Abstract:Due to their novel spin and valley properties, two-dimensional (2D) ferrovalley materials are expected to be promising candidates for next-generation spintronic and valleytronic devices. However, they should be subject to the various defects in practical applications. Therefore, the electronic, valley, and magnetic properties may be modified in the presence of the defect. In this work, utilizing first-principles calculations, we systematically studied the defect effects on the electronic, valley, and magnetic properties of 2D ferrovalley material VSi2N4. It has been found that C doping, O doping, and N vacancy result in the half-metallic feature, Si vacancy results in the metallic feature, and V vacancy results in a bipolar gapless semiconductor. These defect-induced electronic properties can be effectively tuned by changing defect concentration and layer thickness. Since the impurity bands do not affect the K and K` valleys, the valley polarization is well maintained in O-doped and N-defective systems. Importantly, these defects play crucial role in modifying the magnetic properties of the pristine VSi2N4, especially the magnitude of local magnetic moments and the magnetic anisotropy energy. Detail analysis of the density of states demonstrates that the variations of total magnetic moment and magnetic anisotropy energy with biaxial strain are determined by the electronic states nearby the Fermi level rather than the type of defect, which provides a new understanding of the defect effects on the magnetic properties of 2D materials. Moreover, the layer thickness can affect the magnetic coupling between defects and surrounding V atoms. Our results offer an insight into the electronic, valley, and magnetic properties of VSi2N4 in the presence of various point defects.

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