1st-order X-ray diffraction satellite peak of the absorption layers was only 19″. The detector structure showed a cutoff wavelength of 6.3µm at 77K. The dark current density at −50mV bias was 4.3×10−5A/cm2 and the peak detectivity was 4.2×1011cmHz1/2/W.

Beryllium Compensation Doped InGaAs/GaAsSb Superlattice Photodiodes

Growth and Fabrication of InAs/GaSb Type II Superlattice Mid-Wavelength Infrared Photodetectors

High Performance Long Wavelength Superlattice Photodetectors Based on Be Doped Absorber Region

InAs-based InAs/GaAsSb Type-Ii Superlattices: Growth and Characterization

InAs/GaSb type-II superlattice mid-wavelength infrared focal plane array detectors grown by molecular beam epitaxy

High Performance InAs/GaAsSb Superlattice Long Wavelength Infrared Photo-Detectors Grown on InAs Substrates

Inas-Based Type-Ii Superlattice Long Wavelength Photodetectors

Molecular Beam Epitaxy Growth Of High Quality Inas/Gasb Type-Ii Superlattices For Long Wavelength Infrared Detection

Mid-wavelength infrared InAs/GaSb type Ⅱ superlattice detectors

Investigation of deep level defects on Beryllium compensation doping of In 0.53 Ga 0.47 As/GaAs 0.49 Sb 0.51 type-II superlattice photodiodes.

Material and device characterization of Type-II InAS/GaSb superlattice infrared detectors

Schematic of InAs/GaSb superlattice VLWIR photodide with PIN structure and the current responsivity spectrum of the SL photodiode. Interface optimization and fabrication of InAs/GaSb type II superlattice for very long wavelength infrared photodetectors

Direct Growth of InAs/GaSb Type II Superlattice Photodiodes on Silicon Substrates

Demonstration of Si Based InAs/GaSb Type-Ii Superlattice P-I-n Photodetector

Performance comparison between the InAs-based and GaSb-based type-II superlattice photodiodes for long wavelength infrared detection.

InAs/InAsSb Type-Ii Superlattice with Near Room-Temperature Long-Wave Emission Through Interface Engineering

Mid-Wave Infrared InAs/GaSb Type-II Superlattice Photodetector with N-B-p Design Grown on GaAs Substrate

Pbn Type Short-Wavelength Infrared Photodetector with an Ultralow Dark Current and Extended Wavelength Based on a Strained InGaAs/GaAsSb Superlattice.

Interface layer control and optimization of InAs/GaSb type-II superlattices grown by molecular beam epitaxy

Molecular Beam Epitaxy Growth and Characteristics of the High Quantum Efficiency InAs/GaSb Type-Ii Superlattices MWIR Detector

High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection