Abstract:Organic material-based bioelectronic nonvolatile memory devices have recently received a lot of attention due to their environmental compatibility, simple fabrication recipe, preferred scalability, low cost, low power consumption, and numerous additional advantages. Resistive random-access memory (RRAM) devices work on the principle of resistive switching, which has the potential for applications in memory storage and neuromorphic computing. Here, natural organically grown orange peel was used to extract biocompatible pectin to design a resistive switching-based memory device of the structure Ag/Pectin/Indium tin oxide (ITO), and the behavior was studied between a temperature range of 10K and 300K. The microscopic characterization revealed the texture of the surface and thickness of the layers. The memristive current-voltage characteristics performed over 1000 consecutive cycles of repeated switching revealed sustainable bipolar resistive switching behavior with a high ON/OFF ratio. The underlying principle of Resistive Switching behavior is based on the formation of conductive filaments between the electrodes, which is explained in this work. Further, we have also designed a 2 × 2 crossbar array of RRAM devices to demonstrate various logic circuit operations useful for neuromorphic computing. The robust switching characteristics suggest possible uses of such devices for the design of ecofriendly bioelectronic memory applications and in-memory computing.

An Organic Nonvolatile Resistive Switching Memory Device Fabricated with Natural Pectin from Fruit Peel

From dead leaves to sustainable organic resistive switching memory

Eco-Friendly Biomemristive Nonvolatile Memory: Harnessing Organic Waste for Sustainable Technology

A flexible nonvolatile resistive switching memory device based on ZnO film fabricated on a foldable PET substrate

An excellent pH-controlled resistive switching memory device based on self-colored (C7H7O4N)(n) extracted from a lichen plant

Fabrication of Carboxymethyl Cellulose and Graphene Oxide Bio-Nanocomposites for Flexible Nonvolatile Resistive Switching Memory Devices.

Resistive Switching in Organic Memory Device Based on Parylene-C With Highly Compatible Process for High-Density and Low-Cost Memory Applications

A sustainable resistive switching memory device based on organic keratin extracted from hair

Biodegradable Skin-Inspired Nonvolatile Resistive Switching Memory Based on Gold Nanoparticles Embedded Alkali Lignin

Resistive Switching in Organic Memory Devices for Flexible Applications

Stable Resistive Switching in ZnO/PVA:MoS2 Bilayer Memristor

Nonvolatile Resistive Memories Utilizing Functional PES-based Supramolecular Film

Stable Resistive Switching in ZnO/PVA:MoS<sub>2</sub> Bilayer Memristor

Ultrafast Degradable Resistive Switching Memory Based on Α-Lactose Thin Films

An excellent pH-controlled resistive switching memory device based on self-colored (C<sub>7</sub>H<sub>7</sub>O<sub>4</sub>N)<sub>n</sub> extracted from a lichen plant

Forming-Free Resistive Switching Memory Based on Lifepo4 Nano-Particle Embedded in Conjugated Polymer

First Fiber‐Shaped Non‐Volatile Memory Device Based on Hybrid Organic–Inorganic Perovskite

Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

A Flexible Organic Resistance Memory Device for Wearable Biomedical Applications

All-nanocellulose Nonvolatile Resistive Memory

Bifunctional resistive switching behavior in an organolead halide perovskite based Ag/CH3NH3PbI3−xClx/FTO structure