Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

Deep-etched III-V Lasers Grown Directly on Silicon Substrates

Continuous-Wave Emission Of Iii-V Quantum Dot Lasers Grown Directly On Si Substrates

Tunable Quantum Dot Lasers Grown Directly on Silicon

High-performance InAs/GaAs Quantum-Dot Laser Didoes Monolithically Grown on Silicon for Silicon Photonics

Monolithic Quantum-Dot Distributed Feedback Laser Array on Silicon

Reliable InAs quantum dot lasers grown on patterned Si (001) substrate with embedded hollow structures assisted thermal stress relaxation

Long-Wavelength Inas/Gaas Quantum-Dot Light Emitting Sources Monolithically Grown On Si Substrate

1.3 μm InAs/GaAs quantum-dot lasers grown on planar on-axis Si (001) substrates with high slope-efficiency and low differential resistance

Long Lifetime Quantum-Dot Laser Monolithically Grown on Silicon

InAs/GaAs quantum-dot lasers and detectors on silicon substrates for silicon photonics

Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

InAsP/InGaAsP quantum-well 1.3 [micro sign]m vertical-cavity surface-emitting lasers

Electrically Pumped Continuous‐wave 1.3‐µm InAs/GaAs Quantum Dot Lasers Monolithically Grown on Si Substrates

Highly Reliable Quantum Dot Laser Directly Grown on CMOS Compatible Si (001) Substrate

Quantum Dot Lasers on Silicon by Direct Epitaxial Growth

IaAsP/InGaAsP quantum-well 1.3 μm vertical-cavity surface-emitting lasers

Electrically-Pumped Continuous-Wave Quantum-Dot Distributed Feedback Laser Array on Silicon

Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon.

Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

III-V Quantum Dot Lasers Monolithically Grown on Silicon.

Progressing in III-V Semiconductor Quantum Dot Lasers Grown Directly on Silicon: A Review