Efficient Perovskite Light-Emitting Diodes by Film Annealing Temperature Control

Junqing Liang,Yongqiang Zhang,Xiaoyang Guo,Zhihong Gan,Jie Lin,Yi Fan,Xingyuan Liu

DOI: https://doi.org/10.1039/c6ra14393h

IF: 4.036

2016-01-01

RSC Advances

Abstract:A bright perovskite light-emitting diode has been fabricated through film annealing temperature control.

What problem does this paper attempt to address?

Kinetic Control of Perovskite Thin-Film Morphology and Application in Printable Light-Emitting Diodes

Prashant Kumar,Baodan Zhao,Richard H. Friend,Aditya Sadhanala,K. S. Narayan

DOI: https://doi.org/10.1021/acsenergylett.6b00554

IF: 22

2016-01-01

ACS Energy Letters

Abstract:Highly luminescent methylammonium lead bromide (CH3NH3PbBr3) perovskite fibrous microstructure thin films have been fabricated using a perylene-3,4,9,10-tetracarboxylic dianhydride-containing antisolvent-mediated single-step fabrication method. Confocal microscopy of these thin films reveals homogeneous emission over the entire area, in contrast to the localized emission from the thin films fabricated by conventional methods. The antisolvent treatment produces pinhole-free, mazelike morphology with high photoluminescence yield. These films were incorporated as the emissive layer in thin-film light emitting diodes (LEDs), made using a low-temperature meltable and processable alloy as cathode. These LEDs gave luminescence efficiency of up to 50 Cd/m(2). The proposed LED structure highlights the prospects of using low temperature roll-to-roll processing for manufacturing perovskite-based solar cells and LEDs.
Growth of Nano-Sized Single Crystals for Efficient Perovskite Light-Emitting Diodes.

Seungjin Lee,Jong Hyun Park,Yun Seok Nam,Bo Ram Lee,Baodan Zhao,Daniele Di Nuzzo,Eui Dae Jung,Hansol Jeon,Ju-Young Kim,Hu Young Jeong,Richard H Friend,Myoung Hoon Song

DOI: https://doi.org/10.1021/acsnano.7b09148

IF: 17.1

2018-01-01

ACS Nano

Abstract:Organic-inorganic hybrid perovskites are emerging as promising emitting materials due to their narrow full-width at half-maximum emissions, color tunability, and high photoluminescence quantum yields (PLQYs). However, the thermal generation of free charges at room temperature results in a low radiative recombination rate and an excitation intensity-dependent PLQY, which is associated with the trap density. Here, we report perovskite films composed of uniform nano-sized single crystals (average diameter = 31.7 nm) produced by introducing bulky amine ligands and performing the growth at a lower temperature. By effectively controlling the crystal growth, we maximized the radiative bimolecular recombination yield by reducing the trap density and spatially confining the charges. Finally, highly bright and efficient green emissive perovskite light-emitting diodes that do not suffer from electroluminescence blinking were achieved with a luminance of up to 55,400 cd m-2, current efficiency of 55.2 cd A-1, and an external quantum efficiency of 12.1%.
Efficient Light-Emitting Diodes Based on Nanocrystalline Perovskite in A Dielectric Polymer Matrix

Guangru Li,Zhi-Kuang Tan,Dawei Di,May Ling Lai,Lang Jiang,Jonathan Hua-Wei Lim,Richard H. Friend,Neil C. Greenham

DOI: https://doi.org/10.1021/acs.nanolett.5b00235

IF: 10.8

2015-01-01

Nano Letters

Abstract:Electroluminescence in light-emitting devices relies on the encounter and radiative recombination of electrons and holes in the emissive layer. In organometal halide perovskite light-emitting diodes, poor film formation creates electrical shunting paths, where injected charge carriers bypass the perovskite emitter, leading to a loss in electroluminescence yield. Here, we report a solution-processing method to block electrical shunts and thereby enhance electroluminescence quantum efficiency in perovskite devices. In this method, a blend of perovskite and a polyimide precursor dielectric (PIP) is solution-deposited to form perovskite nanocrystals in a thin-film matrix of PIP. The PIP forms a pinhole-free charge-blocking layer, while still allowing the embedded perovskite crystals to form electrical contact with the electron and hole-injection layers. This modified structure reduces nonradiative current losses and improves quantum efficiency by 2 orders of magnitude, giving an external quantum efficiency of 1.2%. This simple technique provides an alternative route to circumvent film formation problems in perovskite optoelectronics and offers the possibility of flexible and high-performance light-emitting displays.
Additive and Interfacial Control for Efficient Perovskite Light-Emitting Diodes with Reduced Trap Densities

Shun Tian,Chen Zou,Runchen Lai,Chungen Hsu,Xuhui Cao,Shiyu Xing,Baodan Zhao,Dawei Di

DOI: https://doi.org/10.1088/1674-4926/43/5/050502

2022-01-01

Journal of Semiconductors

Abstract:Metal halide perovskite semiconductors show excellent op-toelectronic properties including tunable bandgaps[1,2],nar-row emission bandwidths[3]and high luminescence quantum efficiencies[4],making them an ideal candidate for light-emit-ting diode(LED)applications.Perovskite LEDs(PeLEDs)have attracted considerable attention since the initial report of room-temperature electroluminescence(EL)from halide per-ovskites in 2014[5].In recent years,great efforts have been made to raise the EQEs of PeLEDs to 20％and beyond[6-13].Emissive layer compositional engineering and device architec-ture design were key strategies for improving the perform-ance of PeLEDs[6-13].
Thermal Radiation Annealing for Overcoming Processing Temperature Limitation of Flexible Perovskite Solar Cells

Jieqiong Liu,Zinan Zhao,Jin Qian,Zihui Liang,Congcong Wu,Kai Wang,Shengzhong (Frank) Liu,Dong Yang

DOI: https://doi.org/10.1002/adma.202401236

IF: 29.4

2024-01-01

Advanced Materials

Abstract:Common polymeric conductive electrodes, such as polyethylene terephthalate (PET) coated with indium tin oxide, face a major challenge due to their low processing-temperature limits, attributed to PET's low glass transition temperature (Tg) of (70-80 degrees C). This limitation significantly narrows the scope of material selection, limits the processing techniques applicable to the low Tg, and hinders the ripened technology transfer from glass substrates to them. Addressing the temperature constraints of the flexible substrates is impactful yet underexplored, with broader implications for fields beyond photovoltaics. Here, a new thermal radiation annealing methodology is introduced to address this issue. By applying the above Tg radiation annealing in conjunction with thermoelectric cooling, highly ordered molecular packing on PET substrates is successfully created, which is exclusively unachievable due to PET's low thermal tolerance. As a result, in the context of perovskite solar cells, this approach enables the circumvention of high-temperature annealing limitations of PET substrates, leading to a remarkable flexible device efficiency of 22.61% and a record fill factor of 83.42%. This approach proves especially advantageous for advancing the field of flexible optoelectronic devices. The high-thermal tolerance flexible perovskite solar cells with excellent mechanical stability are successfully achieved by a new thermal radiation annealing methodology, which aids in the vertical growth of perovskite grains, reduction of grain boundaries, and decrease of lattice mismatch. These microstructural improvements are essential in enhancing the performance of flexible perovskite photovoltaics. image
Efficient Flexible Inorganic Perovskite Light-Emitting Diodes Fabricated with CsPbBr3 Emitters Prepared Via Low-Temperature in Situ Dynamic Thermal Crystallization

Chen,Tae-Hee Han,Shaun Tan,Jingjing Xue,Yepin Zhao,Yunfei Liu,Haoran Wang,Wei Hu,Cong Bao,Marco Mazzeo,Rui Wang,Yu Duan,Yang

DOI: https://doi.org/10.1021/acs.nanolett.0c01550

IF: 10.8

2020-01-01

Nano Letters

Abstract:The present study systematically investigates the morphology and crystallization process of inorganic CsPbBr3 perovskite layer films fabricated by thermal coevaporation in conjunction with continuous low-temperature thermal annealing to promote in situ dynamic thermal crystallization. The results confirm for the first time that both the crystal grain size and the compactness of the CsPbBr3 films can be tuned during the thermal coevaporation fabrication process via in situ dynamic thermal crystallization. The performance of the PeLEDs employing the CsPbBr3 films as the emitter layer is investigated in detail with respect to the substrate temperature and deposition rate employed during deposition of the CsPbBr3 film. This study provides guidelines for developing suitable film production processes and highlights future challenges that must be addressed to facilitate the commercial development of large-area, uniform, and flexible perovskite-based optoelectronic devices.
Understanding the Formation and Evolution of Interdiffusion Grown Organolead Halide Perovskite Thin Films by Thermal Annealing

Cheng Bi,Yuchuan Shao,Yongbo Yuan,Zhengguo Xiao,Chenggong Wang,Yongli Gao,Jinsong Huang

DOI: https://doi.org/10.1039/c4ta04007d

IF: 11.9

2014-01-01

Journal of Materials Chemistry A

Abstract:Organolead trihalide perovskites are emerging excellent active materials for thin film solar cells. Here, the formation and evolution of methylammonium lead iodide perovskite thin films grown by the low-temperature thermal annealing induced interdiffusion process are investigated. It is found that thermal annealing not only drives the formation of perovskite but also affects the morphology, optoelectronic properties and correlated device performance. Thermal annealing at 105 degrees C quickly drives the formation of phase-pure perovskite in a short time of 15 min, and continued thermal annealing up to two hours continuously increases the perovskite crystallinity and grain size without losing film continuity or coverage. The measured Hall mobility increases monotonically to 36.0 cm(2) V-1 s(-1) upon annealing, which is correlated with the increased crystallinity and grain size. Device efficiencies increase with an increased short circuit current density and fill factor with a longer annealing time up to two hours, and the highest device efficiency of 13.4% is achieved. It is found that the reduction of work function in the perovskite films, caused by the increased annealing duration, is linearly correlated with the open circuit voltage loss, which points out a path for the further increase of the device efficiency.
High Annealing Temperature Induced Rapid Grain Coarsening for Efficient Perovskite Solar Cells.

Xiaobing Cao,Lili Zhi,Yi Jia,Yahui Li,Xian Cui,Ke Zhao,Lijie Ci,Kongxian Ding,Jinquan Wei

DOI: https://doi.org/10.1016/j.jcis.2018.04.019

IF: 9.9

2018-01-01

Journal of Colloid and Interface Science

Abstract:Thermal annealing plays multiple roles in fabricating high quality perovskite films. Generally, it might result in large perovskite grains by elevating annealing temperature, but might also lead to decomposition of perovskite. Here, we study the effects of annealing temperature on the coarsening of perovskite grains in a temperature range from 100 to 250 degrees C, and find that the coarsening rate of the perovskite grain increase significantly with the annealing temperature. Compared with the perovskite films annealed at 100 degrees C, high quality perovskite films with large columnar grains are obtained by annealing perovskite precursor films at 250 degrees C for only 10 s. As a result, the power conversion efficiency of best solar cell increased from 12.35% to 16.35% due to its low recombination rate and high efficient charge transportation in solar cells. (C) 2018 Elsevier Inc. All rights reserved.
Effects of Post-Annealing on the Property of CsPbBr3 Films and the Performance of Relevant Light-Emitting Diodes

Jianping Huang,Haitao Yao,Fangfang You,Yi Yao,Weiwei Li,Qing Zhang,Wenhua Zhang,Faqiang Xu

DOI: https://doi.org/10.1016/j.jlumin.2024.120771

IF: 3.6

2024-01-01

Journal of Luminescence

Abstract:All-inorganic metal halide perovskite materials have attracted considerable attention in display and lighting fields due to their excellent photoelectric properties. It has been found that post treatment, especially postannealing process generally plays crucial roles in promoting the crystal quality and properties of the perovskite films, as well as the performance of the relevant devices, but the promotion mechanism has not been reached thoroughly yet. Herein, we successfully synthesized the CsPbBr3 perovskite films through dual-source co-evaporation of CsBr and PbBr2 by applying the molecular beam epitaxy (MBE) technique in an ultrahigh vacuum system. The effects of post-annealing on the structure and optical property were systematically studied for the films, and the optimal post-annealing condition was determined to be 90 degrees C for 10 min. As the characterization results by SEM, XRD, PL, etc., shown, the optimizing effect is attributed to the size change and the quality enhancement of the CsPbBr3 microcrystals in the films with temperature. Using CsPbBr3 films as the emitting layers, the perovskite light-emitting diodes (PeLEDs) with the configuration of ITO/PVK/CsPbBr3/TPBi/ LiF/Al were constructed with the optimized emitting layer of 200 nm. The device shows pure green emission at a wavelength of 527 nm with a narrow full width at half-maximum of 19 nm. The post-annealing optimized device achieved an external quantum efficiency (EQE) of 1.6 % along with a maximum luminance of 39,700 cd/m2, which represents a significant improvement over the device consisting of unannealed CsPbBr3 film, with the EQE increased by 1.6 times and the luminance increased by 4.7 times.
Interfacial Control Toward Efficient and Low-Voltage Perovskite Light-Emitting Diodes

Jianpu Wang,Nana Wang,Yizheng Jin,Junjie Si,Zhi‐Kuang Tan,Hui Du,Lu Cheng,Xingliang Dai,Sai Bai,Haiping He,Zhizhen Ye,May Ling Lai,Richard H. Friend,Wei Huang,Zhi-Kuang Tan

DOI: https://doi.org/10.1002/adma.201405217

IF: 29.4

2015-02-23

Advanced Materials

Abstract:High-performance perovskite light-emitting diodes are achieved by an interfacial engineering approach, leading to the most efficient near-infrared devices produced using solution-processed emitters and efficient green devices at high brightness conditions.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
High Crystallization Of Perovskite Film By A Fast Electric Current Annealing Process

Wei Luo,Cuncun Wu,Weihai Sun,Xuan Guo,Lixin Xiao,Zhijian Chen

DOI: https://doi.org/10.1021/acsami.7b07775

IF: 9.5

2017-01-01

ACS Applied Materials & Interfaces

Abstract:High-efficiency organic inorganic hybrid perovskite solar cells have experienced rapid development and attracted significant attention in recent years. Crystal growth as an important factor would significantly influence the quality of perovskite films and ultimately the device performance, which usually requires thermal annealing for 10 min or more. Herein, we demonstrate a new method to get high crystallization of perovskite film by electric current annealing for just 5 s. In contrast to conventional thermal annealing, a homogeneous perovskite film was formed with larger grains and fewer pinholes, leading to a better performance of the device with higher open-circtlit voltage and fill factor. An average power conversion efficiency of 17.02% with electric current annealing was obtained, which is higher than that of devices with a conventional thermal annealing process (16.05%). This facile electric current annealing process with legs energy loss and time consumption shows great potential in the industrial mass production of photovoltaic devices.
Enhanced Performance of Perovskite Light-Emitting Devices with Improved Perovskite Crystallization

Yue-Feng Liu,Yi-Fan Zhang,Ming Xu,Zhen-Yu Zhang,Jifang Tao,Yuandong Gu,Jing Feng,Hong-Bo Sun

