Unusual hole and electron midgap states and orbital reconstructions induced huge Ferroelectric Tunneling Electroresistance in BaTiO3/SrTiO3.
Xiao Chi,Han Wang,Rui Guo,Whitcher Thomas James,Xiaojiang Yu,Ping Yang,Xiaobing Yan,Mark B H Breese,Kian Ping Loh,Jingsheng Chen,Andrivo Rusydi
DOI: https://doi.org/10.1021/acs.nanolett.9b04390
IF: 10.8
2020-01-01
Nano Letters
Abstract:Oxide heterostructures have attracted a lot of interest because of their rich exotic phenomena and potential applications. Recently, a greatly enhanced tunneling electroresistance (TER) of ferroelectric tunnel junctions (FTJs) has been realized in such heterostructures. However, our understanding on the electronic structure of resistance response with polarization reversal and the origin of huge TER is still lacking. Here, we report on electronic structures, particularly at the interface and surface, and the control of the spontaneous polarization of BaTiO3 films by changing the termination of a SrTiO3 substrate. Interestingly, unusual electron and hole midgap states are concurrently formed and accompanied by orbital reconstructions, which determine the ferroelectric polarization orientation in the BaTiO3/SrTiO3. Such unusual midgap states, which yield a strong electronic screening effect, reduce the ferroelectric barrier width and height, and pin the ferroelectric polarization, lead to a dramatic enhancement of the TER effect. The midgap states are also observed in BaTiO3 films on electron-doped Nb/SrTiO3 revealing its universality. Our result provides new insight into the origin of the huge TER effect and opens a new route for designing ferroelectric tunnel junction-based devices with huge TER through interface engineering.