Direct Growth of InAs/GaSb Type II Superlattice Photodiodes on Silicon Substrates

Claudia Gonzalez Burguete,Daqian Guo,Pamela Jurczak,Fan Cui,Mingchu Tang,Wei Chen,Zhuo Deng,Yaojiang Chen,Marina Gutierrez,Baile Chen,Huiyun Liu,Jiang Wu
DOI: https://doi.org/10.1049/iet-opt.2017.0078
IF: 1.691
2018-01-01
IET Optoelectronics
Abstract:In this study, p-i-n InAs/GaSb type II superlattice photodiodes were directly grown on silicon substrates. The superlattice structures were grown monolithically on miscut Si substrates via a 10nm AlSb nucleation layer. Interfacial misfit array technique was used to accommodate the large lattice mismatch between III-Sb epi-layers and Si. Atomic force microscopy and X-ray diffraction measurements revealed degraded material quality of type II superlattices grown on Si, compared with the sample grown on GaAs. Photoluminescence characterisation indicates comparable optical properties with about 39% deduction of peak intensity. Dark current measurements were also used to study the electrical properties of the samples.
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