DOI: https://doi.org/10.1109/jphot.2016.2647204

IF: 2.4

2017-01-01

IEEE Photonics Journal

Abstract:In this paper, we have demonstrated an efficient perovskite light-emitting device (PeLED) by improving perovskite crystallization. The improved perovskite crystallization has been achieved by pretreating the underneath poly (3, 4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT: PSS) layer with N, N-dimethylformamide (DMF) solvent before single-step spin-coating the perovskite, which results in a prolonged wet environment during the perovskite thermal annealing process to promote the grain growth. The improved perovskite crystallization induces a perovskite thin film with higher surface coverage, fewer defects, and larger grain size with less scattering of grain boundaries. As a result, the PeLEDs exhibit maximum external quantum efficiency of 0.728% and maximum luminance of 2088 cd/m2, which represent a significant improvement over the control devices. Moreover, perovskite films with improved crystalline quality have proved its beneficial effect on the device stability.
In-situ growth of low-dimensional perovskite-based insular nanocrystals for highly efficient light emitting diodes

Hao Wang,Weidong Xu,Qi Wei,Si Peng,Yuequn Shang,Xianyuan Jiang,Danni Yu,Kai Wang,Ruihua Pu,Chenxi Zhao,Zihao Zang,Hansheng Li,Yile Zhang,Ting Pan,Zijian Peng,Xiaoqin Shen,Shengjie Ling,Weimin Liu,Feng Gao,Zhijun Ning

DOI: https://doi.org/10.1038/s41377-023-01112-7

2023-03-04

Light: Science and Applications

Abstract:Regulation of perovskite growth plays a critical role in the development of high-performance optoelectronic devices. However, judicious control of the grain growth for perovskite light emitting diodes is elusive due to its multiple requirements in terms of morphology, composition, and defect. Herein, we demonstrate a supramolecular dynamic coordination strategy to regulate perovskite crystallization. The combined use of crown ether and sodium trifluoroacetate can coordinate with A site and B site cations in ABX 3 perovskite, respectively. The formation of supramolecular structure retard perovskite nucleation, while the transformation of supramolecular intermediate structure enables the release of components for slow perovskite growth. This judicious control enables a segmented growth, inducing the growth of insular nanocrystal consist of low-dimensional structure. Light emitting diode based on this perovskite film eventually brings a peak external quantum efficiency up to 23.9%, ranking among the highest efficiency achieved. The homogeneous nano-island structure also enables high-efficiency large area (1 cm 2 ) device up to 21.6%, and a record high value of 13.6% for highly semi-transparent ones.

optics
Annealing‐Free, High‐Performance Perovskite Solar Cells by Controlling Crystallization Via Guanidinium Cation Doping

Hang Dong,Shangzheng Pang,Fengqin He,Haifeng Yang,Weidong Zhu,Dazheng Chen,He Xi,Jincheng Zhang,Yue Hao,Chunfu Zhang

DOI: https://doi.org/10.1002/solr.202100097

IF: 9.1726

2021-01-01

Solar RRL

Abstract:One of the urgent key points to realize the commercialization of perovskite solar cells (PSCs) with robust and excellent performance is the fabrication of high‐quality perovskite film. Nevertheless, a traditional thermal annealing (TA) technology is always necessary for a high crystallization perovskite film, and previous reports have suggested that TA could induce heterogeneous nucleation which is inconducive for the formation of smooth and uniform perovskite film, as well as time and cost consuming. Herein, an approach for the annealing‐free high‐quality perovskite film via the introduction of guanidinium iodine (GAI) is proposed. The organic molecule guanidinium (GA+) has a large ionic radius, and this could control the crystallizing rate of annealing‐free perovskite film. Ultimately, a perovskite film with larger grain size and lower defect density is acquired through doping 0.10 mol mL−1 GAI in the precursor solution. Moreover, the fabrication of the electron transfer layer and hole transfer layer is further realized at room temperature. Thus, all room temperature, annealing‐free high‐performance PSCs are demonstrated. Notably, a GAI‐doped device with an outstanding power conversion efficiency (PCE) of 19.25% is obtained, much higher than 16.78% of the pristine device.
Ionic-liquid Induced Enhanced Performance of Perovskite Light-Emitting Diodes

