Abstract:Based on 22 nm ultrathin-body fully depleted silicon-on-insulator (UTB-FDSOI) transistors, we propose a novel structure of buried insulator layer aiming at total ionizing dose (TID) effects mitigation. Using technology computer-aided design (TCAD) tools, we focus on the influences of UTB-FDSOI devices with different structures and parameters on TID effects, such as buried oxide (BOX) layer thickness, buried Si3N4 layer, and electron traps. First, we construct four types of UTB-FDSOI N-type metal-oxide semiconductor (NMOS) devices numerically, in which the novel device features a buried silicon-oxidenitride-oxide-silicon (SONOS) structure. Then, the transfer characteristics and trapped charge distribution of these devices are studied under different irradiation doses. It is known that a thinner BOX layer could lead to slighter TID effects, and the buried nitride layer and the electron traps could reduce the TID-induced leakage current (Ioff). Employing these optimization structures for TID effects hardness, the innovative transistor shows much better resistance against TID effects compared to the conventional FDSOI transistors. In addition, the threshold voltage of the novel device could be increased by applying appropriate bias conditions, similar to those of programming SONOS memory, so that the Ioff caused by TID irradiation further decreases. These results provide useful guidance for designers to achieve TID effects mitigation of SOI devices.

New Method of Total Ionizing Dose Compact Modeling in Partially Depleted Silicon-on-Insulator MOSFETs

A Stabilized Numerical Scheme to Simulate Synergistic Effect of TID and TDR in Semiconductor Devices

A Short-Channel SOI MOSFET Model Considering Total Dose Effects

Modeling of 0.18 μm NMOSFETs for TID effect

Modeling of Total Ionizing Dose Effect in Submicron MOS Transistor

A two-dimensional electrostatic potential model for total dose ionization effects in FOI FinFETs

Compact SPICE Modeling of Total Ionizing Dose for Shield Gate Trench MOSFET

Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 Nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor.

Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies

Threshold Voltage Model of Total Ionizing Irradiated Short-Channel FD-SOI MOSFETs with Gaussian Doping Profile

Modeling Of 0.18 Mu M Nmosfets For Tid Effect

Investigation of Unique Total Ionizing Dose Effects in 0.2 um Partially-Depleted Silicon-on-Insulator Technology

Physical Model for Ionizing Radiation Damage in Partially Depleted SOI Transistors

Dynamic modeling of total ionizing dose-induced threshold voltage shifts in MOS devices

An Analytical Subthreshold Swing Model for Fully-Depleted MOSFETs with Vertical Gaussian Profile Fabricated on Modified Silicon-on-insulator Wafers

TCAD Simulation of Total Ionizing Dose Response on DSOI Nmosfet

The impact of total ionizing dose on RF performance of 130 nm PD SOI I/O nMOSFETs

An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-Nm PDSOI I/O Nmosfets

A New Threshold Voltage Shift Model Due to Radiation in Fully-Depleted SOI MOSFET

Three-Dimensional Simulation of Total Dose Effects on Ultra-Deep Submicron Devices

A Model for Radiation-Induced Off-State Leakage Current in N-channel Metal-Oxide-semiconductor Transistors with Shallow Trench Isolation