Effect of Annealing Process on the Heterostructure CuO/Cu 2 O As a Highly Efficient Photocathode for Photoelectrochemical Water Reduction

Fan Du,Qing-Yun Chen,Yun-Hai Wang
DOI: https://doi.org/10.1016/j.jpcs.2016.12.029
IF: 4.383
2017-01-01
Journal of Physics and Chemistry of Solids
Abstract:CuO/Cu2O photocathodes were successfully prepared via simply annealing the electrodeposited Cu2O on fluoride doped tin oxide (FTO) substrate. They were characterized by X-ray diffraction, scanning electron microscopy (SEM), transmission electron microscope (TEM), UV–vis absorption spectra and X-ray photoelectron spectroscopy (XPS). The results showed that the heterojunction of CuO/Cu2O was formed during the annealing process and presented the nature of p-type semiconductor. The photocurrent density and photoelectrochemical (PEC) stability of the p-type heterostructure CuO/Cu2O photocathode was improved greatly compared with the pure Cu2O, which was greatly affected by annealing time and temperature. The highest photo current density of −0.451mA/cm2 and highest stability was obtained via annealing at 650°C for 15min (at −0.3V vs. Ag/AgCl), which gave a remarkable improvement than the as-deposited Cu2O (−0.08mA/cm2). This suggested that the CuO/Cu2O heterojunction facilitated the electron-hole pair separation and improved the photocathode's current and stability.
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