Jinqiao Cai,Muhammad Umair Ali,Ming Liu,Jiajun Zhao,Jingsheng Miao,Yonghong Deng,Shihe Yang,Chaoyi Yan,Guichuan Xing,Yaowu He,Hong Meng

DOI: https://doi.org/10.1088/1361-6463/ab913a

2020-01-01

Abstract:Organic-inorganic hybrid perovskites (OIHP) have attracted a great deal of attention as promising light-emitting materials, because of their low-cost production via simple solution processing, high color purity, and easily tunable bandgaps. Nevertheless, the fabrication of OIHP films for light-emitting diodes generally requires complicated post-treatments, such as an anti-solvent dripping process, owing to the poor film forming property of the perovskite precursor solution. In this work, we employed an ionic liquid, methylammonium acetate (MAAc), as an additive to optimize the growth of FAPbBr(3)perovskite films via an anti-solvent-free approach. The influence of MAAc on the crystallization kinetics of FAPbBr(3)phase and optoelectronic properties of the resulting perovskite films have been systematically investigated. Our results demonstrate that MAAc is an effective modifier for creating perovskite films with reduced grain size, homogeneous grain distribution, and smooth surface, leading to an enhanced average lifetime of the excitons. Perovskite light-emitting diodes (PeLEDs) containing FAPbBr(3)films obtained via incorporating 10 vol% MAAc as an additive exhibited considerably suppressed leakage current, and a significant enhancement in current efficiency (CE) from 0.027 to 4.85 cd A(-1). These findings reveal that the incorporation of a suitable additive could play a beneficial role in the formation of well-optimized perovskite films, which would ultimately lead to the realization of PeLEDs with improved performance.
Inverted Thermal Annealing of Perovskite Films: A Method for Enhancing Photovoltaic Device Efficiency

Guohua Dong,Yulin Yang,Li Sheng,Debin Xia,Ting Su,Ruiqing Fan,Yan Shi,Junhai Wang

DOI: https://doi.org/10.1039/c6ra07497a

IF: 4.036

2016-01-01

RSC Advances

Abstract:A novel method called inverted thermal annealing was adopted to treat perovskite films for efficient PSCs.
Efficient Perovskite Light-Emitting Diodes Featuring Nanometre-Sized Crystallites

Zhengguo Xiao,Ross A. Kerner,Lianfeng Zhao,Nhu L. Tran,Kyung Min Lee,Tae-Wook Koh,Gregory D. Scholes,Barry P. Rand

DOI: https://doi.org/10.1038/nphoton.2016.269

IF: 35

2017-01-01

Nature Photonics

Abstract:Organic–inorganic hybrid perovskite materials are emerging as highly attractive semiconductors for use in optoelectronics. In addition to their use in photovoltaics, perovskites are promising for realizing light-emitting diodes (LEDs) due to their high colour purity, low non-radiative recombination rates and tunable bandgap. Here, we report highly efficient perovskite LEDs enabled through the formation of self-assembled, nanometre-sized crystallites. Large-group ammonium halides added to the perovskite precursor solution act as a surfactant that dramatically constrains the growth of 3D perovskite grains during film forming, producing crystallites with dimensions as small as 10 nm and film roughness of less than 1 nm. Coating these nanometre-sized perovskite grains with longer-chain organic cations yields highly efficient emitters, resulting in LEDs that operate with external quantum efficiencies of 10.4% for the methylammonium lead iodide system and 9.3% for the methylammonium lead bromide system, with significantly improved shelf and operational stability.
(Invited) Improvement of Perovskite Films and the Perovskite/TiO2Interface

