Abstract:Selective area epitaxy is a powerful growth technique that has been used to produce III-V semiconductor nanowire and nanomembrane arrays for photonic and electronic applications. The incorporation of a heterostructure such as quantum wells (QWs) brings new functionality and further broadens their applications. Using InP nanowires and nanomembranes as templates, we investigate the growth of InAsP QWs on these pure wurtzite nanostructures. InAsP QWs grow both axially and laterally on the nanowires and nanomembranes, forming a zinc blende phase axially and wurtzite phase on the sidewalls. On the non-polar {1%100} sidewalls, the radial QW selectively grows on one sidewall which is located at the semi-polar h11%2i A side of the axial QW, causing the shape evolution of the nanowires from hexagonal to triangular cross section. For nanomembranes with {1%100} sidewalls, the radial QW grows asymmetrically on the {1%100} facet, destroying their symmetry. In comparison, nanomembranes with {11%20} sidewalls are shown to be an ideal template for the growth of InAsP QWs, thanks to the uniform QW formation. These QWs emit strongly in the near IR region at room temperature and their emission can be tuned by changing their thickness or composition. These findings enrich our understanding of the QW growth, which provides new insights for heterostructure design in other III-V nanostructures.

Growth of Isolated InAs Quantum Dots on Core-Shell GaAs/InP Nanowire Sidewalls by MOCVD

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Regrowth Dynamics of InAs Quantum Dots on the GaAs Circular Mesa

Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Growth and Photoluminescence of InxGa1−xAs Quantum Dots on the Surface of GaAs Nanowires by Metal Organic Chemical Vapor Deposition

Controllable Growth and Optical Properties of Inp and Inp/Inas Nanostructures on the Sidewalls of Gaas Nanowires

Growth of InAs quantum dots on Si-based GaAs nanowires by controlling the surface adatom diffusion

Realization of Stranski-Krastanow InAs quantum dots on nanowire-based InGaAs nanoshells

New Growth Mechanism of InAs-GaSb Core-Shell Nanowires with Polygonal Triangular Pyramids and Quantum Dots Grown by MOCVD

Growth and Characterization of Inas Quantum Dots on Inp Nanowires with Zinc Blende Structure

Fabrication and Optical Properties of Multishell Inas Quantum Dots on Gaas Nanowires

Formation Mechanism and Optical Properties of InAs Quantum Dots on the Surface of GaAs Nanowires.

Wavelength-tunable InAsP Quantum Dots in InP Nanowires

Self-assembled Semiconductor Quantum Dots Decorating the Facets of GaAs Nanowire for Single-Photon Emission

Embedded High-Quality Ternary GaAs1-xSbx Quantum Dots in GaAs Nanowires by Molecular-Beam Epitaxy

Zincblende InAsxP1- x/InP Quantum Dot Nanowires for Telecom Wavelength Emission

Facet-dependent growth of InAsP quantum wells in InP nanowire and nanomembrane arrays.

Compound Semiconductor Quantum Dots and Nanowires for Optoelectronic Device Applications

Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates

Single InAs Quantum Dot Grown at the Junction of Branched Gold-Free GaAs Nanowire.