High-Power Single-Chip Gan-Based White Led with 3058 Lm

Mingdi Ding,Yibin Zhang,Jianwei Xu,Desheng Zhao,Hongjuan Huang,Xin Xu,Zhenlin Miao,Peng He,Yanming Wang,Yongjun Dong,Baoshun Zhang,Yong Cai
DOI: https://doi.org/10.1049/el.2016.2789
2016-01-01
Electronics Letters
Abstract:A high-power phosphor-converted white LED with 3058 lm is reported. The high-power white LED was manufactured by utilising a single-blue LED chip with a cerium-doped yttrium aluminium garnet phosphor crystal film, and the LED chip consists of 16 LED cells that are connected in series, the chip dimensions are of 4.5 x 4.5 mm(2). The electrical and optical characteristics of the LED were measured up to a 500 mA injection current under direct operation conditions. Results show that the luminous flux and luminous efficacy at 500 mA reach to 3058 lm and 128 lm/W, respectively.
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