Peng Zhang,Yafei Wang,Detao Liu,Shibin Li,Zhi David Chen

DOI: https://doi.org/10.1149/08010.0675ecst

2017-01-01

Abstract:Perovskite solar cells (PSCs) based on organometallic halide have received wide attention and been developed rapidly in recent years. However, the grain boundaries in perovskite film and defects in the interface in perovskite films dramatically degrade PSCs performance. Solvent annealing is an efficient method to fabricate high quality perovskite film with less grain boundaries. While most works carried out focused on the solvent annealing of perovskite films, we annealed PbI2 films in DMF, DMSO, acetone, and isopropanol (IPA) atmospheres and studied the effect of different atmospheres. We found that dense PbI2 was formed by annealing in DMF, acetone, and IPA atmospheres, which impeded the full reaction between PbI2 and CH3NH3I. Meanwhile, DMSO solvent annealing process led to porous PbI2 films, which facilitated the complete conversion of PbI2 to perovskite with larger grain sizes. As a result, Solar cells based on DMSO solvent annealing process exhibited the best efficiency of 18.5%, with a fill factor of 76.5%. We also annealed PbI2 in DMSO and CH3NH3PbI3 in ethanol for fabrication of pinhole-free CH3NH3PbI3 films on ZnO nanorods. Due to the suppression of carrier recombination by large grains, ZnO nanorods based PSCs with best efficiency of 17.3% was obtained. To suppress the interface defect, Li-doping compact TiO2 was also used as electron transport layer (ETL). Li doping reduced electron trap density and increased the conductivity of the ETL. As a result, the Li-doped compact TiO2 based planar heterojunction PSCs exhibit negligible hysteretic J-V behavior. Comparing with the undoped compact TiO2 based PSCs, the PCE of the Li-doped compact TiO2 film based PSCs is improved from 14.2% to 17.1%. Figure 1
Reducing Nonradiative Losses of Air‐Processed Perovskite Films via Interface Modification for Bright and Efficient Light Emitting Diodes

Wan Li,Tianxiang Li,Yu Tong,Yaochen Li,Hao Wang,Heng Qi,Kun Wang,Hongqiang Wang

DOI: https://doi.org/10.1002/adfm.202311133

IF: 19

2023-11-01

Advanced Functional Materials

Abstract:Interface modification is carried out to optimize the contact between the self‐assembled‐monolayer and the perovskite emitting layer, which are all processed in ambient air. The nonradiative losses are effectively reduced, and the resultant perovskite LEDs achieve a record luminance of 22 121 cd m−2 with a high external quantum efficiency of 12.06%. Developing ambient‐air fabrication strategy is desirable for lowering down the fabrication cost of perovskite light emitting diodes (LEDs) and further promoting their broad applications. However, ambient humidity usually leads to undesirable interface and perovskite film quality, causing severe nonradiative losses and unsatisfactory device performance. In this work, an effective strategy to solve this problem and remarkably enhance the performance of perovskite LEDs is reported. The study reveals that the humidity‐induced aggregation of self‐assembled monolayer (SAM) in humid air can be eliminated by introducing a poly[(9,9‐bis(3′‐((N,N‐dimethyl)‐N‐ethylammonium)‐ propyl)‐2,7‐fluorene)‐alt‐2,7‐(9,9‐dioctylfluorene)] dibromide (PFNBr) as an interface modifier, which reduces the interfacial defects and improves the perovskite crystallinity. The interaction between PFNBr and perovskite can further passivate the defects and suppress trap‐assisted nonradiative processes, which significantly enhances the photoluminescence efficiency of the ambient‐processed perovskite films. Furthermore, the energy level alignment is optimized and the hole injection is improved, thus resulting in more efficient and balanced charge injection. As a result, the green perovskite LEDs achieve a high external quantum efficiency of 12.06% and luminance of 22121 cd m−2, representing the record values for the perovskite LEDs processed under such ambient‐air condition, in accompany with an improved device stability.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Engineering Perovskite Nanocrystal Surface Termination for Light‐Emitting Diodes with External Quantum Efficiency Exceeding 15%

