Abstract:Owing to the moderate energy offset between light and heavy band edges of the rock‐salt structured GeTe, its figure‐of‐merit (ZT) can be enhanced by the rational manipulation of electronic band structures. In this study, density functional theory calculations are implemented to predict that V is an effective dopant for GeTe to enlarge the bandgap and converge the energy offset, which suppresses the bipolar conduction and increases the effective mass. Experimentally, V‐doped Ge1−xVxTe samples are demonstrated to have an enhanced Seebeck coefficient from ≈163 to ≈191 µV K−1. Extra alloying with Bi in Ge1−x−yVxBiyTe can optimize the carrier concentration to further enhance the Seebeck coefficient up to ≈252 µV K−1, plus an outstanding power factor of ≈43 µW cm−1 K−2. Comprehensive structural characterization results also verify the refinement of grain size by V‐doping, associated with highly dense grain boundaries, stacking faults, nanoprecipitates, and point defects, reinforcing the wide‐frequency phonon scattering and in turn, securing an ultralow thermal conductivity of ≈0.59 W m−1 K−1. As a result, the Ge0.9V0.02Bi0.08Te sample shows a peak ZT of >2.1 at 773 K, with an average plateaued average ZT of >2.0 from 623 and 773 K, which extends better thermoelectric behavior for GeTe over a wider temperature range. This study clarifies the multiple benefits of V‐doping in GeTe‐based derivatives and provides a framework for a new‐type of high‐performance middle‐temperature thermoelectric material.

Vanadium Doped Cd0.9Mn0.1Te Crystal and Its Optical and Electronic Properties

Defects, electronic properties, and α particle energy spectrum response of the Cd0.9Mn0.1Te: V single crystal

Analyses of crystal growth, optical, electrical, thermal and mechanical properties of an excellent detector-grade Cd0.9Mn0.1Te: V crystal

Study of Optical and Magneto-Optical Anisotropy of the Cd1−xMnxTe Crystal

Improvement of the Thz Response of Zn1-Xmnxte Bulk Crystals Grown by A Temperature Gradient Solution Method

Optical Properties of Ii-Vi Diluted Magnetic Semiconductor Znte/Zn(1-X)Mn(X)Te Superlattices

Exciton Properties of Diluted CdTe/CdMnTe Quantum Wells

Study of Zn1−xQxTe(Q=Mn, V) Crystals Grown from Te-Rich Solution As Terahertz Emitters and Sensors

Structural and optical properties of Te doped CdS films

Study of Photoreflectance Spectroscopy in Semiconductor Cd1-xMnxTe/CdTe Superlattices with High Compositions

Advanced Cd1-xMnxTe:Fe2+ semiconductor crystals with linear sin-band redshift of absorption and emission spectra

Growth and characterization of large-size CdMgTe single crystals doped with different in amounts

Interstitial doping of Mn4+ ions: An effective method to optimize the optical properties of TeO2 single crystal

Growth of Single-Crystal Cd0.9Zn0.1Te Ingots Using Pressure Controlled Bridgman Method

Structural and magnetic properties of Mn3-xCdxTeO6 (x = 0, 1, 1.5 and 2)

Magnetic Semiconductors in Ternary Cd–Mn–Te Compounds

Versatile Vanadium Doping Induces High Thermoelectric Performance in GeTe via Band Alignment and Structural Modulation

Structure and Optical Properties of Te-doped CdTe Thin Films

High Curie Temperature Bi(1.85)Mn(0.15)Te3 Nanoplates.

Electronic Structure and Magnetism of Ge(Sn)TMXTe1−X (TM = V, Cr, Mn): A First Principles Study

Advanced Cd1-xMnxTe:Fe2+ semiconductor crystals for IR applications: The role of the composition and sin-band redshift spectra effect