Abstract:Wide bandgap semiconductors doped with transition metals are attracting significant attention in the fabrication of dilute magnetic semiconductor devices (DMSs). The working principle of DMSs is based on the manipulation of the electron spin, which is useful for magnetic memory devices and spintronic applications. Using the density functional theory (DFT) calculation with the GGA+U approximation, we investigated the effect of native defects on the magnetic and electronic structure of Mn+2-doped 3C-SiC structure. Three structures were selected with variations in the distance between two impurities of (Mn+2)-doped 3C-SiC, which are 4.364 Å, 5.345Å, and 6.171 Å, respectively. We found ferromagnetic coupling for single and double Mn+2 dopant atoms in the 3C-SiC structure with magnetic moments of 3 μB and 6 μB respectively. This is due to the double exchange because of p-d orbital hybridization. The p-orbitals of C atoms play important roles in the stability of the ferromagnetic configuration. The impact of Si-vacancy (nearby, far) and C-vacancy (near) of (Mn+2)-doped 3C-SiC plays an important role in the stabilization of AFM due to super-exchange coupling, while the C-vacancy (far) model is stable in FM. All electronic structures of Mn+2-doped 3C-SiC reveal a half-metallic behavior, except for the Si-vacancy and C-vacancy of (nearby), which shows a semiconductor with bandgap of 0.317 and 0.828 eV, respectively. The Curie temperature of (Mn+2)-doped 3C-SiC are all above room temperature. The study shows that native vacancies play a role in tuning the structure from (FM) to (AFM), and this finding is consistent with experiments reported in the literature.

Vacancy Induced Magnetism in N-doped 4h–sic by First-Principle Calculations

Magnetism induced by nonmagnetic dopants in zinc-blende SiC: First-principle calculations

Role of vacancies in the magnetic and electronic properties of SiC nanoribbons: an ab initio study

Effect of Mn+2 Doping and Vacancy on the Ferromagnetic Cubic 3C-SiC Structure Using First Principles Calculations

Effect of Single Atom Doping on Structural, Electronic and Magnetic Properties of Hexagonal Silicon Carbide (4H-SiC) for Spintronic Application: A first principle study

First-Principles Study of Metal Impurities in Silicon Carbide: Structural, Magnetic, and Electronic Properties

Tuning Magnetism in Transition-Metal-Doped 3c Silicon Carbide Polytype

Investigation Magnetism State of Undoped Surface of 4H-Sic

Magnetism in Transition metal doped Cubic SiC

Dopant-Induced Surface Magnetism in Β-Sic Controlled by Dopant Depth

PROPERTY ENHANCEMENT OF VANADIUM DOPED SILICON CARBIDE: A COMPUTATIONAL STUDY

Density Functional Study on Ferromagnetism in (al, Fe)-codoped 4H-Sic

Identification of silicon vacancy-related electron paramagnetic resonance centers in 4H SiC

Induce Magnetism into Silicene by Embedding Transition-Metal Atoms

Defect-induced Magnetism in Neutron Irradiated 6H-Sic Single Crystals.

Vacancy Defect Complexes in Silicon: Charges and Spin Order

First-Principles Study Of Transition Metal Impurities In Si

Transition between half-metal and ferromagnetic semiconductor induced by silicon vacancy in epitaxial silicene

Rise and fall of defect induced ferromagnetism in SiC single crystals

Insight into the Vacancy Effects on Mechanical and Electronic Properties of V5Si3 Silicides from First-Principles Calculations.

Magnetic detection under high pressures using designed silicon vacancy centres in silicon carbide