Zhengguo Xiao,Ross A. Kerner,Nhu Tran,Lianfeng Zhao,Gregory D. Scholes,Barry P. Rand

DOI: https://doi.org/10.1002/adfm.201807284

IF: 19

2019-01-28

Advanced Functional Materials

Abstract:Abstract Hybrid organic–inorganic metal halide perovskites are particularly promising for light‐emitting diodes (LEDs) due to their attractive optoelectronic properties such as wavelength tunability, narrow emission linewidth, defect tolerance, and high charge carrier mobility. However, the undercoordinated Pb and halide at the perovskite nanocrystal (NC) surface causes traps and nonradiative recombination. In this work, the external quantum efficiency of iodide‐based perovskite LEDs is boosted to greater than 15%, with an emission wavelength at 750 nm, by engineering the perovskite NC surface stoichiometry and chemical structure of bulky organoammonium ligands. To the stoichiometric precursor solution for the 3D bulk perovskite, 20% molar ratio of methylammonium iodide is added in addition to 20% excess bulky organoammonium iodide to ensure that the NC surface is organoammonium terminated as the crystal size is decreased to 5–10 nm. This combination ensures minimal undercoordinated Pb and halide on the surface, avoids 2D phases, and acts to provide nanosized perovskite grains which allow for smooth and pinhole‐free films. As a result of time‐resolved photoluminescence (PL) and PL quantum yield measurements, it is possible to demonstrate that this surface modification increases the radiative recombination rate while reducing the nonradiative rate.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology

Efficient Perovskite Light-Emitting Diodes by Film Annealing Temperature Control

Kinetic Control of Perovskite Thin-Film Morphology and Application in Printable Light-Emitting Diodes

Growth of Nano-Sized Single Crystals for Efficient Perovskite Light-Emitting Diodes.

Efficient Light-Emitting Diodes Based on Nanocrystalline Perovskite in A Dielectric Polymer Matrix

Additive and Interfacial Control for Efficient Perovskite Light-Emitting Diodes with Reduced Trap Densities

Thermal Radiation Annealing for Overcoming Processing Temperature Limitation of Flexible Perovskite Solar Cells

Efficient Flexible Inorganic Perovskite Light-Emitting Diodes Fabricated with CsPbBr3 Emitters Prepared Via Low-Temperature in Situ Dynamic Thermal Crystallization

Understanding the Formation and Evolution of Interdiffusion Grown Organolead Halide Perovskite Thin Films by Thermal Annealing

High Annealing Temperature Induced Rapid Grain Coarsening for Efficient Perovskite Solar Cells.

Effects of Post-Annealing on the Property of CsPbBr3 Films and the Performance of Relevant Light-Emitting Diodes

Interfacial Control Toward Efficient and Low-Voltage Perovskite Light-Emitting Diodes

High Crystallization Of Perovskite Film By A Fast Electric Current Annealing Process

Enhanced Performance of Perovskite Light-Emitting Devices with Improved Perovskite Crystallization

In-situ growth of low-dimensional perovskite-based insular nanocrystals for highly efficient light emitting diodes

Annealing‐Free, High‐Performance Perovskite Solar Cells by Controlling Crystallization Via Guanidinium Cation Doping

Ionic-liquid Induced Enhanced Performance of Perovskite Light-Emitting Diodes

Inverted Thermal Annealing of Perovskite Films: A Method for Enhancing Photovoltaic Device Efficiency

Efficient Perovskite Light-Emitting Diodes Featuring Nanometre-Sized Crystallites

(Invited) Improvement of Perovskite Films and the Perovskite/TiO2Interface

Reducing Nonradiative Losses of Air‐Processed Perovskite Films via Interface Modification for Bright and Efficient Light Emitting Diodes

Engineering Perovskite Nanocrystal Surface Termination for Light‐Emitting Diodes with External Quantum Efficiency Exceeding 15%