Abstract:The phase transition behaviour of vanadium dioxide (VO2) with different thicknesses has been investigated by temperature-dependent optical transmittance and Raman spectra. It is found that the crystal orientation has a great effect on the metal-insulator transition (MIT) of VO2 films. The x-ray diffraction (XRD) analysis shows that the films are polycrystalline and exhibit the characteristics of the monoclinic phase. The preferential growth crystal orientation (0 2 0) is converted to the ((1) over bar 1 1) plane with the film thickness increasing. It is believed that the ((1) over bar 1 1) plane is the reflection of a twinned structure with (0 1 1) crystal orientation, which will lead to the arrangements of oxygen atoms and vanadium atoms deviating from the pure monoclinic structure. It is found that the highest order transition (E-3) is highly susceptible to the crystal orientation, whereas the lowest order transition (E-1) is nearly unaffected by it. The E-3 exhibits an anomalous temperature dependence with an abrupt blue-shift (similar to 0.5 eV) in the vicinity of the metal-insulator transition (MIT) for VO2 film with a thickness of 84 nm. The findings show that the empty sigma* band can be driven close to the Fermi level when the (0 2 0) orientation is converted to the ((1) over bar 1 1) orientation. Compared to the VO2 films with thicknesses of 39 and 57 nm, the E-3 decreases by 0.8 eV and the E-2 increases by about 0.1 eV at the insulator state for the VO2 film with a thickness of 84 nm. The abnormal electronic transition and the variation of energy band is likely caused by the lattice distortion and V-V dimerisation deviation from the monoclinic a(m) axis.

Depressed Transition Temperature of Wxv1-Xo2: Mechanistic Insights from the X-Ray Absorption Fine Structure (xafs) Spectroscopy

Depressed transition temperature of W(x)V(1-x)O2: mechanistic insights from the X-ray absorption fine structure (XAFS) spectroscopy

Unraveling Metal-insulator Transition Mechanism of VO 2 Triggered by Tungsten Doping

Thermal-stimulated Phase Transition of Vanadium Dioxide Enabling Versatile Transduction and Smart Applications

Predicted Rebound Effects of Insulator-Metal Transition Temperature in Tungsten Doped VO2 Via First-Principles Method

Theoretical Study On The Tungsten-Induced Reduction Of Transition Temperature And The Degradation Of Optical Properties For Vo2

Stabilization of the VO2(M2) Phase and Change in Lattice Parameters at the Phase Transition Temperature of WXV1- XO2 Thin Films

Metal–Insulator Phase Transition in Tungsten-Doped Vanadium Dioxide Thin Films

Accelerated microwave-assisted synthesis and in situ X-ray scattering of tungsten-substituted vanadium dioxide (V1−xWxO2)

Structural phase transition of tungsten-doped vanadium dioxide nanopowders prepared by thermolysis

Tungsten-doped vanadium dioxide thin film synthesis by alternate layer-by-layer growth and post-deposition annealing

Synthesis, structure and properties of printable W-doped thermochromic VO2 with a low phase transition temperature

Phase, Microstructure, Thermochromic, and Thermophysical Analyses of Hydrothermally Synthesized W-Doped VO2 Nanopowder

Optical properties and structural phase transitions of W-doped VO2(R) under pressure

Spectral Assignments in the Infrared Absorption Region and Anomalous Thermal Hysteresis in the Interband Electronic Transition of Vanadium Dioxide Films

Effects of W Doping in VO2 on the Magnetic Properties of VO2/Ni Heterostructures

Intrinsic optical properties of vanadium dioxide near the insulator-metal transition.

Non-Equilibrium Spark Plasma Reactive Doping Enables Highly Adjustable Metal to Insulator Transitions and Improved Mechanical Stability for VO2

Manipulating the metal-to-insulator transitions of VO2 combining the compositing and doping strategies

Modulation of VO2 metal-insulator transition by co-doping of hydrogen and oxygen vacancy

Effects of crystal orientation on electronic band structure and anomalous shift of higher critical point in VO2 thin films during the phase transition process