Abstract:The phase transition behaviour of vanadium dioxide (VO2) with different thicknesses has been investigated by temperature-dependent optical transmittance and Raman spectra. It is found that the crystal orientation has a great effect on the metal-insulator transition (MIT) of VO2 films. The x-ray diffraction (XRD) analysis shows that the films are polycrystalline and exhibit the characteristics of the monoclinic phase. The preferential growth crystal orientation (0 2 0) is converted to the ((1) over bar 1 1) plane with the film thickness increasing. It is believed that the ((1) over bar 1 1) plane is the reflection of a twinned structure with (0 1 1) crystal orientation, which will lead to the arrangements of oxygen atoms and vanadium atoms deviating from the pure monoclinic structure. It is found that the highest order transition (E-3) is highly susceptible to the crystal orientation, whereas the lowest order transition (E-1) is nearly unaffected by it. The E-3 exhibits an anomalous temperature dependence with an abrupt blue-shift (similar to 0.5 eV) in the vicinity of the metal-insulator transition (MIT) for VO2 film with a thickness of 84 nm. The findings show that the empty sigma* band can be driven close to the Fermi level when the (0 2 0) orientation is converted to the ((1) over bar 1 1) orientation. Compared to the VO2 films with thicknesses of 39 and 57 nm, the E-3 decreases by 0.8 eV and the E-2 increases by about 0.1 eV at the insulator state for the VO2 film with a thickness of 84 nm. The abnormal electronic transition and the variation of energy band is likely caused by the lattice distortion and V-V dimerisation deviation from the monoclinic a(m) axis.

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