Abstract:Valence state of Fe ions plays an important role in the physical properties of Fe doped ZnO films. Here, a series of Zn1−xFexO films with different Fe concentrations (x = 0, 2.3, 5.4, 7.1, and 9.3 at. %) were prepared to investigate their structural, piezoelectric, ferroelectric, bipolar resistive switching properties, and electrical-control of ferromagnetism at room temperature. The structure characterizations indicate that the chemical state of Fe ions substituting Zn2+ site changes from Fe3+ to Fe2+ with the increase of Fe dopant concentration. We found enhanced piezoelectric and ferroelectric properties in Zn0.977Fe0.023O films with more Fe3+ due to the smaller Fe3+ ionic size in comparison with Zn2+ while the increase of Fe2+ concentration by a larger amount of Fe dopant results in the worse ferroelectric and piezoelectric performance. All Pt/Zn1−xFexO/Pt devices show bipolar resistive switching properties. Especially, devices with lower Fe dopant concentration exhibit better endurance properties due to their higher crystalline quality. The variation of oxygen vacancies during resistive switching provides an opportunity to tune ferromagnetism of Fe-doped ZnO films, giving rise to the integration of charge and spin into a simple Pt/Zn1−xFexO/Pt devices. The multifunctional properties of Fe-doped ZnO films are promising for communication systems and information storage devices.

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