Predictive As-Grown-Generation (A-G) Model For Bti-Induced Device/Circuit Level Variations In Nanoscale Technology Nodes

Rui Gao,Zhigang Ji,Sharifah Wan Muhamad Hatta,J. F. Zhang,J. Franco,Ben Kaczer,Wei Dong Zhang,Meng Duan,S. De Gendt,D. Linten,G. Groeseneken,Jinshun Bi,Mengxin Liu
DOI: https://doi.org/10.1109/IEDM.2016.7838520
2016-01-01
Abstract:A new model for assessing NBTI and PBTI induced time-dependent variability under practical operation workloads is proposed. The model is based on a realistic understanding of different types of defects and has excellent predictive capability, as validated by comparison with experimental data. In addition, a new fast wafer-level test scheme for parameter extraction is developed, reducing test time to 1 hour/device and significantly improving the efficiency for variability tests of nanoscale devices. The model is implemented into a commercial simulator and its applicability for circuit level simulation is demonstrated.
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