Additive and Interfacial Control for Efficient Perovskite Light-Emitting Diodes with Reduced Trap Densities

Shun Tian,Chen Zou,Runchen Lai,Chungen Hsu,Xuhui Cao,Shiyu Xing,Baodan Zhao,Dawei Di
DOI: https://doi.org/10.1088/1674-4926/43/5/050502
2022-01-01
Journal of Semiconductors
Abstract:Metal halide perovskite semiconductors show excellent op-toelectronic properties including tunable bandgaps[1,2],nar-row emission bandwidths[3]and high luminescence quantum efficiencies[4],making them an ideal candidate for light-emit-ting diode(LED)applications.Perovskite LEDs(PeLEDs)have attracted considerable attention since the initial report of room-temperature electroluminescence(EL)from halide per-ovskites in 2014[5].In recent years,great efforts have been made to raise the EQEs of PeLEDs to 20%and beyond[6-13].Emissive layer compositional engineering and device architec-ture design were key strategies for improving the perform-ance of PeLEDs[6-13].
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