Abstract:There are a large number of protons with different energies from the dozens of keV to hundreds of MeV in space environment, which simultaneously act on the bipolar junction transistors (BJTs), and induce different irradiation effect and damage defects. Moreover, interaction between displacement defects and ionization defects occurs. In the paper, the interaction mechanisms between oxide charge and displacement defects in 3DG112 NPN BJTs caused by the combined 70 keV and 170 keV protons with 5MeV proton irradiation are studied. Experimental results show the degradation of current gain increases linearly with increasing the irradiation fluence of the 170 keV and 5MeV protons, but increases nonlinearly for the 70 keV protons, implying that the 170 keV and 5MeV protons mainly induce displacement damage on the NPN BJTs, while the 70 keV protons cause ionization damage. It can be seen from the Geant4 calculation that 70 keV and 170 keV protons cause almost the same ionization damage on the 3DG112 transistors, while have significant difference in displacement damage ability, which is favorable to analyze the effect of displacement damage in oxide layer of NPN BJTs induced by 170 keV and 70 keV protons on ionization damage caused by the subsequent 5MeV protons. DLTS analyses show that 5MeV protons produce mainly displacement defect centers in based-collector junction of 3DG112 transistors, and 170 keV and 70 keV protons only induce almost the same number of the oxide trapped charges. While the combined irradiation can produce the more oxide trapped charges, except displacement defects, showing that displacement damage in oxide layer caused by 170 keV and 70 keV protons can increase the oxide trapped charges during the subsequent 5MeV exposures. Moreover, the more displacement defects in oxide layer will induce more oxide trapped charges, and give more enhanced synergistic effects. These results will help to assess the reliability of BJTs in the space radiation environment.

Displacement Damage in Bipolar Junction Transistors: Beyond Messenger-Spratt

Current Gain Degradation Model of Displacement Damage for Drift BJTs

Neutron Displacement Damage in Bipolar Junction Transistors Isolated from an Integrated Circuit

Synergistic Effect of Ionization and Displacement Damage in Npn Transistors Caused by Protons with Various Energies

Effect of displacement radiation damage on bipolar junction transistors under various bias conditions

Response Mechanisms of Additional Displacement Defects in Oxides to Ionization Damage in Bipolar Transistors

Research on interaction between displacement defects and oxide charge in NPN transistors based on deep level transient spectroscopy

Degradation mechanisms of current gain in NPN transistors

A Novel High-Voltage Trench Gate Insulated Gate Bipolar Transistor With Diffusion Remnant Layer

The equivalence of displacement damage in silicon bipolar junction transistors

Research on the Combined Effects of Ionization and Displacement Defects in NPN Transistors Based on Deep Level Transient Spectroscopy

Transient synergistic damage mechanism and characterization of silicon bipolar junction transistor

Ionization damage in NPN transistors caused by lower energy electrons

Radiation induced deep level defects in bipolar junction transistors under various bias conditions

Analytical Model for Total Ionizing Dose-Induced Excess Base Current in PNP BJTs

Synergistic Effects of NPN Transistors Caused by Combined Proton Irradiations with Different Energies

Analytical models of the electric field and carrier transit time in the base of bipolar junction transistors

Synergistic Effect of Ionization and Displacement Defects in Npn Transistors Induced by 40-Mev Si Ion Irradiation with Low Fluence

Analysis of Displacement Damage Effects on Bipolar Transistors Irradiated by Spallation Neutrons

Radiation Damage and Defects in NPN Bipolar Junction Transistors Irradiated by Silicon Ions with Various Energies

Synergistic Effects of Ionizing Dose and Displacement Damage on SiGe Heterojunction Bipolar Transistors