Thickness-tuned Transition of Band Topology in ZrTe5 Nanosheets

Jianwei Lu,Guolin Zheng,Xiangde Zhu,Wei Ning,Hongwei Zhang,Jiyong Yang,Haifeng Du,Kun Yang,Haizhou Lu,Yuheng Zhang,Mingliang Tian

DOI: https://doi.org/10.1103/physrevb.95.125135

2017-01-01

Abstract:We report thickness-tuned electrical transport and Hall resistivity in highly anisotropic three-dimensional Dirac semimetal ZrTe5 nanosheets. We find that when the thickness of the nanosheet is blow about 40 nm, the system takes a clear transition from topological semimetal with two bands carriers to a single band with conventional hole carriers. The resistivity peak temperature T* decreases systematically with decreasing thickness down to about 40 nm, then shifts up with the further decrease of the thickness. Analysis of the data below 40 nm indicates that the hole carriers completely dominate the transport in the entire temperature range, regardless of the temperature being below or above T*. By further tracking the carrier density, we find that the Fermi level shifts consecutively downward from conduction band to the valence band as decreasing the thickness. Our experiments unambiguously reveal a highly thickness-tuned transition of band topology in ZrTe5 nanosheets.